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1.发明授权公开(公告)号：US10985059B2
公开(公告)日：2021-04-20
申请号：US16178306
申请日：2018-11-01
IPC分类号： H01L21/768 , H01L21/02 , H01L23/532 , H01L39/24
摘要： A method is provided of forming a superconductor device interconnect structure. The method comprises forming a first dielectric layer overlying a substrate and forming a superconducting interconnect element in the first dielectric layer. The superconducting interconnect element includes a top surface aligned with a top surface of the first dielectric layer to form a first interconnect layer. The superconductor device interconnect structure is moved into a dielectric deposition chamber. The method further comprises performing a cleaning process on a top surface of the first interconnect layer in the dielectric deposition chamber to remove oxidization from a top surface of the first interconnect layer, and depositing a second dielectric layer over the first interconnect layer in the dielectric deposition chamber.
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公开(公告)号：US09780285B1
公开(公告)日：2017-10-03
申请号：US15238375
申请日：2016-08-16
CPC分类号： H01L39/223 , H01L39/025 , H01L39/2493
摘要： A method is provided of forming a superconductor device interconnect structure. The method includes forming a first dielectric layer overlying a substrate, and forming a base electrode in the first dielectric layer with the base electrode having a top surface aligned with the top surface of the first dielectric layer. The method further comprises forming a Josephson junction (JJ) over the base electrode, depositing a second dielectric layer over the JJ, the base electrode and the first dielectric layer, and forming a first contact through the second dielectric layer to the base electrode to electrically couple the first contact to a first end of the JJ, and a second contact through the second dielectric layer to a second end of the JJ.
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3.发明授权公开(公告)号：US11522118B2
公开(公告)日：2022-12-06
申请号：US16738790
申请日：2020-01-09
申请人： Christopher F. Kirby , Michael Rennie , Daniel J. O'Donnell , Aurelius L. Graninger , Aaron A. Pesetski
发明人： Christopher F. Kirby , Michael Rennie , Daniel J. O'Donnell , Aurelius L. Graninger , Aaron A. Pesetski
IPC分类号： H01L21/00 , H01L39/24 , H01L23/522 , H01L23/532
摘要： A method of forming a superconductor structure is disclosed. The method comprises forming a superconductor line in a first dielectric layer, forming a resistor with an end coupled to an end of the superconductor line, and forming a second dielectric layer overlying the resistor. The method further comprises etching a tapered opening through the second dielectric layer to the resistor, and performing a contact material fill with a normal metal material to fill the tapered opening and form a normal metal connector coupled to the resistor.
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公开(公告)号：US10763419B2
公开(公告)日：2020-09-01
申请号：US15612326
申请日：2017-06-02
IPC分类号： H01L39/24 , H01L21/02 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/285
摘要： A method of forming a superconductor interconnect structure is disclosed. The method includes forming a dielectric layer overlying a substrate, forming an interconnect opening in the dielectric layer, and moving the substrate to a deposition chamber. The method further includes depositing a superconducting metal in the interconnect opening, by performing a series of superconducting deposition and cooling processes to maintain a chamber temperature at or below a predetermined temperature until the superconducting metal has a desired thickness, to form a superconducting element in the superconductor interconnect structure.
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公开(公告)号：US10608159B2
公开(公告)日：2020-03-31
申请号：US15351755
申请日：2016-11-15
摘要： A method of forming a superconductor device structure is disclosed. The method comprises forming a base electrode in a first dielectric layer, forming a junction material stack over the base electrode, forming a hardmask over the junction material stack, etching away a portion of the junction material stack to form a Josephson junction (JJ) over the base electrode, and depositing a second dielectric layer over the hardmask, the JJ, the base electrode and the first dielectric layer. The method additionally comprises forming a first contact through the second dielectric layer to the base electrode to electrically couple the first contact to a first end of the JJ, and forming a second contact through the second dielectric layer and the hardmask to electrically coupled the second contact to a second end of the JJ.
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公开(公告)号：US10312141B2
公开(公告)日：2019-06-04
申请号：US15238394
申请日：2016-08-16
IPC分类号： H01L21/768 , H01L23/532 , H01L21/02
摘要： A method is provided of forming a superconductor device interconnect structure. The method includes forming a first dielectric layer overlying a substrate, and forming a superconducting interconnect element in a first dielectric layer, such that the superconducting interconnect element has a top surface aligned with a top surface of the first dielectric layer to form a first interconnect layer. The method also includes performing a plasma clean on a top surface of the first interconnect layer, and depositing a second dielectric layer over the first dielectric layer.
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公开(公告)号：US10276504B2
公开(公告)日：2019-04-30
申请号：US15597565
申请日：2017-05-17
申请人： Vivien Luu , Christopher F. Kirby , Brian Wagner , Michael Rennie
发明人： Vivien Luu , Christopher F. Kirby , Brian Wagner , Michael Rennie
IPC分类号： H01L23/532 , H01L21/00 , H01L23/522 , H01L21/768 , H01L21/02 , H01L39/24
摘要： A method is provided of forming a superconductor interconnect structure. The method comprises forming a dielectric layer overlying a substrate, forming an interconnect opening in the dielectric layer, and moving the substrate to a deposition chamber. The method further comprises performing a cleaning process on the top surface of the dielectric layer and in the interconnect opening while in the deposition chamber, and depositing a superconducting metal in the interconnect opening while in the deposition chamber to form a superconducting element in the superconductor interconnect structure.
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公开(公告)号：US10312142B2
公开(公告)日：2019-06-04
申请号：US15362400
申请日：2016-11-28
IPC分类号： H01L21/00 , H01L21/768 , H01L21/02 , H01L21/027 , H01L21/311 , H01L21/321 , H01L23/522 , H01L23/528 , H01L23/532 , H01L23/66 , H01L39/12 , H01L39/24 , H01P3/08 , H01P11/00
摘要： A method of forming a superconductor structure is provided. The method comprises forming a superconducting element in a first dielectric layer that has a top surface aligned with the top surface of the first dielectric layer, forming a second dielectric layer over the first dielectric layer and the superconducting element, and forming an opening in the second dielectric layer to a top surface of the superconducting element. The method also comprises performing a cleaning process on the top surface of the superconducting element to remove oxides formed on the top surface of the superconducting element at a first processing stage, forming a protective barrier over the top surface of the superconducting element, and moving the superconductor structure to a second processing stage for further processing.
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公开(公告)号：US10003005B2
公开(公告)日：2018-06-19
申请号：US15244827
申请日：2016-08-23
CPC分类号： H01L39/2493 , H01L39/025 , H01L39/223
摘要： A method is provided of forming a superconductor device interconnect structure. The method includes forming a first high temperature dielectric layer overlying a substrate, forming a base electrode in the first high temperature dielectric layer with the base electrode having a top surface aligned with the top surface of the first high temperature dielectric layer, and depositing a second high temperature dielectric layer over the first high temperature dielectric layer and the base electrode. The method further comprises forming a first contact through the second dielectric layer to a first end of the base electrode, forming a Josephson junction (JJ) overlying and in contact with the first contact, and forming a second contact through the second dielectric layer to a second end of the base electrode.
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公开(公告)号：US20180151430A1
公开(公告)日：2018-05-31
申请号：US15362400
申请日：2016-11-28
IPC分类号： H01L21/768 , H01L39/24 , H01L39/12 , H01L21/02 , H01L21/027 , H01L21/311 , H01L21/321 , H01L23/528 , H01L23/522 , H01L23/532 , H01P3/08 , H01P11/00 , H01L23/66
CPC分类号： H01L21/76891 , H01L21/02063 , H01L21/02074 , H01L21/0273 , H01L21/31116 , H01L21/3212 , H01L21/76802 , H01L21/76814 , H01L21/7684 , H01L21/76849 , H01L21/7685 , H01L21/76877 , H01L21/76883 , H01L23/5226 , H01L23/528 , H01L23/53285 , H01L23/66 , H01L39/12 , H01L39/2406 , H01L2223/6627 , H01P3/081 , H01P11/003
摘要： A method of forming a superconductor structure is provided. The method comprises forming a superconducting element in a first dielectric layer that has a top surface aligned with the top surface of the first dielectric layer, forming a second dielectric layer over the first dielectric layer and the superconducting element, and forming an opening in the second dielectric layer to a top surface of the superconducting element. The method also comprises performing a cleaning process on the top surface of the superconducting element to remove oxides formed on the top surface of the superconducting element at a first processing stage, forming a protective barrier over the top surface of the superconducting element, and moving the superconductor structure to a second processing stage for further processing.
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