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公开(公告)号：US07803694B2
公开(公告)日：2010-09-28
申请号：US12170583
申请日：2008-07-10
CPC分类号： H01L29/1054 , H01L21/76254 , H01L21/76259 , Y10S438/938
摘要： Semiconductor wafers having a thin layer of strained semiconductor material. These structures include a substrate; an oxide layer upon the substrate; a silicon carbide (SiC) layer upon the oxide layer, and a strained layer of a semiconductor material in a strained state upon the silicon carbide layer, or a matching layer upon the donor substrate that is made from a material that induces strain in subsequent epitaxially grown layers thereon; a strained layer of a semiconductor material of defined thickness in a strained state; and an insulating or semi-insulating layer upon the strained layer in a thickness that retains the strained state of the strained layer. The insulating or semi-insulating layers are made of silicon carbide or oxides and act to retain strain in the strained layer.
摘要翻译： 半导体晶片具有应变半导体材料的薄层。 这些结构包括底物; 基底上的氧化物层; 氧化物层上的碳化硅（SiC）层，以及在碳化硅层上处于应变状态的半导体材料的应变层，或者由施主衬底上的由随后的外延生长引起应变的材料制成的匹配层 生长层; 在应变状态下具有规定厚度的半导体材料的应变层; 以及在应变层上的绝缘或半绝缘层，其厚度保持应变层的应变状态。 绝缘层或半绝缘层由碳化硅或氧化物制成并用于将应变保留在应变层中。
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公开(公告)号：US08049224B2
公开(公告)日：2011-11-01
申请号：US12862471
申请日：2010-08-24
IPC分类号： H01L29/12
CPC分类号： H01L29/1054 , H01L21/76254 , H01L21/76259 , Y10S438/938
摘要： Semiconductor wafers having a thin layer of strained semiconductor material. These structures include a substrate; an oxide layer upon the substrate; a silicon carbide (SiC) layer upon the oxide layer, and a strained layer of a semiconductor material in a strained state upon the silicon carbide layer, or a matching layer upon the donor substrate that is made from a material that induces strain in subsequent epitaxially grown layers thereon; a strained layer of a semiconductor material of defined thickness in a strained state; and an insulating or semi-insulating layer upon the strained layer in a thickness that retains the strained state of the strained layer. The insulating or semi-insulating layers are made of silicon carbide or oxides and act to retain strain in the strained layer.
摘要翻译： 半导体晶片具有应变半导体材料的薄层。 这些结构包括底物; 基底上的氧化物层; 氧化物层上的碳化硅（SiC）层，以及在碳化硅层上处于应变状态的半导体材料的应变层，或者由施主衬底上的由随后的外延生长引起应变的材料制成的匹配层 生长层; 在应变状态下具有规定厚度的半导体材料的应变层; 以及在应变层上的绝缘或半绝缘层，其厚度保持应变层的应变状态。 绝缘层或半绝缘层由碳化硅或氧化物制成并用于将应变保留在应变层中。
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公开(公告)号：US20080164492A1
公开(公告)日：2008-07-10
申请号：US12040134
申请日：2008-02-29
CPC分类号： H01L29/1054 , H01L21/76254 , H01L21/76259 , Y10S438/938
摘要： A process for preparing a semiconductor wafer with a strained layer having an elevated critical thickness. A first wafer having a strained layer of a semiconductor material on a matching layer is provided, with the semiconductor material having a first lattice parameter corresponding to a relaxed state and a first critical thickness corresponding to the first strained state, and the first thickness is less than the first critical thickness, The matching layer has a matching lattice parameter that is sufficiently different than the first lattice parameter to retain the strained layer in the strained state, The strained layer is transferred to a receiving substrate selected to provide the transferred strained layer with a second critical thickness that is greater than the first critical thickness, and additional semiconductor material is grown on the transferred strained layer to provide a second thickness that is greater than the first critical thickness and less than the second critical thickness, The invention also relates to the semiconductor structures that can be produced by the process.
摘要翻译： 一种制备具有临界厚度升高的应变层的半导体晶片的方法。 提供了在匹配层上具有半导体材料应变层的第一晶片，半导体材料具有对应于松弛状态的第一晶格参数和对应于第一应变状态的第一临界厚度，并且第一厚度较小 匹配层具有与第一晶格参数充分不同的匹配晶格参数，以将应变层保持在应变状态。应变层被转移到选择的接收衬底以提供转移的应变层， 第二临界厚度大于第一临界厚度，并且附加的半导体材料在转移的应变层上生长以提供大于第一临界厚度并小于第二临界厚度的第二厚度。本发明还涉及 可以通过该方法生产的半导体结构 。
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公开(公告)号：US07534701B2
公开(公告)日：2009-05-19
申请号：US12040134
申请日：2008-02-29
IPC分类号： H01L21/30
CPC分类号： H01L29/1054 , H01L21/76254 , H01L21/76259 , Y10S438/938
摘要： A process for preparing a semiconductor wafer with a strained layer having an elevated critical thickness. A first wafer having a strained layer of a semiconductor material on a matching layer is provided, with the semiconductor material having a first lattice parameter corresponding to a relaxed state and a first critical thickness corresponding to the first strained state, and the first thickness is less than the first critical thickness, The matching layer has a matching lattice parameter that is sufficiently different than the first lattice parameter to retain the strained layer in the strained state, The strained layer is transferred to a receiving substrate selected to provide the transferred strained layer with a second critical thickness that is greater than the first critical thickness, and additional semiconductor material is grown on the transferred strained layer to provide a second thickness that is greater than the first critical thickness and less than the second critical thickness, The invention also relates to the semiconductor structures that can be produced by the process.
摘要翻译： 一种制备具有临界厚度升高的应变层的半导体晶片的方法。 提供了在匹配层上具有半导体材料应变层的第一晶片，半导体材料具有对应于松弛状态的第一晶格参数和对应于第一应变状态的第一临界厚度，并且第一厚度较小 匹配层具有与第一晶格参数充分不同的匹配晶格参数，以将应变层保持在应变状态。应变层被转移到选择的接收衬底以提供转移的应变层， 第二临界厚度大于第一临界厚度，并且附加的半导体材料在转移的应变层上生长以提供大于第一临界厚度并小于第二临界厚度的第二厚度。本发明还涉及 可以通过该方法生产的半导体结构 。
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公开(公告)号：US20050255682A1
公开(公告)日：2005-11-17
申请号：US11165339
申请日：2005-06-24
IPC分类号： H01L21/301 , H01L21/762 , H01L29/10 , C30B1/00 , H01L21/20 , H01L21/36 , H01L21/425
CPC分类号： H01L29/1054 , H01L21/76254 , H01L21/76259 , Y10S438/938
摘要： The invention relates to a process for producing an electronic structure that includes a thin layer of strained semiconductor material from a donor wafer. The donor wafer has a lattice parameter matching layer that includes an upper layer of a semiconductor material having a first lattice parameter and a film of semiconductor material having a second, nominal, lattice parameter that is substantially different from the first lattice parameter and that is strained by the matching layer. This process includes transfer of the film to a receiving substrate. The invention also relates to the semiconductor structures that can be produced by the process.
摘要翻译： 本发明涉及一种用于制造电子结构的方法，该电子结构包括来自施主晶片的应变半导体材料的薄层。 施主晶片具有晶格参数匹配层，其包括具有第一晶格参数的半导体材料的上层和具有与第一晶格参数基本不同的第二标称晶格参数的半导体材料的膜，并且其被应变 由匹配层。 该方法包括将膜转移到接收衬底。 本发明还涉及可以通过该方法生产的半导体结构。
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公开(公告)号：US06953736B2
公开(公告)日：2005-10-11
申请号：US10615259
申请日：2003-07-09
IPC分类号： H01L21/301 , H01L21/762 , H01L29/10 , H01L21/30
CPC分类号： H01L29/1054 , H01L21/76254 , H01L21/76259 , Y10S438/938
摘要： The invention relates to a process for producing an electronic structure that includes a thin layer of strained semiconductor material from a donor wafer. The donor wafer has a lattice parameter matching layer that includes an upper layer of a semiconductor material having a first lattice parameter and a film of semiconductor material having a second, nominal, lattice parameter that is substantially different from the first lattice parameter and that is strained by the matching layer. This process includes transfer of the film to a receiving substrate. The invention also relates to the semiconductor structures that can be produced by the process.
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公开(公告)号：US07338883B2
公开(公告)日：2008-03-04
申请号：US11165339
申请日：2005-06-24
CPC分类号： H01L29/1054 , H01L21/76254 , H01L21/76259 , Y10S438/938
摘要： The invention relates to a process for producing an electronic structure that includes a thin layer of strained semiconductor material from a donor wafer. The donor wafer has a lattice parameter matching layer that includes an upper layer of a semiconductor material having a first lattice parameter and a film of semiconductor material having a second, nominal, lattice parameter that is substantially different from the first lattice parameter and that is strained by the matching layer. This process includes transfer of the film to a receiving substrate. The invention also relates to the semiconductor structures that can be produced by the process.
摘要翻译： 本发明涉及一种用于制造电子结构的方法，该电子结构包括来自施主晶片的应变半导体材料的薄层。 施主晶片具有晶格参数匹配层，其包括具有第一晶格参数的半导体材料的上层和具有与第一晶格参数基本不同的第二标称晶格参数的半导体材料的膜，并且其被应变 由匹配层。 该方法包括将膜转移到接收衬底。 本发明还涉及可以通过该方法生产的半导体结构。
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公开(公告)号：US20100314628A1
公开(公告)日：2010-12-16
申请号：US12862471
申请日：2010-08-24
CPC分类号： H01L29/1054 , H01L21/76254 , H01L21/76259 , Y10S438/938
摘要： Semiconductor wafers having a thin layer of strained semiconductor material. These structures include a substrate; an oxide layer upon the substrate; a silicon carbide (SiC) layer upon the oxide layer, and a strained layer of a semiconductor material in a strained state upon the silicon carbide layer, or a matching layer upon the donor substrate that is made from a material that induces strain in subsequent epitaxially grown layers thereon; a strained layer of a semiconductor material of defined thickness in a strained state; and an insulating or semi-insulating layer upon the strained layer in a thickness that retains the strained state of the strained layer. The insulating or semi-insulating layers are made of silicon carbide or oxides and act to retain strain in the strained layer.
摘要翻译： 半导体晶片具有应变半导体材料的薄层。 这些结构包括底物; 基底上的氧化物层; 氧化物层上的碳化硅（SiC）层，以及在碳化硅层上处于应变状态的半导体材料的应变层，或者由施主衬底上的由随后的外延生长引起应变的材料制成的匹配层 生长层; 在应变状态下具有规定厚度的半导体材料的应变层; 以及在应变层上的绝缘或半绝缘层，其厚度保持应变层的应变状态。 绝缘层或半绝缘层由碳化硅或氧化物制成并用于将应变保留在应变层中。
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公开(公告)号：US20080265261A1
公开(公告)日：2008-10-30
申请号：US12170583
申请日：2008-07-10
IPC分类号： H01L29/24 , H01L21/30 , H01L29/267
CPC分类号： H01L29/1054 , H01L21/76254 , H01L21/76259 , Y10S438/938
摘要： Semiconductor wafers having a thin layer of strained semiconductor material. These structures include a substrate; an oxide layer upon the substrate; a silicon carbide (SiC) layer upon the oxide layer, and a strained layer of a semiconductor material in a strained state upon the silicon carbide layer, or a matching layer upon the donor substrate that is made from a material that induces strain in subsequent epitaxially grown layers thereon; a strained layer of a semiconductor material of defined thickness in a strained state; and an insulating or semi-insulating layer upon the strained layer in a thickness that retains the strained state of the strained layer. The insulating or semi-insulating layers are made of silicon carbide or oxides and act to retain strain in the strained layer.
摘要翻译： 半导体晶片具有应变半导体材料的薄层。 这些结构包括底物; 基底上的氧化物层; 氧化物层上的碳化硅（SiC）层，以及在碳化硅层上处于应变状态的半导体材料的应变层，或者由施主衬底上的由随后的外延生长引起应变的材料制成的匹配层 生长层; 在应变状态下具有规定厚度的半导体材料的应变层; 以及在应变层上的绝缘或半绝缘层，其厚度保持应变层的应变状态。 绝缘层或半绝缘层由碳化硅或氧化物制成并用于将应变保留在应变层中。
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10.发明授权Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit 有权应变通道隔离栅场效应晶体管，制造相同的集成电路的过程公开(公告)号：US06989570B2
公开(公告)日：2006-01-24
申请号：US10405075
申请日：2003-03-31
申请人： Thomas Skotnicki , Daniel Bensahel
发明人： Thomas Skotnicki , Daniel Bensahel
IPC分类号： H01L27/12
CPC分类号： H01L29/66651 , H01L29/0649 , H01L29/41783 , H01L29/66772 , H01L29/7842 , H01L29/78618 , H01L29/78639 , H01L29/78687
摘要： A transistor is located on a base layer 1 resting on a semiconductor substrate SB and formed from a relaxed silicon-germanium layer, and includes, under the isolated gate 7, a first strained silicon layer 2 resting on the base layer 1, surmounted by a buried insulating layer 10, surmounted by a second strained silicon layer 4 extending between the source S and drain D regions.
摘要翻译： 晶体管位于沉积在半导体衬底SB上的基底层1上并由松弛的硅 - 锗层形成，并且在隔离栅极7下方包括搁置在基底层1上的第一应变硅层2， 掩埋绝缘层10，其由在源极S和漏极D区域之间延伸的第二应变硅层4所覆盖。
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