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公开(公告)号：US20080198453A1
公开(公告)日：2008-08-21
申请号：US11709718
申请日：2007-02-21
IPC分类号： G02B5/30
CPC分类号： G02B5/3058 , G02B5/3075 , G02F1/0136 , G03F7/70566
摘要： According to one exemplary embodiment, an optical polarizer positioned before a light source for use in semiconductor wafer lithography includes an array of aligned nanotubes. The array of aligned nanotubes cause light emitted from the light source and incident on the array of aligned nanotubes to be converted into polarized light for use in the semiconductor wafer lithography. The amount of polarization can be controlled by a voltage source coupled to the array of aligned nanotubes. Chromogenic material of a light filtering layer can vary the wavelength of the polarized light transmitted through the array of aligned nanotubes.
摘要翻译： 根据一个示例性实施例，定位在用于半导体晶片光刻的光源之前的光学偏振器包括排列的纳米管阵列。 排列的纳米管的阵列引起从光源发射并入射到排列的纳米管阵列上的光，以转换为偏光，用于半导体晶片光刻。 极化量可以通过耦合到排列的纳米管阵列的电压源来控制。 光过滤层的显色材料可以改变通过排列的纳米管阵列传输的偏振光的波长。
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公开(公告)号：US08792161B2
公开(公告)日：2014-07-29
申请号：US11709718
申请日：2007-02-21
IPC分类号： G02B5/30
CPC分类号： G02B5/3058 , G02B5/3075 , G02F1/0136 , G03F7/70566
摘要： An optical polarizer positioned before a light source for use in semiconductor wafer lithography including an array of aligned nanotubes. The array of aligned nanotubes cause light emitted from the light source and incident on the array of aligned nanotubes to be converted into polarized light for use in the semiconductor wafer lithography. The amount of polarization can be controlled by a voltage source coupled to the array of aligned nanotubes. Chromogenic material of a light filtering layer can vary the wavelength of the polarized light transmitted through the array of aligned nanotubes.
摘要翻译： 位于用于半导体晶片光刻的光源之前的光学偏振器，包括排列的纳米管阵列。 排列的纳米管的阵列引起从光源发射并入射到排列的纳米管阵列上的光，以转换为偏光，用于半导体晶片光刻。 极化量可以通过耦合到排列的纳米管阵列的电压源来控制。 光过滤层的显色材料可以改变通过排列的纳米管阵列传输的偏振光的波长。
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3.发明授权Method for forming a high resolution resist pattern on a semiconductor wafer 有权在半导体晶片上形成高分辨率抗蚀剂图案的方法公开(公告)号：US08586269B2
公开(公告)日：2013-11-19
申请号：US11726433
申请日：2007-03-22
IPC分类号： G11B11/105
CPC分类号： G03F7/38
摘要： In one disclosed embodiment, a method for forming a high resolution resist pattern on a semiconductor wafer involves forming a layer of resist comprising, for example a polymer matrix and a catalytic species, over a material layer formed over a semiconductor wafer; exposing the layer of resist to patterned radiation; and applying a magnetic field to the semiconductor wafer during a post exposure bake process. In one embodiment, the patterned radiation is provided by an extreme ultraviolet (EUV) light source. In other embodiments, the source of patterned radiation can be an electron beam, or ion beam, for example. In one embodiment, the polymer matrix is an organic polymer matrix such as, for example, styrene, acrylate, or methacrylate. In one embodiment, the catalytic species can be, for example, an acid, a base, or an oxidizing agent.
摘要翻译： 在一个公开的实施例中，在半导体晶片上形成高分辨率抗蚀剂图案的方法包括在半导体晶片上形成的材料层上形成包含例如聚合物基质和催化物质的抗蚀剂层; 将抗蚀剂层暴露于图案化辐射; 以及在后曝光烘烤处理期间向半导体晶片施加磁场。 在一个实施例中，图案化的辐射由极紫外（EUV）光源提供。 在其它实施例中，图案化辐射源可以是例如电子束或离子束。 在一个实施方案中，聚合物基质是有机聚合物基质，例如苯乙烯，丙烯酸酯或甲基丙烯酸酯。 在一个实施方案中，催化物质可以是例如酸，碱或氧化剂。
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4.发明申请Method for forming a high resolution resist pattern on a semiconductor wafer 有权在半导体晶片上形成高分辨率抗蚀剂图案的方法公开(公告)号：US20080233494A1
公开(公告)日：2008-09-25
申请号：US11726433
申请日：2007-03-22
IPC分类号： G03C11/00
CPC分类号： G03F7/38
摘要： In one disclosed embodiment, a method for forming a high resolution resist pattern on a semiconductor wafer involves forming a layer of resist comprising, for example a polymer matrix and a catalytic species, over a material layer formed over a semiconductor wafer; exposing the layer of resist to patterned radiation; and applying a magnetic field to the semiconductor wafer during a post exposure bake process. In one embodiment, the patterned radiation is provided by an extreme ultraviolet (EUV) light source. In other embodiments, the source of patterned radiation can be an electron beam, or ion beam, for example. In one embodiment, the polymer matrix is an organic polymer matrix such as, for example, styrene, acrylate, or methacrylate. In one embodiment, the catalytic species can be, for example, an acid, a base, or an oxidizing agent.
摘要翻译： 在一个公开的实施例中，在半导体晶片上形成高分辨率抗蚀剂图案的方法包括在半导体晶片上形成的材料层上形成包含例如聚合物基质和催化物质的抗蚀剂层; 将抗蚀剂层暴露于图案化辐射; 以及在后曝光烘烤处理期间向半导体晶片施加磁场。 在一个实施例中，图案化的辐射由极紫外（EUV）光源提供。 在其它实施例中，图案化辐射源可以是例如电子束或离子束。 在一个实施方案中，聚合物基质是有机聚合物基质，例如苯乙烯，丙烯酸酯或甲基丙烯酸酯。 在一个实施方案中，催化物质可以是例如酸，碱或氧化剂。
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5.发明授权公开(公告)号：US08338061B2
公开(公告)日：2012-12-25
申请号：US13158234
申请日：2011-06-10
IPC分类号： G03F1/00
摘要： Fluorine-passivated reticles for use in lithography and methods for fabricating and using such reticles are provided. According to one embodiment, a method for performing photolithography comprises placing a fluorine-passivated reticle between an illumination source and a target semiconductor wafer and causing electromagnetic radiation to pass from the illumination source through the fluorine-passivated reticle to the target semiconductor wafer. In another embodiment, a fluorine-passivated reticle comprises a substrate and a patterned fluorine-passivated absorber material layer overlying the substrate. According to another embodiment, a method for fabricating a reticle for use in photolithography comprises providing a substrate and forming a fluorine-passivated absorber material layer overlying the substrate.
摘要翻译： 提供用于光刻的氟钝化的掩模版以及制造和使用这种掩模版的方法。 根据一个实施例，一种用于执行光刻的方法包括在照明源和目标半导体晶片之间放置氟钝化的掩模版，并使电磁辐射从照明源通过氟钝化掩模版到达目标半导体晶片。 在另一个实施例中，氟钝化的掩模版包括衬底和覆盖衬底的图案化的氟钝化吸收材料层。 根据另一实施例，一种用于光刻中使用的掩模版的制造方法包括提供基板并形成覆盖在基板上的氟钝化的吸收材料层。
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公开(公告)号：US06716571B2
公开(公告)日：2004-04-06
申请号：US09819343
申请日：2001-03-28
IPC分类号： G03F700
CPC分类号： H01L21/28123 , Y10S430/143
摘要： A process for forming sub-lithographic features in an integrated circuit is disclosed herein. The process includes modifying a photoresist layer after patterning and development but before it is utilized to pattern the underlying layers. The modified photoresist layer has different etch rates in the vertical and horizontal directions. The modified photoresist layer is trimmed with a plasma etch. A feature included in the trimmed photoresist layer has a sub-lithographic lateral dimension.
摘要翻译： 本文公开了在集成电路中形成次光刻特征的工艺。 该方法包括在图案化和显影之后但在其用于对下面的层进行图案化之前修饰光致抗蚀剂层。 改性光致抗蚀剂层在垂直和水平方向具有不同的蚀刻速率。 用等离子体蚀刻修整修饰的光致抗蚀剂层。 修整的光致抗蚀剂层中包括的特征具有亚光刻横向尺寸。
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7.发明授权公开(公告)号：US07985513B2
公开(公告)日：2011-07-26
申请号：US12050383
申请日：2008-03-18
IPC分类号： G03F1/00
摘要： Fluorine-passivated reticles for use in lithography and methods for fabricating and using such reticles are provided. According to one embodiment, a method for performing photolithography comprises placing a fluorine-passivated reticle between an illumination source and a target semiconductor wafer and causing electromagnetic radiation to pass from the illumination source through the fluorine-passivated reticle to the target semiconductor wafer. In another embodiment, a fluorine-passivated reticle comprises a substrate and a patterned fluorine-passivated absorber material layer overlying the substrate. According to another embodiment, a method for fabricating a reticle for use in photolithography comprises providing a substrate and forming a fluorine-passivated absorber material layer overlying the substrate.
摘要翻译： 提供用于光刻的氟钝化的掩模版以及制造和使用这种掩模版的方法。 根据一个实施例，一种用于执行光刻的方法包括在照明源和目标半导体晶片之间放置氟钝化的掩模版，并使电磁辐射从照明源通过氟钝化掩模版到达目标半导体晶片。 在另一个实施例中，氟钝化的掩模版包括衬底和覆盖衬底的图案化的氟钝化吸收材料层。 根据另一实施例，一种用于光刻中使用的掩模版的制造方法包括提供基板并形成覆盖在基板上的氟钝化的吸收材料层。
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公开(公告)号：US20070281248A1
公开(公告)日：2007-12-06
申请号：US11421327
申请日：2006-05-31
IPC分类号： G03F7/26
CPC分类号： G03F7/40 , G03F7/0035
摘要： An integrated circuit fabrication process as described herein employs a photoresist stabilization step where patterned photoresist material is exposed to radiation having a wavelength that promotes cross-linking in the shallow surfaces of the patterned photoresist features. The patterned photoresist material is highly absorptive of the stabilizing radiation, which results in the surface cross-linking and modification of the outer surfaces of the patterned photoresist material. This modified “shell” is immune to photoresist developer, photoresist solvents, intense ion implantation, and intense etchants. The shell also enables for the resist not to deform when baked at a temperature above its glass transition temperature. For example, the photoresist stabilization technique can be used in a double exposure process such that a patterned photoresist layer remains intact during a subsequent lithographic sub-process.
摘要翻译： 如本文所述的集成电路制造方法采用光致抗蚀剂稳定步骤，其中图案化的光致抗蚀剂材料暴露于具有促进图案化光致抗蚀剂特征的浅表面中的交联的波长的辐射。 图案化的光致抗蚀剂材料对稳定辐射是高度吸收的，这导致图案化光致抗蚀剂材料的外表面的表面交联和修饰。 这种改性的“壳”对光致抗蚀剂显影剂，光致抗蚀剂溶剂，强离子注入和强蚀刻剂是免疫的。 壳体还使得当在高于其玻璃化转变温度的温度下烘烤时，抗蚀剂不会变形。 例如，光致抗蚀剂稳定技术可以用于双重曝光工艺中，使得图案化的光致抗蚀剂层在随后的光刻子过程期间保持完整。
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公开(公告)号：US07851136B2
公开(公告)日：2010-12-14
申请号：US11421327
申请日：2006-05-31
IPC分类号： G03F7/26
CPC分类号： G03F7/40 , G03F7/0035
摘要： An integrated circuit fabrication process as described herein employs a photoresist stabilization step where patterned photoresist material is exposed to radiation having a wavelength that promotes cross-linking in the shallow surfaces of the patterned photoresist features. The patterned photoresist material is highly absorptive of the stabilizing radiation, which results in the surface cross-linking and modification of the outer surfaces of the patterned photoresist material. This modified “shell” is immune to photoresist developer, photoresist solvents, intense ion implantation, and intense etchants. The shell also enables for the resist not to deform when baked at a temperature above its glass transition temperature. For example, the photoresist stabilization technique can be used in a double exposure process such that a patterned photoresist layer remains intact during a subsequent lithographic sub-process.
摘要翻译： 如本文所述的集成电路制造方法采用光致抗蚀剂稳定步骤，其中图案化的光致抗蚀剂材料暴露于具有促进图案化光致抗蚀剂特征的浅表面中的交联的波长的辐射。 图案化的光致抗蚀剂材料对稳定辐射是高度吸收的，这导致图案化光致抗蚀剂材料的外表面的表面交联和修饰。 这种改性的“壳”对光致抗蚀剂显影剂，光致抗蚀剂溶剂，强离子注入和强蚀刻剂是免疫的。 壳体还使得当在高于其玻璃化转变温度的温度下烘烤时，抗蚀剂不会变形。 例如，光致抗蚀剂稳定技术可以用于双重曝光工艺中，使得图案化的光致抗蚀剂层在随后的光刻子过程期间保持完整。
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10.发明授权Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems 有权浸没式光刻系统中浸没介质中气泡消除的方法和装置公开(公告)号：US07014966B2
公开(公告)日：2006-03-21
申请号：US10653844
申请日：2003-09-02
申请人： Adam R. Pawloski , Amr Y. Abdo , Gilles R. Amblard , Bruno M. LaFontaine , Ivan Lalovic , Harry J. Levinson , Jeffrey A. Schefske , Cyrus E. Tabery , Frank Tsai
发明人： Adam R. Pawloski , Amr Y. Abdo , Gilles R. Amblard , Bruno M. LaFontaine , Ivan Lalovic , Harry J. Levinson , Jeffrey A. Schefske , Cyrus E. Tabery , Frank Tsai
IPC分类号： G03F7/20
CPC分类号： G03F7/70341
摘要： A method of operating an immersion lithography system, including steps of immersing at least a portion of a wafer to be exposed in an immersion medium, wherein the immersion medium comprises at least one bubble; directing an ultrasonic wave through at least a portion of the immersion medium to disrupt and/or dissipate the at least one bubble; and exposing the wafer with an exposure pattern by passing electromagnetic radiation through the immersion medium subsequent to the directing. Also disclosed is a monitoring and control system for an immersion lithography system.
摘要翻译： 一种操作浸没式光刻系统的方法，包括将要曝光的晶片的至少一部分浸入浸没介质中的步骤，其中浸没介质包括至少一个气泡; 引导超声波穿过所述浸没介质的至少一部分以破坏和/或消散所述至少一个气泡; 以及在引导之后通过使电磁辐射穿过浸渍介质，以曝光图案曝光晶片。 还公开了一种用于浸没式光刻系统的监视和控制系统。
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