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    SEMICONDUCTOR WAFER EVALUATION METHOD AND SEMICONDUCTOR WAFER
    1.
    发明申请
    SEMICONDUCTOR WAFER EVALUATION METHOD AND SEMICONDUCTOR WAFER 审中-公开

    公开(公告)号：US20180292330A1

    公开(公告)日：2018-10-11

    申请号：US15765857

    申请日：2016-08-23

    申请人： SUMCO CORPORATION

    发明人： Keiichiro MORI

    IPC分类号： G01N21/94 ,  G01N21/95 ,  G02B5/30

    CPC分类号： G01N21/94 ,  G01N21/9501 ,  G01N2021/8848 ,  G02B5/3075

    摘要： A method of evaluating a semiconductor wafer, which has a polished surface, by using a laser surface-inspection device including incident and light-receiving systems, includes evaluating the semiconductor wafer by detecting, as a light point defect, an abnormality of a process-induced defect and a surface-adhered foreign matter present on the polished surface of the semiconductor wafer, on the basis of measurement result obtained by directing incident light to the polished surface of the semiconductor wafer from one incident system and receiving, with a first light-receiving system, radiation light which has been radiated by the incident light being reflected or scattered by the polished surface, measurement result obtained by receiving the radiation light with a second light-receiving system, and measurement result obtained by receiving the radiation light with a third light-receiving system, and at least one of a light-receiving angle and polarization selectivity differs among the first, second and third light-receiving systems.

    Optical system of a microlithographic projection exposure apparatus
    5.
    发明授权
    Optical system of a microlithographic projection exposure apparatus 有权

    公开(公告)号：US09817317B2

    公开(公告)日：2017-11-14

    申请号：US14513944

    申请日：2014-10-14

    申请人： Carl Zeiss SMT GmbH

    发明人： Ingo Saenger ,  Frank Schlesener

    IPC分类号： G03F7/20 ,  G02B5/30

    CPC分类号： G03F7/70191 ,  G02B5/3066 ,  G02B5/3075 ,  G03F7/70075 ,  G03F7/70091 ,  G03F7/70108 ,  G03F7/70116 ,  G03F7/702 ,  G03F7/70566

    摘要： The invention relates to an optical system of a microlithographic projection exposure apparatus, in particular for operation in the EUV, comprising at least one polarization-influencing arrangement having a first reflection surface and a second reflection surface, wherein the first reflection surface and the second reflection surface are arranged at an angle of 0°±10° or at an angle of 90°±10° relative to one another, wherein light incident on the first reflection surface during the operation of the optical system forms an angle of 45°±5° with the first reflection surface, and wherein the polarization-influencing arrangement is rotatable about a rotation axis running parallel to the light propagation direction of light incident on the first reflection surface during the operation of the optical system.

    POLARIZATION FILTER HAVING METALLIC WEBS
    10.
    发明申请
    POLARIZATION FILTER HAVING METALLIC WEBS 审中-公开
    带有金属网的极化滤波器

    公开(公告)号：US20160202405A1

    公开(公告)日：2016-07-14

    申请号：US14993313

    申请日：2016-01-12

    申请人： FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

    发明人： NORBERT WEBER ,  STEPHAN JUNGER ,  HARALD NEUBAUER

    IPC分类号： G02B5/30 ,  G01J4/04

    CPC分类号： G02B5/3058 ,  G01J4/04 ,  G02B5/3075

    摘要： The present invention relates to a polarization filter which is formed by at least one periodic line grid made from parallel extending metallic webs on a dielectric layer. The metallic webs are interrupted in their longitudinal extension by slots. The centre-to-centre distances between the slots are greater than the period of the line grid in a direction parallel to the metallic webs. The proposed polarization filter can be produced with a CMOS process with high reliability, in particular for the visible spectral range, even over a larger area.

    摘要翻译： 本发明涉及一种偏振滤光片，其由在电介质层上由平行延伸的金属网制成的至少一个周期性线栅形成。 金属腹板通过狭槽在其纵向延伸中断。 槽之间的中心到中心的距离大于平行于金属网的方向的线栅格的周期。 所提出的偏振滤波器可以用高可靠性的CMOS工艺制造，特别是对于可见光谱范围，即使在更大的面积上也是如此。