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1.发明授权公开(公告)号：US07561465B2
公开(公告)日：2009-07-14
申请号：US11724774
申请日：2007-03-16
IPC分类号： G11C16/06
CPC分类号： G11C16/3404 , G11C11/5671 , G11C16/3418 , G11C16/3422 , G11C16/3431 , G11C2029/0411
摘要： One embodiment of the invention relates to a method for refreshing a nonvolatile memory array. In the method, a threshold voltage of a multi-bit memory cell is analyzed to determine if it has drifted outside of a number of allowable voltage windows, wherein each allowable voltage windows corresponds to a different multi-bit value. If the threshold voltage of the cell has drifted outside of the number of allowable voltage states, then the cell is recovered by adjusting at least one voltage boundary of at least one of the number of allowable voltage states.
摘要翻译： 本发明的一个实施例涉及一种用于刷新非易失性存储器阵列的方法。 在该方法中，分析多位存储单元的阈值电压以确定其是否漂移在许多允许电压窗口之外，其中每个可允许电压窗对应于不同的多位值。 如果电池的阈值电压漂移在容许电压状态数之外，则通过调节至少一个容许电压状态数量的至少一个电压边界来恢复电池。
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公开(公告)号：US20080175054A1
公开(公告)日：2008-07-24
申请号：US11724774
申请日：2007-03-16
CPC分类号： G11C16/3404 , G11C11/5671 , G11C16/3418 , G11C16/3422 , G11C16/3431 , G11C2029/0411
摘要： One embodiment of the invention relates to a method for refreshing a nonvolatile memory array. In the method, a threshold voltage of a multi-bit memory cell is analyzed to determine if it has drifted outside of a number of allowable voltage windows, wherein each allowable voltage windows corresponds to a different multi-bit value. If the threshold voltage of the cell has drifted outside of the number of allowable voltage states, then the cell is recovered by adjusting at least one voltage boundary of at least one of the number of allowable voltage states.
摘要翻译： 本发明的一个实施例涉及一种用于刷新非易失性存储器阵列的方法。 在该方法中，分析多位存储单元的阈值电压以确定其是否漂移在许多允许电压窗口之外，其中每个可允许电压窗对应于不同的多位值。 如果电池的阈值电压漂移在容许电压状态数之外，则通过调节至少一个容许电压状态数量的至少一个电压边界来恢复电池。
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