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公开(公告)号:US20200269279A1
公开(公告)日:2020-08-27
申请号:US16683750
申请日:2019-11-14
Applicant: Butterfly Network, Inc.
Inventor: Lingyun Miao , Jianwei Liu , Keith G. Fife
Abstract: A method of forming an ultrasonic transducer device includes forming and patterning a film stack over a substrate, the film stack comprising a metal electrode layer and a chemical mechanical polishing (CMP) stop layer formed over the metal electrode layer; forming an insulation layer over the patterned film stack; planarizing the insulation layer to the CMP stop layer; measuring a remaining thickness of the CMP stop layer; and forming a membrane support layer over the patterned film stack, wherein the membrane support layer is formed at thickness dependent upon the measured remaining thickness of the CMP stop layer, such that a combined thickness of the CMP stop layer and the membrane support layer corresponds to a desired transducer cavity depth.
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公开(公告)号:US20200147641A1
公开(公告)日:2020-05-14
申请号:US16680956
申请日:2019-11-12
Applicant: Butterfly Network, Inc.
Inventor: Keith G. Fife , Lingyun Miao , Jianwei Liu , Jonathan M. Rothberg
Abstract: A method of forming an ultrasonic transducer device includes bonding a membrane to seal a transducer cavity with at least a portion of a getter material layer being exposed, the getter material layer comprising a portion of a bilayer stack compatible for use in damascene processing.
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公开(公告)号:US20200254487A1
公开(公告)日:2020-08-13
申请号:US16784186
申请日:2020-02-06
Applicant: Butterfly Network, Inc.
Inventor: Lingyun Miao , Jianwei Liu , Jonathan M. Rothberg
Abstract: A method of forming an ultrasonic transducer device includes forming a patterned metal electrode layer over a substrate, the patterned metal electrode layer comprising a lower layer and an upper layer formed on the lower layer; forming an insulation layer over the patterned metal electrode layer; and planarizing the insulation layer to the upper layer of the patterned metal electrode layer, wherein the upper layer comprises a electrically conductive material that serves as a chemical mechanical polishing (CMP) stop layer that has CMP selectivity with respect to the insulation layer and the lower layer, and wherein the upper layer has a CMP removal rate slower than that of the insulation layer.
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公开(公告)号:US20210038193A1
公开(公告)日:2021-02-11
申请号:US16988125
申请日:2020-08-07
Applicant: Butterfly Network, Inc.
Inventor: Jianwei Liu , Lingyun Miao , Sarp Satir
Abstract: An ultrasonic transducer device is provided. In some embodiments, the ultrasonic transducer device includes a substrate having a membrane support layer formed on a bottom cavity layer, and an opening in the membrane support layer so as to form a transducer cavity. In some embodiments, the opening comprises a truncated circle shape.
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