公开(公告)号：US20090273881A1

公开(公告)日：2009-11-05

申请号：US12503780

申请日：2009-07-15

申请人： Yuan Wang ,  Buxin Zhang

发明人： Yuan Wang ,  Buxin Zhang

IPC分类号： H01G4/00

CPC分类号： H01L23/5223 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a metal-insulator-metal capacitor, which comprises a semiconductor substrate; an interlayer dielectric layer disposed on the semiconductor substrate; and an insulation trench and two metal trenches all running through the interlayer dielectric layer and allowing the semiconductor substrate to be exposed; wherein the metal trenches being located on each side of the insulation trench and sharing a trench wall with the insulation trench respectively, the insulation trench being filled with insulation material as an insulation structure, the metal trenches being filled with metal material as electrodes of the capacitor.

摘要翻译： 本发明提供了一种金属 - 绝缘体 - 金属电容器，其包括半导体衬底; 设置在所述半导体衬底上的层间绝缘层; 以及绝缘沟槽和两个全部穿过层间电介质层的金属沟槽，并使半导体衬底露出; 其中所述金属沟槽位于所述绝缘沟槽的每一侧上，并且分别与所述绝缘沟槽共享沟槽壁，所述绝缘沟槽被填充有绝缘材料作为绝缘结构，所述金属沟槽充满金属材料作为所述电容器的电极 。

公开(公告)号：US20080230843A1

公开(公告)日：2008-09-25

申请号：US11951072

申请日：2007-12-05

申请人： Buxin Zhang ,  Yuan Wang

发明人： Buxin Zhang ,  Yuan Wang

IPC分类号： H01L27/092 ,  H01L21/76

CPC分类号： H01L21/823878 ,  H01L21/762 ,  H01L21/76237

摘要： A method for forming isolation structure for MOS transistor is disclosed, which includes forming a first photoresist layer over a sacrificed oxide layer of a semiconductor substrate, patterning the first photoresist layer to define a PMOS active region and a PMOS isolation region; implanting nitrogen ions into the PMOS isolation region through the sacrificed oxide layer by using the first photoresist layer as a mask; removing the first photoresist layer; forming a second photoresist layer over the sacrificed oxide layer, patterning the second photoresist layer to define a NMOS active region and a NMOS isolation region; implanting oxygen ions into the NMOS isolation region through the sacrificed oxide layer by using the second photoresist layer as a mask; removing the second photoresist layer and the sacrificed oxide layer; and annealing the semiconductor substrate to form isolation structures of PMOS and NMOS, respectively.

摘要翻译： 公开了一种用于形成用于MOS晶体管的隔离结构的方法，其包括在半导体衬底的牺牲氧化物层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以限定PMOS有源区和PMOS隔离区; 通过使用第一光致抗蚀剂层作为掩模，通过牺牲的氧化物层将氮离子注入到PMOS隔离区; 去除第一光致抗蚀剂层; 在牺牲的氧化物层上形成第二光致抗蚀剂层，图案化第二光致抗蚀剂层以限定NMOS有源区和NMOS隔离区; 通过使用第二光致抗蚀剂层作为掩模将氧离子注入通过牺牲的氧化物层的NMOS隔离区; 去除第二光致抗蚀剂层和牺牲的氧化物层; 并对半导体衬底进行退火以分别形成PMOS和NMOS的隔离结构。

公开(公告)号：US07897454B2

公开(公告)日：2011-03-01

申请号：US11833236

申请日：2007-08-03

申请人： Yuan Wang ,  Buxin Zhang

发明人： Yuan Wang ,  Buxin Zhang

IPC分类号： H01L21/8242 ,  H01L21/00

CPC分类号： H01L23/5223 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a metal-insulator-metal capacitor, which comprises a semiconductor substrate; an interlayer dielectric layer disposed on the semiconductor substrate; and an insulation trench and two metal trenches all running through the interlayer dielectric layer and allowing the semiconductor substrate to be exposed; wherein the metal trenches being located on each side of the insulation trench and sharing a trench wall with the insulation trench respectively, the insulation trench being filled with insulation material as an insulation structure, the metal trenches being filled with metal material as electrodes of the capacitor.

摘要翻译： 本发明提供了一种金属 - 绝缘体 - 金属电容器，其包括半导体衬底; 设置在所述半导体衬底上的层间绝缘层; 以及绝缘沟槽和两个全部穿过层间电介质层的金属沟槽，并使半导体衬底露出; 其中所述金属沟槽位于所述绝缘沟槽的每一侧上，并且分别与所述绝缘沟槽共享沟槽壁，所述绝缘沟槽被填充有绝缘材料作为绝缘结构，所述金属沟槽充满金属材料作为所述电容器的电极 。

公开(公告)号：US07718506B2

公开(公告)日：2010-05-18

申请号：US11951072

申请日：2007-12-05

申请人： Buxin Zhang ,  Yuan Wang

发明人： Buxin Zhang ,  Yuan Wang

IPC分类号： H01L21/76

CPC分类号： H01L21/823878 ,  H01L21/762 ,  H01L21/76237

摘要： A method for forming isolation structure for MOS transistor is disclosed, which includes forming a first photoresist layer over a sacrificed oxide layer of a semiconductor substrate, patterning the first photoresist layer to define a PMOS active region and a PMOS isolation region; implanting nitrogen ions into the PMOS isolation region through the sacrificed oxide layer by using the first photoresist layer as a mask; removing the first photoresist layer; forming a second photoresist layer over the sacrificed oxide layer, patterning the second photoresist layer to define a NMOS active region and a NMOS isolation region; implanting oxygen ions into the NMOS isolation region through the sacrificed oxide layer by using the second photoresist layer as a mask; removing the second photoresist layer and the sacrificed oxide layer; and annealing the semiconductor substrate to form isolation structures of PMOS and NMOS, respectively.

摘要翻译： 公开了一种用于形成用于MOS晶体管的隔离结构的方法，其包括在半导体衬底的牺牲氧化物层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以限定PMOS有源区和PMOS隔离区; 通过使用第一光致抗蚀剂层作为掩模，通过牺牲的氧化物层将氮离子注入到PMOS隔离区; 去除第一光致抗蚀剂层; 在牺牲的氧化物层上形成第二光致抗蚀剂层，图案化第二光致抗蚀剂层以限定NMOS有源区和NMOS隔离区; 通过使用第二光致抗蚀剂层作为掩模将氧离子注入通过牺牲的氧化物层的NMOS隔离区; 去除第二光致抗蚀剂层和牺牲的氧化物层; 并对半导体衬底进行退火以分别形成PMOS和NMOS的隔离结构。