公开(公告)号：US06333251B1

公开(公告)日：2001-12-25

申请号：US09639122

申请日：2000-08-16

申请人： Eun-ha Lee ,  Byung-chan Lee ,  Ho-kyu Kang

发明人： Eun-ha Lee ,  Byung-chan Lee ,  Ho-kyu Kang

IPC分类号： H01L213205

CPC分类号： H01L29/66636 ,  H01L21/28052 ,  H01L21/28247

摘要： A method of fabricating a gate of a semiconductor device, by which damage to a gate oxide layer is repaired, is provided. In an aspect of the method, a gate oxide layer is formed on a semiconductor substrate. A conductive layer containing silicon is formed on the gate oxide layer. A stacked structure with a polycrystalline silicon layer and a dichlorosilane-family tungsten silicide layer can be used as the conductive layer. A gate is formed by patterning the conductive layer. A silicon source layer which covers the sidewall of the gate is formed by selective epitaxial growth of silicon. The silicon source layer is grown to a thickness of about 200 Å or less. The silicon source layer is thermally treated at an oxidation atmosphere, thus repairing damage to the gate oxide layer.

摘要翻译： 提供一种制造半导体器件的栅极的方法，通过该栅极对栅极氧化物层的损坏进行修复。 在该方法的一个方面中，在半导体衬底上形成栅氧化层。 在栅极氧化物层上形成含有硅的导电层。 可以使用具有多晶硅层和二氯硅烷族硅化钨层的堆叠结构作为导电层。 通过图案化导电层形成栅极。 通过硅的选择性外延生长形成覆盖栅极侧壁的硅源层。 硅源层生长至大约或以下的厚度。 硅源层在氧化气氛下热处理，从而修复对栅极氧化物层的损伤。

公开(公告)号：US6120134A

公开(公告)日：2000-09-19

申请号：US76886

申请日：1998-05-13

申请人： Byung-chan Lee

发明人： Byung-chan Lee

IPC分类号： B41J2/045 ,  B41J2/02 ,  B41J2/055 ,  B41J2/16 ,  B41J2/17 ,  B41J2/04

CPC分类号： B41J2/02 ,  B41J2202/22

摘要： An ink jet print head, which sprays ink continuously by fixing an ink spray unit on which thin film layers each having a different residual stress are deposited so that both ends thereof are fixed on an ink chamber barrier layer located at the lower part of a nozzle plate, applying an electrostatic force to the thin film layers and then applying an impact force generated by the extension of the absolute lengths of the thin film layers caused by the difference of the residual stresses of the thin film layers.

摘要翻译： 一种喷墨打印头，其通过固定喷墨单元来喷墨，所述喷墨单元沉积有各自具有不同残余应力的薄膜层，使得其两端固定在位于喷嘴下部的墨室阻挡层 对薄膜层施加静电力，然后施加由薄膜层的残余应力差引起的由薄膜层的绝对长度延伸而产生的冲击力。