公开(公告)号：US20240387164A1

公开(公告)日：2024-11-21

申请号：US18691373

申请日：2022-01-28

Applicant: CANSEMI TECHNOLOGY INC.

Inventor： Ruijing HAN ,  Hui ZENG

IPC: H01L21/02

Abstract: The present invention provides a wafer cleaning method and a method for manufacturing semiconductor device. The wafer cleaning method includes: protonating a cleaning solution with a protonator; cleaning a wafer surface with the protonated cleaning solution so that the cleaned wafer surface carries an amount of negative charge smaller than an amount of negative charge present on a wafer surface that has been cleaned with a non-protonated cleaning solution and is covered with a liquid film of the cleaning solution; and purging the wafer surface with a drying gas to remove the liquid film from a center of the wafer surface towards its periphery. The technique proposed in the present invention is able to desirably suppress static electricity on a wafer surface and effectively reduce device failure that may be caused by static electricity, thereby increasing overall yield of integrated circuit manufacture.

公开(公告)号：US20240202399A1

公开(公告)日：2024-06-20

申请号：US18555176

申请日：2021-12-28

Applicant: CANSEMI TECHNOLOGY INC.

Inventor： Ruijing HAN ,  Hui ZENG

IPC: G06F30/20 ,  G06F113/08 ,  G06F113/18 ,  H01L21/306

CPC classification number: G06F30/20 ,  H01L21/30604 ,  G06F2113/08 ,  G06F2113/18

Abstract: A method of modeling a wet etching process and a method of manufacturing a semiconductor device are disclosed. The modeling method includes: establishing partial differential equations of a reaction-diffusion system for chemical reactions involved in the wet etching process which is performed on a wafer surface using a mixed acid solution; obtaining formulas for the chemical reaction functions by applying the Brusselator model thereto; linearizing and expanding the formulas for the chemical reaction functions and thereby determining conditions for developing a chemical clock for the chemical reactions; calculating simulation parameters of the formulas for the chemical reaction functions; determining diffusion coefficients in the spatial diffusion terms, which allow formation of dome-shaped micro-cavities, thereby obtaining a mathematical model of the reaction-diffusion system for the chemical reactions involved in the wet etching process on the wafer surface. With the present invention, an optimal mixture ratio of the mixed acid solution can be rapidly and accurately determined, which enables formation of morphologically optimal dome-shaped micro-cavities on the wafer surface as a result of the etching process and hence improved performance of the semiconductor device being fabricated.