公开(公告)号：US12125874B2

公开(公告)日：2024-10-22

申请号：US17647481

申请日：2022-01-10

申请人： CHANGXIN MEMORY TECHNOLOGIES, INC.

发明人： Kyoungyoon Baek

IPC分类号： H01L23/522 ,  H01L49/02 ,  H10B12/00

CPC分类号： H01L28/92

摘要： The present disclosure provides a method of manufacturing a semiconductor structure, and a semiconductor structure. The method of manufacturing a semiconductor structure includes: providing an initial structure, wherein the initial structure includes a substrate, a laminated structure, and capacitor units, and the laminated structure includes support layers; forming a first mask layer, wherein the first mask layer covers a top surface of the laminated structure; forming a first opening in the first mask layer, wherein the first opening exposes the top surface of the laminated structure, and a projection region of the first opening on the substrate at least partially overlaps with projection regions of the capacitor units on the substrate; forming a shielding structure, wherein the shielding structure is located in the first opening, and the shielding structure covers a sidewall of the first opening.