THIN-FILM SOLAR CELL
    1.
    发明申请
    THIN-FILM SOLAR CELL 审中-公开
    薄膜太阳能电池

    公开(公告)号:US20130160828A1

    公开(公告)日:2013-06-27

    申请号:US13427567

    申请日:2012-03-22

    IPC分类号: H01L31/0224 H01L31/0376

    摘要: The present invention discloses a thin-film solar cell, which comprises an electrode layer and a semiconductor layer. The semiconductor layer comprises a P-type layer, an I-type layer and an N-type layer. The P-type layer is disposed on the electrode layer. The I-type layer comprises an I-type amorphous silicon layer and an I-type polymorphous silicon layer. The I-type amorphous silicon layer is disposed on the P-type layer. The I-type polymorphous silicon layer is disposed on the I-type amorphous silicon layer. The N-type layer is disposed on the I-type polymorphous silicon layer. Wherein, the I-type polymorphous silicon layer generates a crystalline diffraction event and reduces photolysis reaction for enhancing the conversion efficiency of the thin-film solar cell.

    摘要翻译: 本发明公开了一种薄膜太阳能电池,其包括电极层和半导体层。 半导体层包括P型层,I型层和N型层。 P型层设置在电极层上。 I型层包括I型非晶硅层和I型多晶硅层。 I型非晶硅层设置在P型层上。 I型多晶硅层设置在I型非晶硅层上。 N型层设置在I型多晶硅层上。 其中,I型多晶硅层产生晶体衍射事件并减少光解反应,以提高薄膜太阳能电池的转换效率。