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公开(公告)号：US20190043897A1
公开(公告)日：2019-02-07
申请号：US16023840
申请日：2018-06-29
发明人： Maokun TIAN , Wei SHEN , Zhonghao HUANG , Zhaojun WANG , Dalong MAO
IPC分类号： H01L27/12
摘要： The present disclosure describes a method for fabricating an array substrate, an array substrate, and a display device. The method includes the following steps: forming a gate electrode on a substrate; forming a gate insulating layer on a side of the gate electrode distal to the substrate; and forming an active layer and a source-drain metal sequentially on a side of the gate insulating layer distal to the gate electrode; forming a protection layer for the source-drain metal on a side of the source-drain metal distal to the gate insulating layer; and etching portion of the source-drain metal corresponding to the channel region to form a source electrode and a drain electrode.
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公开(公告)号：US20190187505A1
公开(公告)日：2019-06-20
申请号：US16322793
申请日：2018-05-10
发明人： Wei SHEN , Yongliang ZHAO , Xu WU , Houfeng ZHOU , Zhiyong NING
IPC分类号： G02F1/1362 , H01L27/092 , H01L27/12 , H01L29/66 , H01L29/786
CPC分类号： G02F1/13624 , G02F2001/136245 , H01L27/092 , H01L27/124 , H01L29/41733 , H01L29/66742 , H01L29/786
摘要： A thin film transistor, a controlling method thereof, an array substrate and a display device. The thin film transistor includes: a substrate; and a gate electrode, an active layer, a source and a drain on the substrate. The source comprises two source electrodes electrically connected with each other; the drain comprises two drain electrodes electrically connected with each other, and the two drain electrodes are between the two source electrodes; and the active layer comprises primary channels between adjacent source electrodes and drain electrodes and a secondary channel between the two drain electrodes.
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