公开(公告)号：US10050190B2

公开(公告)日：2018-08-14

申请号：US15464564

申请日：2017-03-21

Applicant: CONSORZIO DELTA TI RESEARCH

Inventor： Danilo Mascolo ,  Antonietta Buosciolo ,  Giuseppe Latessa ,  Georg Pucker ,  Mher Ghulinyan ,  Simone Di Marco

IPC: H01L35/30 ,  H01L35/32 ,  H01L35/22 ,  H01L35/34

Abstract: An enhanced electrical yield is achieved with an integrated thermoelectric generator (iTEG) of out-of-plane heat flux configuration on a substrate wafer having hill-top junction metal contacts and valley-bottom junction metal contacts joining juxtaposed ends of segments, alternately p-doped and n-doped, of defined thin film lines of segments of a polycrystalline semiconductor, extending over inclined opposite flanks of hills of a material of lower thermal conductivity than the thermal conductivity of the thermoelectrically active polycrystalline semiconductor, by keeping void the valleys spaces (V) among the hills and delimited at the top by a planar electrically non conductive cover with metal bond pads defined over the coupling surface, adapted to bond with respective hill-top junction metal contacts. The junction metal contacts have a cross sectional profile of low aspect ratio, with two arms or wings overlapping the juxtaposed end portions of the segments. Preferably the inner void is evacuated upon packaging the iTEG.