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公开(公告)号：US10388845B2
公开(公告)日：2019-08-20
申请号：US15769092
申请日：2016-10-20
Applicant: CONSORZIO DELTA TI RESEARCH
Inventor： Danilo Mascolo , Antonietta Buosciolo , Giuseppe Latessa , Giuseppe Gammariello , Marco Giusti , Italo Gison
Abstract: A thermoelectric generator of compact size, having a simple structure configured for increasing the conversion efficiency of thermal energy into electric energy, so as it is possible to transform into electric current also as amount of heat per unit surface greater than thin film prior art devices, has a base silicon wafer and a cover silicon wafer, wherein the cover silicon wafer is facing said base silicon wafer in such a way that the respective top contacts are in contact and the space between the cover silicon wafer and the base silicon wafer is a space in which vacuum is made or a gas is present, in particular air.
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公开(公告)号：US10050190B2
公开(公告)日：2018-08-14
申请号：US15464564
申请日：2017-03-21
Applicant: CONSORZIO DELTA TI RESEARCH
Inventor： Danilo Mascolo , Antonietta Buosciolo , Giuseppe Latessa , Georg Pucker , Mher Ghulinyan , Simone Di Marco
Abstract: An enhanced electrical yield is achieved with an integrated thermoelectric generator (iTEG) of out-of-plane heat flux configuration on a substrate wafer having hill-top junction metal contacts and valley-bottom junction metal contacts joining juxtaposed ends of segments, alternately p-doped and n-doped, of defined thin film lines of segments of a polycrystalline semiconductor, extending over inclined opposite flanks of hills of a material of lower thermal conductivity than the thermal conductivity of the thermoelectrically active polycrystalline semiconductor, by keeping void the valleys spaces (V) among the hills and delimited at the top by a planar electrically non conductive cover with metal bond pads defined over the coupling surface, adapted to bond with respective hill-top junction metal contacts. The junction metal contacts have a cross sectional profile of low aspect ratio, with two arms or wings overlapping the juxtaposed end portions of the segments. Preferably the inner void is evacuated upon packaging the iTEG.
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3.发明授权公开(公告)号：US10003002B2
公开(公告)日：2018-06-19
申请号：US15464987
申请日：2017-03-21
Applicant: Consorzio Delta Ti Research
Inventor： Danilo Mascolo , Antonietta Buosciolo , Italo Gison , Giuseppe Gammariello
Abstract: Disclosed are two geometrically identical integrated Z-device structures, integrated in two distinct silicon dices, joined together in a face-to-face configuration, such that a p-doped thin film leg of one structure faces toward a n-doped thin film leg of the other structure and vice versa. Upon joining the Z-device structures together, the hill-top metal contacts of one integrated structure are bonded in electrical and thermal continuity with correspondent hill-top metal contacts of the other integrated structure, forming a substantially bivalve TEG of increased power yield for the same footprint area and having an enhanced conversion efficiency. Thermo-electrically generated current may be gathered from one or several end pad pairs, the pads of which are connected to respective valley bottom contacts, on one and on the other of the two dices of the bivalve device, at the ends of conductive lines of micro cells respectively belonging to one and to the other of the two coupled dices.
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公开(公告)号：US09997691B2
公开(公告)日：2018-06-12
申请号：US15470273
申请日：2017-03-27
Applicant: CONSORZIO DELTA TI RESEARCH
Inventor： Danilo Mascolo , Giuseppe Latessa , Simone Di Marco , Marco Giusti
Abstract: Dices of integrated Z-device structures on a substrate wafer of a 3D integrated thermo-electric generator (iTEG) may be stacked in a tri-dimensional heterogeneous integration mode, without or with interposer wafer dices, in coherent thermal coupling among them. Through silicon vias (TSVs) holes through the thickness of the semiconductor crystal of substrate of the dices of integrated Z-device structures in geometrical projection correspondence with valley bottom metal junction contacts, and through silicon vias (TSVs) holes through the thickness of the semiconductor crystal of interposer dices, in geometrical projection correspondence with the hill-top metal junction contacts of the coupled Z-device structures, have a copper or other good heat conductor filler, form low thermal resistance heat conduction paths through the stacked Z-device structures. Thermoelectrically generated current is gathered from every integrated Z-device of a multi-tier iTEG operating in an out-of-plane heat flux configuration.
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