公开(公告)号：US09828285B2

公开(公告)日：2017-11-28

申请号：US14971163

申请日：2015-12-16

Applicant: CORNING INCORPORATED

Inventor： Benedict Yorke Johnson ,  Xinyuan Liu ,  Prantik Mazumder ,  Kamal Kishore Soni ,  Tonglai Chen ,  Miriam Marchena ,  Valerio Pruneri

IPC: H01L21/302 ,  C03C15/00 ,  C03C17/22 ,  C03C17/00 ,  C01B31/04

CPC classification number: C03C15/00 ,  C01B32/194 ,  C03C17/002 ,  C03C17/22 ,  C03C2218/31

Abstract: Described herein are methods for improved transfer of graphene from formation substrates to target substrates. In particular, the methods described herein are useful in the transfer of high-quality chemical vapor deposition-grown monolayers of graphene from metal, e.g., copper, formation substrates to ultrathin, flexible glass targets. The improved processes provide graphene materials with less defects in the structure.