专利检索 ap:("CRYSTAL IS, INC.") AND inv:"Shiwen Liu" 第 1 页

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发明申请
THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS 审中-公开

公开(公告)号：US20200058491A1

公开(公告)日：2020-02-20

申请号：US16558638

申请日：2019-09-03

申请人： CRYSTAL IS, INC.

发明人： James R. Grandusky , Leo J. Schowalter , Shawn R. Gibb , Joseph A. Smart , Shiwen Liu

IPC分类号： H01L21/02 , H01L33/12

摘要： In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.