公开(公告)号：US20170011957A1

公开(公告)日：2017-01-12

申请号：US15119289

申请日：2015-04-29

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Zhiyong WANG ,  Dejin WANG ,  Jingjing MA

IPC: H01L21/768 ,  H01L27/12 ,  H01L23/528 ,  H01L21/02 ,  H01L23/532

CPC classification number: H01L21/76834 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/76801 ,  H01L23/5283 ,  H01L23/53295 ,  H01L27/1248 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is an intermetallic dielectric layer structure of a silicon-on-insulator device, comprising a silicon-rich oxide layer (54) covering a metal interconnect, a fluorine-silicon glass layer on the silicon-rich oxide layer, and a non-doped silicate glass layer on the fluorine-silicon glass layer; the thickness of the silicon-rich oxide layer (54) is 700 angstroms ±10%; the silicon-rich oxide layer having a greater thickness captures movable ions on an unsaturated bond, such that it is difficult for the movable ions to pass through the silicon-rich oxide layer, thus blocking the movable ions. The present invention has good performance in an integrity evaluation of the gate oxide layer, and avoids damage to the device caused by the aggregation of movable ions at an interface. Also provided are a silicon-on-insulator device and a method of manufacturing the intermetallic dielectric layer of the silicon-on-insulator device.

Abstract translation: 提供一种绝缘体上硅器件的金属间介电层结构，其包括覆盖金属互连的富硅氧化物层（54），富硅氧化物层上的氟硅玻璃层和非掺杂氧化物层 氟硅玻璃层上的硅酸盐玻璃层; 富硅氧化物层（54）的厚度为700埃±10％; 具有较大厚度的富硅氧化物层捕获不饱和键上的可移动离子，使得可移动离子难以通过富硅氧化物层，从而阻挡可移动离子。 本发明在栅极氧化物层的完整性评价中具有良好的性能，并且避免了由界面处的可移动离子聚集引起的器件损坏。 还提供了绝缘体上硅器件和制造绝缘体上硅器件的金属间介电层的方法。