公开(公告)号：US20180134548A1

公开(公告)日：2018-05-17

申请号：US15573280

申请日：2016-05-10

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Errong JING

IPC: B81C1/00 ,  G01J5/20

CPC classification number: B81C1/00182 ,  B81B7/02 ,  B81C1/00 ,  B81C1/00476 ,  B81C2201/0108 ,  B81C2201/0109 ,  B81C2201/0132 ,  G01J5/20

Abstract: An MEMS double-layer suspension microstructure manufacturing method, comprising: providing a substrate (100); forming a first dielectric layer (200) on the substrate (100); patterning the first dielectric layer (200) to prepare a first film body (210) and a cantilever beam (220) connected to the first film body (210); forming a sacrificial layer (300) on the first dielectric layer (200); patterning the sacrificial layer (300) located on the first film body (210) to make a recess portioned portion (310) for forming a support structure (420), with the first film body (210) being exposed at the bottom of the recess portioned portion (310); forming a second dielectric layer (400) on the sacrificial layer (300); patterning the second dielectric layer (400) to make the second film body (410) and the support structure (420), with the support structure (420) being connected to the first film body (210) and the second film body (410); and removing part of the substrate under the first film body (210) and removing the sacrificial layer (300) to obtain the MEMS double-layer suspension microstructure. In addition, an MEMS infrared detector is also disclosed.