公开(公告)号：US20240282765A1

公开(公告)日：2024-08-22

申请号：US18567101

申请日：2022-06-15

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Lu HUANG ,  Yong HUANG ,  Yan YAN ,  Wanyi ZHOU ,  Lin WU ,  Cheng ZHOU ,  Haili SHI

IPC: H01L27/02 ,  H01L29/74

CPC classification number: H01L27/0262 ,  H01L27/0274 ,  H01L29/7436

Abstract: The present disclosure provides a GGNMOS transistor structure, an ESD protection device, and an ESD protection circuit. The GGNMOS transistor structure can increase a capability of the ESD protection device to discharge an ESD current per unit size under the action of a P-N-P-N parasitic thyristor formed by an N-potential well, a P-type heavily doped region, and an N-type heavily doped region; the GGNMOS transistor structure can limit a transient peak current of ESD under the action of an equivalent resistor formed by an N-potential well, so that respective GGNMOS transistors of the ESD protection device can conduct uniformly, improving the reliability of the ESD protection circuit.