公开(公告)号：US20220037211A1

公开(公告)日：2022-02-03

申请号：US17299380

申请日：2019-12-04

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Yuanbao LIAO

IPC: H01L21/8234 ,  H01L27/02

Abstract: The present application relates to a preparation method for a semiconductor device, comprising: sequentially forming an isolating dielectric layer and a doped semiconductor layer of a first conductivity type on a non-primitive cell area of a semiconductor substrate; performing a first conductivity type of well injection by using the semiconductor layer and the isolating dielectric layer as masks, and forming a well area in a primitive cell area; forming an operation structure in the well area, and forming a protection structure in the semiconductor layer; and forming an interlayer dielectric layer on the operation structure and the protection structure, forming a contact hole in the interlayer dielectric layer, forming a metal interconnection layer connected to the contact hole on the interlayer dielectric layer, and connecting the operation structure and the protection structure by means of the metal interconnection layer and the contact hole.