公开(公告)号：US11188700B2

公开(公告)日：2021-11-30

申请号：US17053550

申请日：2019-08-15

申请人： CSMC TECHNOLOGIES FAB2 CO., LTD.

发明人： Nan Zhang ,  Jing Zhou ,  Hao Wang ,  Zhan Gao ,  Maoqian Zhu ,  Cheng Zhou ,  Zhijin Li ,  Lin Wu ,  Shuming Guo ,  Yong Huang

IPC分类号： G06F30/367 ,  G06F30/392 ,  G06F119/06

摘要： The present application relates to a resistance simulation method for a power device, comprising: establishing an equivalent resistance model of a power device, wherein the connection relationship of N fingers is equivalent to N resistors Rb connected in parallel, input ends of adjacent resistors Rb are connected by means of a resistor Ra, output ends of adjacent resistors Rb are connected by means of a resistor Rc, R a = 1 N ⁢ R 0 , R c = 1 N ⁢ R 1 , and Rb=RDEV*N+RS+RD, wherein R0 and R1 are respectively resistances of a source metal strip and a drain metal strip, Rs is a metal resistor of a first intermediate layer connecting one source region to the source metal strip, RD is a metal resistor of a second intermediate layer connecting one drain region to the drain metal strip, and RDEV is the channel resistance of the power device; and calculating the resistance of the equivalent resistance model as the resistance of the power device.