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1.发明授权公开(公告)号：US10578975B2
公开(公告)日：2020-03-03
申请号：US16152784
申请日：2018-10-05
发明人： Thomas Thaler , Joachim Welte , Kujan Gorhad , Vladimir Dmitriev , Ute Buttgereit , Thomas Scheruebl , Yuval Perets
IPC分类号： G03F7/20
摘要： The invention relates to a method for correcting the critical dimension uniformity of a photomask for semiconductor lithography, comprising the following steps: determining a transfer coefficient as a calibration parameter, correcting the photomask by writing pixel fields, verifying the photomask corrected thus, wherein a transfer coefficient is used for verifying the corrected photomask, said transfer coefficient being obtained from a measured scattering function of pixel fields.
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2.发明申请公开(公告)号：US20190354019A1
公开(公告)日：2019-11-21
申请号：US16415510
申请日：2019-05-17
申请人： Carl Zeiss SMT GmbH
IPC分类号： G03F7/20
摘要： The present invention relates to an apparatus for analyzing an element of a photolithography process, said apparatus comprising: (a) a first measuring apparatus for recording first data of the element; and (b) means for transforming the first data into second, non-measured data, which correspond to measurement data of a measurement of the element with a second measuring apparatus; (c) wherein the means comprise a transformation model, which has been trained using a multiplicity of first data used for training purposes and second data corresponding therewith, which are linked to the second measuring apparatus.
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3.发明申请公开(公告)号：US20190107783A1
公开(公告)日：2019-04-11
申请号：US16152784
申请日：2018-10-05
发明人： Thomas Thaler , Joachim Welte , Kujan Gorhad , Vladimir Dmitriev , Ute Buttgereit , Thomas Scheruebl , Yuval Perets
IPC分类号： G03F7/20
摘要： The invention relates to a method for correcting the critical dimension uniformity of a photomask for semiconductor lithography, comprising the following steps: determining a transfer coefficient as a calibration parameter, correcting the photomask by writing pixel fields, verifying the photomask corrected thus, wherein a transfer coefficient is used for verifying the corrected photomask, said transfer coefficient being obtained from a measured scattering function of pixel fields.
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公开(公告)号：US12001145B2
公开(公告)日：2024-06-04
申请号：US16415510
申请日：2019-05-17
申请人： Carl Zeiss SMT GmbH
摘要： An apparatus for analyzing an element of a photolithography process, said apparatus comprising: (a) a first measuring apparatus for recording first data of the element; and (b) means for transforming the first data into second, non-measured data, which correspond to measurement data of a measurement of the element with a second measuring apparatus; (c) wherein the means comprise a transformation model, which has been trained using a multiplicity of first data used for training purposes and second data corresponding therewith, which are linked to the second measuring apparatus.
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5.发明授权公开(公告)号：US11079338B2
公开(公告)日：2021-08-03
申请号：US16451203
申请日：2019-06-25
申请人： Carl Zeiss SMT GmbH
发明人： Ulrich Matejka , Thomas Scheruebl , Markus Koch , Christoph Husemann , Lars Stoppe , Beat Marco Mout
IPC分类号： G01N21/956 , G01N21/33 , G01B9/02 , G03F1/84
摘要： In detecting the structure of a lithography mask, a portion of the lithography mask is firstly illuminated with illumination light of an at least partially coherent light source in the at least one preferred illumination direction. A diffraction image of the illuminated portion is then recorded by spatially resolved detection of a diffraction intensity of the illumination light diffracted from the illuminated portion in a detection plane. The steps of “illuminating” and “recording the diffraction image” are then carried out for further portions of the lithography mask. Between at least two portions of the lithography mask that are thereby detected, there is in each case an overlap region whose surface extent measures at least 5% or more of the smaller of the two portions of the lithography mask. The repetition takes place until the detected portions of the lithography mask completely cover a region of the lithography mask to be detected. The structure of the lithography mask is calculated from the recorded diffraction images of the illuminated portions. A device for carrying out the structure detection method is also specified, which comprises a light source, a spatially-resolving detector and a mask holder. This results in a method and a device for detecting the structure of a lithography mask, in which the demands placed on an optical unit arranged downstream in the beam path from the illumination light of the lithography mask are reduced.
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6.发明申请公开(公告)号：US20190391087A1
公开(公告)日：2019-12-26
申请号：US16451203
申请日：2019-06-25
申请人： Carl Zeiss SMT GmbH
发明人： Ulrich Matejka , Thomas Scheruebl , Markus Koch , Christoph Husemann , Lars Stoppe , Beat Marco Mout
IPC分类号： G01N21/956 , G01N21/33
摘要： In detecting the structure of a lithography mask, a portion of the lithography mask is firstly illuminated with illumination light of an at least partially coherent light source in the at least one preferred illumination direction. A diffraction image of the illuminated portion is then recorded by spatially resolved detection of a diffraction intensity of the illumination light diffracted from the illuminated portion in a detection plane. The steps of “illuminating” and “recording the diffraction image” are then carried out for further portions of the lithography mask. Between at least two portions of the lithography mask that are thereby detected, there is in each case an overlap region whose surface extent measures at least 5% or more of the smaller of the two portions of the lithography mask. The repetition takes place until the detected portions of the lithography mask completely cover a region of the lithography mask to be detected. The structure of the lithography mask is calculated from the recorded diffraction images of the illuminated portions. A device for carrying out the structure detection method is also specified, which comprises a light source, a spatially-resolving detector and a mask holder. This results in a method and a device for detecting the structure of a lithography mask, in which the demands placed on an optical unit arranged downstream in the beam path from the illumination light of the lithography mask are reduced.
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