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1.发明公开公开(公告)号：US20240264536A1
公开(公告)日：2024-08-08
申请号：US18612515
申请日：2024-03-21
申请人： Carl Zeiss SMT GmbH
摘要： The present invention relates to an apparatus for analyzing an element of a photolithography process, said apparatus comprising: (a) a first measuring apparatus for recording first data of the element; and (b) means for transforming the first data into second, non-measured data, which correspond to measurement data of a measurement of the element with a second measuring apparatus; (c) wherein the means comprise a transformation model, which has been trained using a multiplicity of first data used for training purposes and second data corresponding therewith, which are linked to the second measuring apparatus.
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公开(公告)号：US12001145B2
公开(公告)日：2024-06-04
申请号：US16415510
申请日：2019-05-17
申请人： Carl Zeiss SMT GmbH
摘要： An apparatus for analyzing an element of a photolithography process, said apparatus comprising: (a) a first measuring apparatus for recording first data of the element; and (b) means for transforming the first data into second, non-measured data, which correspond to measurement data of a measurement of the element with a second measuring apparatus; (c) wherein the means comprise a transformation model, which has been trained using a multiplicity of first data used for training purposes and second data corresponding therewith, which are linked to the second measuring apparatus.
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公开(公告)号：US20230196189A1
公开(公告)日：2023-06-22
申请号：US17701054
申请日：2022-03-22
申请人： Carl Zeiss SMT GmbH
发明人： Alexander Freytag , Oliver Malki , Johannes Persch , Thomas Korb , Jens Timo Neumann , Amir Avishai , Alex Buxbaum , Eugen Foca , Dmitry Klochkov
IPC分类号： G06N20/00
CPC分类号： G06N20/00
摘要： A system and a method for measuring of parameter values of semiconductor objects within wafers with increased throughput include using a modified machine learning algorithm to extract measurement results from instances of semiconductor objects. A training method for training the modified machine learning algorithm includes reducing a user interaction. The method can be more flexible and robust and can involve less user interaction than conventional methods. The system and method can be used for quantitative metrology of integrated circuits within semiconductor wafers.
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公开(公告)号：US12111579B2
公开(公告)日：2024-10-08
申请号：US18241578
申请日：2023-09-01
申请人： Carl Zeiss SMT GmbH
IPC分类号： G01J3/00 , G03F7/00 , G06F30/20 , G06N3/08 , G06N20/00 , G06T7/00 , G06V10/75 , G06V10/774 , G06V20/13
CPC分类号： G03F7/705 , G06F30/20 , G06N3/08 , G06N20/00 , G06T7/0006 , G06T7/001 , G06V10/751 , G06V10/774 , G06V20/13 , G06T2207/10032 , G06T2207/20081 , G06T2207/20084 , G06T2207/30148
摘要： The present invention relates to a method and an apparatus for determining at least one unknown effect of defects of an element of a photolithography process. The method comprises the steps of: (a) providing a model of machine learning for a relationship between an image, design data associated with the image and at least one effect of the defects of the element of the photolithography process arising from the image; (b) training the model of machine learning using a multiplicity of images used for training purposes, design data associated with the images used for training purposes and corresponding effects of the defects; and (c) determining the at least one unknown effect of the defects by applying the trained model to a measured image and the design data associated with the measured image.
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公开(公告)号：US20240087134A1
公开(公告)日：2024-03-14
申请号：US18487844
申请日：2023-10-16
申请人： Carl Zeiss SMT GmbH
发明人： Dmitry Klochkov , Jens Timo Neumann , Thomas Korb , Eno Töppe , Johannes Persch , Abhilash Srikantha , Alexander Freytag
CPC分类号： G06T7/149 , G06T7/0004 , G06T2207/10028 , G06T2207/10061 , G06T2207/10072 , G06T2207/30148
摘要： A method identifies ring structures in pillars of high aspect ratio (HAR) structures. For segmentation of rings, a machine learning-logic is used. A two-step training method for the machine learning logic is described.
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6.发明公开公开(公告)号：US20230393488A1
公开(公告)日：2023-12-07
申请号：US18206673
申请日：2023-06-07
申请人： Carl Zeiss SMT GmbH
发明人： Dirk Seidel , Alexander Freytag , Jonas Umlauft
摘要： The invention relates to a method for registering structures on microlithographic masks comprising the comparison of a recorded measurement image of a mask and the target design underlying the mask, wherein the target design underlying the mask is converted into a simulated reference image that is directly comparable with the measurement image with the aid of an optical simulation, wherein the optical simulation is fully automatically differentiable in such a manner that a metric that is determined from the recorded measurement image and the reference image simulated in the forward mode and represents the differences allows in the backward mode a representation of the actual design of the mask that is directly comparable with the target design for the purpose of determining possible defects of the mask.
The invention furthermore relates to a corresponding computer program product and to the use of the above method in the course of a microlithographic process.-
7.发明公开公开(公告)号：US20230408929A1
公开(公告)日：2023-12-21
申请号：US18241578
申请日：2023-09-01
申请人： Carl Zeiss SMT GmbH
CPC分类号： G03F7/705 , G06N20/00 , G06F30/20 , G06N3/08 , G06T7/0006 , G06T7/001 , G06V10/751 , G06V10/774 , G06V20/13 , G06T2207/10032 , G06T2207/20081 , G06T2207/20084 , G06T2207/30148
摘要： The present invention relates to a method and an apparatus for determining at least one unknown effect of defects of an element of a photolithography process. The method comprises the steps of: (a) providing a model of machine learning for a relationship between an image, design data associated with the image and at least one effect of the defects of the element of the photolithography process arising from the image; (b) training the model of machine learning using a multiplicity of images used for training purposes, design data associated with the images used for training purposes and corresponding effects of the defects; and (c) determining the at least one unknown effect of the defects by applying the trained model to a measured image and the design data associated with the measured image.
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公开(公告)号：US11774859B2
公开(公告)日：2023-10-03
申请号：US17087970
申请日：2020-11-03
申请人： Carl Zeiss SMT GmbH
CPC分类号： G03F7/705 , G06F30/20 , G06N3/08 , G06N20/00 , G06T7/001 , G06T7/0006 , G06V10/751 , G06V10/774 , G06V20/13 , G06T2207/10032 , G06T2207/20081 , G06T2207/20084 , G06T2207/30148
摘要： The present invention relates to a method and an apparatus for determining at least one unknown effect of defects of an element of a photolithography process. The method comprises the steps of: (a) providing a model of machine learning for a relationship between an image, design data associated with the image and at least one effect of the defects of the element of the photolithography process arising from the image; (b) training the model of machine learning using a multiplicity of images used for training purposes, design data associated with the images used for training purposes and corresponding effects of the defects; and (c) determining the at least one unknown effect of the defects by applying the trained model to a measured image and the design data associated with the measured image.
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公开(公告)号：US20210158215A1
公开(公告)日：2021-05-27
申请号：US17140250
申请日：2021-01-04
申请人： Carl Zeiss SMT GmbH
发明人： Dirk Seidel , Alexander Freytag , Christian Wojek , Susanne Töpfer , Carsten Schmidt , Christoph Husemann
摘要： The present invention relates to a method for evaluating a statistically distributed measured value in the examination of an element for a photolithography process, comprising the following steps: (a) using a plurality of parameters in a trained machine learning model, wherein the parameters characterize a state of a measurement environment in a time period assigned to a measurement of the measured value; and (b) executing the trained machine learning model in order to evaluate the measured value.
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10.发明申请公开(公告)号：US20190354019A1
公开(公告)日：2019-11-21
申请号：US16415510
申请日：2019-05-17
申请人： Carl Zeiss SMT GmbH
IPC分类号： G03F7/20
摘要： The present invention relates to an apparatus for analyzing an element of a photolithography process, said apparatus comprising: (a) a first measuring apparatus for recording first data of the element; and (b) means for transforming the first data into second, non-measured data, which correspond to measurement data of a measurement of the element with a second measuring apparatus; (c) wherein the means comprise a transformation model, which has been trained using a multiplicity of first data used for training purposes and second data corresponding therewith, which are linked to the second measuring apparatus.
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