Method for monitoring a CMP polishing method and arrangement for a CMP polishing method
    1.
    发明申请
    Method for monitoring a CMP polishing method and arrangement for a CMP polishing method 审中-公开
    CMP抛光方法的监测方法和CMP抛光方法的布置方法

    公开(公告)号:US20060141907A1

    公开(公告)日:2006-06-29

    申请号:US11291067

    申请日:2005-12-01

    IPC分类号: B24B49/00 B24B7/30

    摘要: The invention relates to a method for monitoring a CMP polishing method, a substrate being fixed in a mount, a polishing pad being fixed on a plate, a surface of the polishing pad being operatively connected to a surface of the substrate, the polishing pad and the substrate being moved relative to one another, so that material is removed from the surface of the substrate. A measuring device is provided, which is operatively connected to the surface of the polishing pad, the measuring device detecting the surface constitution of the polishing pad and generating a measurement signal dependent on the surface constitution of the polishing pad. The measurement signal is compared with corresponding reference values for the purpose of identifying a change in the material of the surface of the substrate during the CMP polishing method.

    摘要翻译: 本发明涉及一种用于监测CMP抛光方法的方法,一种固定在底座中的基板,一个固定在板上的抛光垫,该抛光垫的表面可操作地连接到该基板的表面,该抛光垫和 衬底相对于彼此移动,使得材料从衬底的表面移除。 提供测量装置,其可操作地连接到抛光垫的表面,测量装置检测抛光垫的表面结构,并产生取决于抛光垫的表面结构的测量信号。 将测量信号与相应的参考值进行比较,以便在CMP抛光方法中识别基板表面的材料的变化。