公开(公告)号：US09620502B2

公开(公告)日：2017-04-11

申请号：US14178480

申请日：2014-02-12

申请人： Chan-Hee Jeon ,  Eun-Kyoung Kwon ,  Il-Ryong Kim ,  Han-Gu Kim ,  Woo-Jin Seo ,  Ki-Tae Lee

发明人： Chan-Hee Jeon ,  Eun-Kyoung Kwon ,  Il-Ryong Kim ,  Han-Gu Kim ,  Woo-Jin Seo ,  Ki-Tae Lee

IPC分类号： H01L27/088 ,  H01L29/66 ,  H01L27/11

CPC分类号： H01L21/823814 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/266 ,  H01L21/76805 ,  H01L21/76895 ,  H01L21/823821 ,  H01L21/823871 ,  H01L23/535 ,  H01L27/0288 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848

摘要： In one embodiment, the semiconductor device includes at least one active fin protruding from a substrate, a first gate electrode crossing the active fin, and a first impurity region formed on the active fin at a first side of the first gate electrode. At least a portion of the first impurity region is formed in a first epitaxial layer portion on the active fin. A second impurity region is formed on the active fin at a second side of the first gate electrode. The second impurity region has at least a portion not formed in an epitaxial layer.