公开(公告)号：US20150109354A1

公开(公告)日：2015-04-23

申请号：US14172507

申请日：2014-02-04

Applicant: Chang Woon KIM ,  Kwang Jin LEE

Inventor： Chang Woon KIM ,  Kwang Jin LEE

IPC: G09G3/20

CPC classification number: G09G3/2003 ,  G09G2310/027 ,  G09G2310/0289 ,  G09G2310/0291

Abstract: A data driver is disclosed. The data driver includes a first latch unit including a plurality of first latches configured to store data, a selector configured to select and/or output data in two or more first latches, a level shifter unit configured to convert a voltage level of the data in the two or more selected first latches and output the voltage level-converted data, and a second latch unit including a plurality of second latches configured to store the voltage level-converted data.

Abstract translation: 公开了一种数据驱动器。 数据驱动器包括：第一锁存单元，包括被配置为存储数据的多个第一锁存器，被配置为在两个或更多个第一锁存器中选择和/或输出数据的选择器;电平移位器单元，被配置为将数据的电压电平 两个或多个选择的第一锁存器并输出电压电平转换数据，以及第二锁存单元，包括被配置为存储电压电平转换数据的多个第二锁存器。

公开(公告)号：US20110222330A1

公开(公告)日：2011-09-15

申请号：US13032848

申请日：2011-02-23

Applicant: Yong-Jun LEE ,  Kwang Jin LEE ,  Joon Min PARK ,  Huik Won SEO

Inventor： Yong-Jun LEE ,  Kwang Jin LEE ,  Joon Min PARK ,  Huik Won SEO

IPC: G11C17/00 ,  G11C11/00

CPC classification number: G11C17/18 ,  G11C11/005 ,  G11C13/0004 ,  G11C13/0059 ,  G11C2211/5641 ,  G11C2211/5646

Abstract: A nonvolatile memory device comprises a one-time-programmable (OTP) lock bit register. The nonvolatile memory device comprises a variable-resistance memory cell array comprising an OTP block that store data and a register that stores OTP lock state information indicating whether the data is changeable. The register comprises a variable memory cell. An initial value of the OTP lock state information is set to a program protection state.

Abstract translation: 非易失性存储器件包括一次性可编程（OTP）锁定位寄存器。 非易失性存储器件包括可变电阻存储单元阵列，其包括存储数据的OTP块和存储指示数据是否可更改的OTP锁定状态信息的寄存器。 寄存器包括可变存储单元。 OTP锁定状态信息的初始值被设置为程序保护状态。