公开(公告)号：US06403435B1

公开(公告)日：2002-06-11

申请号：US09722518

申请日：2000-11-28

申请人： Chang Yong Kang ,  Myoung Kyu Park

发明人： Chang Yong Kang ,  Myoung Kyu Park

IPC分类号： H01L21331

CPC分类号： H01L27/10894 ,  H01L21/76202 ,  H01L21/76224 ,  H01L27/10873 ,  H01L27/1203

摘要： A semiconductor device having a recessed silicon on insulator (SOI) structure includes an SOI substrate having a cell region, a peripheral region and a field region, the SOI substrate having a first semiconductor layer, an insulating layer on the first semiconductor layer, and a second semiconductor layer on the insulating layer, a trench in the field region of the second semiconductor layer, a device isolation film within the trench, a peripheral region recessed in the second semiconductor layer, and an active semiconductor device on the cell region and the peripheral region of the second semiconductor layer.

摘要翻译： 具有凹陷绝缘体（SOI）结构的半导体器件包括具有单元区域，外围区域和场区域的SOI衬底，所述SOI衬底具有第一半导体层，第一半导体层上的绝缘层和 绝缘层上的第二半导体层，第二半导体层的场区域中的沟槽，沟槽内的器件隔离膜，凹陷在第二半导体层中的外围区域，以及在单元区域和外围区域上的有源半导体器件 第二半导体层的区域。

公开(公告)号：US06410405B1

公开(公告)日：2002-06-25

申请号：US09895411

申请日：2001-07-02

申请人： Myoung Kyu Park

发明人： Myoung Kyu Park

IPC分类号： H01L21336

摘要： The present invention provides a method for forming a field oxide film on a semiconductor device. In particular, the present invention provides a method for forming a field oxide film on a semiconductor device using a silicon epitaxial layer to improve a Shallow Trench Isolation (STI) process.