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公开(公告)号：US06928746B2
公开(公告)日：2005-08-16
申请号：US10367080
申请日：2003-02-14
CPC分类号： B81C1/00 , B81C2201/117 , G03F7/40
摘要： A method for drying an object, having a polymeric film, wherein the object is submerged in a rinse liquid. The object is removed from the rinse liquid and the object is placed in a solvent bath before a sufficient amount of the rinse liquid can evaporate from the object. The density of a solvent in the solvent bath depends on a direction of orientation of the polymeric film with respect to a force. The object is removed from the solvent bath. A drying process is performed.
摘要翻译： 一种用于干燥具有聚合物膜的物体的方法，其中物体浸没在漂洗液体中。 将物体从冲洗液体中取出，并且将物体放置在溶剂浴中，在足够量的冲洗液体可以从物体蒸发之前。 溶剂浴中溶剂的密度取决于聚合物膜相对于力的取向方向。 将物体从溶剂浴中取出。 进行干燥处理。
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公开(公告)号：US07044662B2
公开(公告)日：2006-05-16
申请号：US10911085
申请日：2004-08-03
IPC分类号： G03D5/00
摘要： An apparatus for developing a polymeric film without the need for a water rinse step is disclosed. An object having a surface supporting a polymeric film is placed onto a support region within a pressure chamber of the apparatus. A fluid and developer is introduced into the pressure chamber and the object is processed at supercritical conditions to develop the polymeric film such that the polymeric film is not substantially deformed. The pressure chamber is then vented.
摘要翻译： 公开了一种用于显影聚合物膜而不需要水冲洗步骤的装置。 具有支撑聚合物膜的表面的物体被放置在设备的压力室内的支撑区域上。 将流体和显影剂引入压力室中，并且物体在超临界条件下进行处理以开发聚合物膜，使得聚合物膜基本上不变形。 然后将压力室排气。
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公开(公告)号：US06924086B1
公开(公告)日：2005-08-02
申请号：US10367078
申请日：2003-02-14
摘要： A method of developing a polymeric film without the need for a water rinse step. An object having a surface supporting a polymeric film is placed onto a support region within a pressure chamber. A fluid and developer is introduced into the pressure chamber and the object is processed at supercritical conditions to develop the polymeric film such that the polymeric film is not substantially deformed. The pressure chamber is then vented.
摘要翻译： 一种在不需要水冲洗步骤的情况下开发聚合物膜的方法。 具有支撑聚合物膜的表面的物体被放置在压力室内的支撑区域上。 将流体和显影剂引入压力室中，并且物体在超临界条件下进行处理以开发聚合物膜，使得聚合物膜基本上不变形。 然后将压力室排气。
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公开(公告)号：US20080099463A1
公开(公告)日：2008-05-01
申请号：US11537096
申请日：2006-09-29
申请人： Nicholas Alan Ryza
发明人： Nicholas Alan Ryza
IPC分类号： H05B3/68
CPC分类号： H05B3/68 , H01L21/67109
摘要： A method and processing system for controlling and rapidly lowering the temperature of a hotplate used for supporting and heat-treating wafers. The method includes maintaining the hotplate at a first hotplate temperature by applying a first heating power to the hotplate and heat-treating a wafer on an upper surface of the hotplate, removing the heat-treated wafer from the upper surface, exposing the upper surface to an inert gas stream for rapid cool down of the hotplate from the first hotplate temperature to a second hotplate temperature, and maintaining the hotplate at the second hotplate temperature by applying a second heating power to the hotplate and heat-treating another wafer on the upper surface of the hotplate.
摘要翻译： 一种用于控制和快速降低用于支撑和热处理晶片的加热板的温度的方法和处理系统。 该方法包括通过向加热板施加第一加热功率并对加热板的上表面上的晶片进行热处理，将热板保持在第一加热板温度，从上表面去除热处理的晶片，将上表面暴露于 用于将热板从第一电炉温度快速冷却至第二加热板温度的惰性气流，并且通过向加热板施加第二加热功率并将上述热表面上的另一个晶片加热处理来将该热板保持在第二加热板温度 的电热板。
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