Polycrystalline selenium imaging devices
    1.
    发明授权
    Polycrystalline selenium imaging devices 失效
    多晶硒成像装置

    公开(公告)号:US4132918A

    公开(公告)日:1979-01-02

    申请号:US613059

    申请日:1975-09-15

    CPC分类号: G03G5/08207 G03G5/0433

    摘要: A low dark current vidicon is disclosed having a target comprising a thallium doped layer of hexagonal, or trigonal, polycrystalline selenium. A mechanically stable blocking contact for holes is also provided by a transparent tin oxide electrode in intimate proximity to the layer along a major surface of a faceplate in contact with the target.

    摘要翻译: 公开了一种低暗电流摄像机,其具有包含六方晶或三角多晶硒的铊掺杂层的靶。 用于孔的机械稳定的阻挡接触也由透明的氧化锡电极提供,所述透明氧化锡电极沿着与靶接触的面板的主表面紧密地附近。