公开(公告)号：US12191226B2

公开(公告)日：2025-01-07

申请号：US18155322

申请日：2023-01-17

Applicant: MEDIATEK INC. ,  Chee-Wee Liu

Inventor： Ming-Tzong Yang ,  Hsien-Hsin Lin ,  Wen-Kai Wan ,  Chia-Che Chung ,  Chee-Wee Liu

IPC: H01L23/373 ,  H01L21/768 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device and method for forming same. According to an embodiment. The method provides a base substrate, forms a heat dissipation substrate on the base substrate, wherein a thermal conductivity of the heat dissipation substrate is between 200 Wm−1K−1 and 1200 Wm−1K−1. This method further forms a device layer on the heat dissipation substrate, wherein the device layer comprises a transistor. The method further removes the base substrate.

公开(公告)号：US20220059429A1

公开(公告)日：2022-02-24

申请号：US17133896

申请日：2020-12-24

Applicant: Chee-Wee LIU ,  MEDIATEK INC.

Inventor： Ming-Tzong Yang ,  Hsien-Hsin Lin ,  Wen-Kai Wan ,  Chia-Che Chung ,  Chee-Wee Liu

IPC: H01L23/373 ,  H01L21/768 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a heat dissipation substrate and a device layer. The thermal conductivity of the heat dissipation substrate is greater than 200 Wm−1K−1and the device layer is disposed on the heat dissipation substrate. The device layer includes a transistor.

公开(公告)号：US11587846B2

公开(公告)日：2023-02-21

申请号：US17133896

申请日：2020-12-24

Applicant: MEDIATEK INC. ,  Chee-Wee Liu

Inventor： Ming-Tzong Yang ,  Hsien-Hsin Lin ,  Wen-Kai Wan ,  Chia-Che Chung ,  Chee-Wee Liu

IPC: H01L23/373 ,  H01L21/768 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a heat dissipation substrate and a device layer. The thermal conductivity of the heat dissipation substrate is greater than 200 Wm−1K−1 and the device layer is disposed on the heat dissipation substrate. The device layer includes a transistor. A method of forming a semiconductor device includes providing a base substrate, forming a heat dissipation substrate on the base substrate, wherein a thermal conductivity of the heat dissipation substrate is greater than 200 Wm−1K−1. The method further includes forming a device layer on the heat dissipation substrate, wherein the device layer comprises a transistor. The method further includes removing the base substrate.