公开(公告)号：US20130176074A1

公开(公告)日：2013-07-11

申请号：US13345022

申请日：2012-01-06

Applicant: Chen Chih-Sheng

Inventor： Chen Chih-Sheng

IPC: G05F3/00

CPC classification number: H03K17/007 ,  H03K17/693

Abstract: An auxiliary voltage generating unit for a radio frequency switch includes a first input and a second input respectively configured to receive a first control signal and a second control signal, wherein the first control signal and the second control signal are configured to control which one of a plurality of paths in the radio frequency switch is enabled, and at least one output, configured to output an auxiliary voltage, derived from at least one of the first control signal or the second control signal, that is used to operate the radio frequency switch. The auxiliary voltage may be a bias voltage and/or a voltage used to power an inverter used to enable a selected branch as an isolation branch or shunt branch.

Abstract translation: 一种用于无线电频率开关的辅助电压产生单元包括分别被配置为接收第一控制信号和第二控制信号的第一输入端和第二输入端，其中第一控制信号和第二控制信号被配置为控制第一控制信号和第二控制信号中的哪一个 射频切换中的多个路径被使能，并且至少一个输出被配置为输出从用于操作射频开关的第一控制信号或第二控制信号中的至少一个导出的辅助电压。 辅助电压可以是用于给逆变器供电的偏压和/或电压，所述逆变器用于使所选择的分支作为隔离分支或分流支路。

公开(公告)号：US20140062218A1

公开(公告)日：2014-03-06

申请号：US13597611

申请日：2012-08-29

Applicant: Chen Chih-Sheng

Inventor： Chen Chih-Sheng

IPC: H03H11/02

CPC classification number: H03K17/693

Abstract: A radio frequency (RF) switch includes a common port, a first port, and a second port, a first semiconductor switching element disposed in a first RF pathway between the common port and the first port, a second semiconductor switching element disposed in a second RF pathway between the common port and the second port, a first pair of direct current (DC) blocking capacitors disposed to isolate the first semiconductor switching element in the first RF pathway, and a second pair of DC blocking capacitors disposed to isolate the second semiconductor switching element in the second RF pathway. The respective pairs of DC blocking capacitors allow for different bias voltages to be applied to the respective RF pathways. A charge-discharge circuit may also be employed to decrease transient switching time of the RF switch.

Abstract translation: 射频（RF）开关包括公共端口，第一端口和第二端口，设置在公共端口和第一端口之间的第一RF路径中的第一半导体开关元件，设置在第二端口中的第二半导体开关元件 公共端口和第二端口之间的RF路径，被设置为隔离第一RF路径中的第一半导体开关元件的第一对直流（DC）阻塞电容器和设置成隔离第二半导体的第二对隔离电容器 开关元件在第二RF通路中。 各对隔直电容器允许将不同的偏置电压施加到相应的RF通路。 也可以采用充放电电路来减少RF开关的瞬时切换时间。

公开(公告)号：US08854111B2

公开(公告)日：2014-10-07

申请号：US13597623

申请日：2012-08-29

Applicant: Chen Chih-Sheng

Inventor： Chen Chih-Sheng

IPC: H03K17/687

CPC classification number: H03K17/693

Abstract: A radio frequency (RF) switch includes a common port, a first port, and a second port, a first semiconductor switching element disposed in a first RF pathway between the common port and the first port, a second semiconductor switching element disposed in a second RF pathway between the common port and the second port, a first pair of direct current (DC) blocking capacitors disposed to isolate the first semiconductor switching element in the first RF pathway, and a second pair of DC blocking capacitors disposed to isolate the second semiconductor switching element in the second RF pathway. The respective pairs of DC blocking capacitors allow for different bias voltages to be applied to the respective RF pathways. A charge-discharge circuit may also be employed to decrease transient switching time of the RF switch.

Abstract translation: 射频（RF）开关包括公共端口，第一端口和第二端口，设置在公共端口和第一端口之间的第一RF路径中的第一半导体开关元件，设置在第二端口中的第二半导体开关元件 公共端口和第二端口之间的RF路径，被设置为隔离第一RF路径中的第一半导体开关元件的第一对直流（DC）阻塞电容器和设置成隔离第二半导体的第二对隔离电容器 开关元件在第二RF通路中。 各对隔直电容器允许将不同的偏置电压施加到相应的RF通路。 也可以采用充放电电路来减少RF开关的瞬时切换时间。

公开(公告)号：US08847666B2

公开(公告)日：2014-09-30

申请号：US13597611

申请日：2012-08-29

Applicant: Chen Chih-Sheng

Inventor： Chen Chih-Sheng

IPC: H03K17/687

CPC classification number: H03K17/693

Abstract: A radio frequency (RF) switch includes a common port, a first port, and a second port, a first semiconductor switching element disposed in a first RF pathway between the common port and the first port, a second semiconductor switching element disposed in a second RF pathway between the common port and the second port, a first pair of direct current (DC) blocking capacitors disposed to isolate the first semiconductor switching element in the first RF pathway, and a second pair of DC blocking capacitors disposed to isolate the second semiconductor switching element in the second RF pathway. The respective pairs of DC blocking capacitors allow for different bias voltages to be applied to the respective RF pathways. A charge-discharge circuit may also be employed to decrease transient switching time of the RF switch.

Abstract translation: 射频（RF）开关包括公共端口，第一端口和第二端口，设置在公共端口和第一端口之间的第一RF路径中的第一半导体开关元件，设置在第二端口中的第二半导体开关元件 公共端口和第二端口之间的RF路径，被设置为隔离第一RF路径中的第一半导体开关元件的第一对直流（DC）阻塞电容器和设置成隔离第二半导体的第二对隔离电容器 开关元件在第二RF通路中。 各对隔直电容器允许将不同的偏置电压施加到相应的RF通路。 也可以采用充放电电路来减少RF开关的瞬时切换时间。

公开(公告)号：US09231578B2

公开(公告)日：2016-01-05

申请号：US13345022

申请日：2012-01-06

Applicant: Chen Chih-Sheng

Inventor： Chen Chih-Sheng

IPC: H03K17/687 ,  H03K17/60 ,  G11C5/14 ,  H03K17/00 ,  H03K17/693

CPC classification number: H03K17/007 ,  H03K17/693

Abstract: An auxiliary voltage generating unit for a radio frequency switch includes a first input and a second input respectively configured to receive a first control signal and a second control signal, wherein the first control signal and the second control signal are configured to control which one of a plurality of paths in the radio frequency switch is enabled, and at least one output, configured to output an auxiliary voltage, derived from at least one of the first control signal or the second control signal, that is used to operate the radio frequency switch. The auxiliary voltage may be a bias voltage and/or a voltage used to power an inverter used to enable a selected branch as an isolation branch or shunt branch.

Abstract translation: 一种用于无线电频率开关的辅助电压产生单元包括分别被配置为接收第一控制信号和第二控制信号的第一输入端和第二输入端，其中第一控制信号和第二控制信号被配置为控制第一控制信号和第二控制信号中的哪一个 射频切换中的多个路径被使能，并且至少一个输出被配置为输出从用于操作射频开关的第一控制信号或第二控制信号中的至少一个导出的辅助电压。 辅助电压可以是用于给逆变器供电的偏压和/或电压，所述逆变器用于使所选择的分支作为隔离分支或分流支路。

公开(公告)号：US20140062577A1

公开(公告)日：2014-03-06

申请号：US13597623

申请日：2012-08-29

Applicant: Chen Chih-Sheng

Inventor： Chen Chih-Sheng

IPC: H03K17/687

CPC classification number: H03K17/693

Abstract: A radio frequency (RF) switch includes a common port, a first port, and a second port, a first semiconductor switching element disposed in a first RF pathway between the common port and the first port, a second semiconductor switching element disposed in a second RF pathway between the common port and the second port, a first pair of direct current (DC) blocking capacitors disposed to isolate the first semiconductor switching element in the first RF pathway, and a second pair of DC blocking capacitors disposed to isolate the second semiconductor switching element in the second RF pathway. The respective pairs of DC blocking capacitors allow for different bias voltages to be applied to the respective RF pathways. A charge-discharge circuit may also be employed to decrease transient switching time of the RF switch.

Abstract translation: 射频（RF）开关包括公共端口，第一端口和第二端口，设置在公共端口和第一端口之间的第一RF路径中的第一半导体开关元件，设置在第二端口中的第二半导体开关元件 公共端口和第二端口之间的RF路径，被设置为隔离第一RF路径中的第一半导体开关元件的第一对直流（DC）阻塞电容器和设置成隔离第二半导体的第二对隔离电容器 开关元件在第二RF通路中。 各对隔直电容器允许将不同的偏置电压施加到相应的RF通路。 也可以采用充放电电路来减少RF开关的瞬时切换时间。

公开(公告)号：US20140049312A1

公开(公告)日：2014-02-20

申请号：US13588197

申请日：2012-08-17

Applicant: Chen Chih-Sheng

Inventor： Chen Chih-Sheng

IPC: H03K17/687

CPC classification number: H03K17/693 ,  H03K2017/066 ,  H03K2217/0054 ,  H04B1/006 ,  H04B1/48

Abstract: A radio frequency (RF) switch including a common port, a first port, a second port, a first RF pathway extending between the common port and the first port, a second RF pathway extending between the common port and the second port, a first shunt path extending between the first RF pathway and ground, a second shunt path extending between the second RF pathway and ground, and a respective semiconductor switching element disposed in each of the first RF pathway, the second RF pathway, the first shunt path and the second shunt path configured to control whether the given RF pathway or shunt path is enabled or disabled at a given time, wherein a selected combination of conductivity types and control signals for the respective semiconductor switching elements are employed.

Abstract translation: 一种射频（RF）开关，包括公共端口，第一端口，第二端口，在公共端口和第一端口之间延伸的第一RF路径，在公共端口和第二端口之间延伸的第二RF路径，第一 在第一RF路径和地之间延伸的分流路径，在第二RF路径和地之间延伸的第二分路，以及设置在第一RF路径，第二RF路径，第一分路路径和第二RF路径中的每一个中的相应半导体开关元件 第二分流路径，被配置为控制给定的RF通路或并联路径是否在给定时间被使能或禁用，其中采用用于各个半导体开关元件的选择的导电类型和控制信号的组合。