公开(公告)号：US07760930B2

公开(公告)日：2010-07-20

申请号：US11358664

申请日：2006-02-21

申请人： Chen-Ting Lin ,  Chih-Cheng Chou ,  Chih-Hung Wu ,  Chia-Hua Chang

发明人： Chen-Ting Lin ,  Chih-Cheng Chou ,  Chih-Hung Wu ,  Chia-Hua Chang

IPC分类号： G06K9/00

CPC分类号： G01N21/9501 ,  G01N21/95607

摘要： The present disclosure provides a system and method for recognizing a defect image associated with a semiconductor substrate. In one example, the method includes collecting defect data of the defect image by testing and measuring the semiconductor substrate, extracting a pattern from the defect data, normalizing a location, orientation, and size of the pattern, and identifying the pattern after the pattern is normalized.

摘要翻译： 本公开提供了一种用于识别与半导体衬底相关联的缺陷图像的系统和方法。 在一个示例中，该方法包括通过测试和测量半导体衬底来收集缺陷图像的缺陷数据，从缺陷数据中提取图案，对图案的位置，取向和尺寸进行归一化，以及在图案之后识别图案 归一化

公开(公告)号：US20070196012A1

公开(公告)日：2007-08-23

申请号：US11358664

申请日：2006-02-21

申请人： Chen-Ting Lin ,  Chih-Cheng Jou ,  Chih-Hung Wu ,  Chia-Hua Chang

发明人： Chen-Ting Lin ,  Chih-Cheng Jou ,  Chih-Hung Wu ,  Chia-Hua Chang

IPC分类号： G06K9/00

CPC分类号： G01N21/9501 ,  G01N21/95607

摘要： The present disclosure provides a system and method for recognizing a defect image associated with a semiconductor substrate. In one example, the method includes collecting defect data of the defect image by testing and measuring the semiconductor substrate, extracting a pattern from the defect data, normalizing a location, orientation, and size of the pattern, and identifying the pattern after the pattern is normalized.

摘要翻译： 本公开提供了一种用于识别与半导体衬底相关联的缺陷图像的系统和方法。 在一个示例中，该方法包括通过测试和测量半导体衬底来收集缺陷图像的缺陷数据，从缺陷数据中提取图案，对图案的位置，取向和尺寸进行归一化，以及在图案之后识别图案 归一化

公开(公告)号：US20060128039A1

公开(公告)日：2006-06-15

申请号：US11010595

申请日：2004-12-13

申请人： Chen-Ting Lin ,  Chih-Hung Wu ,  Mei-Yen Li

发明人： Chen-Ting Lin ,  Chih-Hung Wu ,  Mei-Yen Li

IPC分类号： H01L21/66

CPC分类号： H01L22/20

摘要： A yield analysis method. First, a wafer having multiple dies is inspected to obtain wafer defect data containing defect information for every die in the wafer. Then a wafer map and an overall yield are generated according to the wafer defect data. The wafer map displays defective dies and defect-free dies in the wafer. Then, first and second systematic limited yields are calculated in accordance with the wafer defect data and the wafer map, wherein the first systematic limited yield is calculated excluding defective dies with localized distribution, and the second systematic limited yield is calculated excluding defective dies with repeated distribution. Then a random defect limited yield is determined in accordance with the overall yield, the first systematic limited yield, and the second systematic limited yield.

摘要翻译： 收益分析法。 首先，检查具有多个管芯的晶片，以获得晶片缺陷数据，该晶片缺陷数据包含晶片中的每个管芯的缺陷信息。 然后根据晶片缺陷数据产生晶片图和总产量。 晶片图显示晶片中的有缺陷的裸片和无缺陷的裸片。 然后，根据晶片缺陷数据和晶片图计算第一和第二系统有限的产量，其中计算除了具有局部分布的有缺陷的模具之外的第一系统有限屈服，并且计算第二系统有限屈服， 分配。 然后根据总收益率，第一系统有限收益率和第二系统有限收益率确定随机缺陷限制收益率。

公开(公告)号：US07386418B2

公开(公告)日：2008-06-10

申请号：US11010595

申请日：2004-12-13

申请人： Chen-Ting Lin ,  Chih-Hung Wu ,  Mei-Yen Li

发明人： Chen-Ting Lin ,  Chih-Hung Wu ,  Mei-Yen Li

IPC分类号： G06F17/18

CPC分类号： H01L22/20

摘要： A yield analysis method. First, a wafer having multiple dies is inspected to obtain wafer defect data containing defect information for every die in the wafer. Then a wafer map and an overall yield are generated according to the wafer defect data. The wafer map displays defective dies and defect-free dies in the wafer. Then, first and second systematic limited yields are calculated in accordance with the wafer defect data and the wafer map, wherein the first systematic limited yield is calculated excluding defective dies with localized distribution, and the second systematic limited yield is calculated excluding defective dies with repeated distribution. Then a random defect limited yield is determined in accordance with the overall yield, the first systematic limited yield, and the second systematic limited yield.

摘要翻译： 收益分析法。 首先，检查具有多个管芯的晶片，以获得晶片缺陷数据，该晶片缺陷数据包含晶片中的每个管芯的缺陷信息。 然后根据晶片缺陷数据产生晶片图和总产量。 晶片图显示晶片中的有缺陷的裸片和无缺陷的裸片。 然后，根据晶片缺陷数据和晶片图计算第一和第二系统有限的产量，其中计算除了具有局部分布的有缺陷的模具之外的第一系统有限屈服，并且计算第二系统有限屈服， 分配。 然后根据总收益率，第一系统有限收益率和第二系统有限收益率确定随机缺陷限制收益率。

公开(公告)号：US06225226B1

公开(公告)日：2001-05-01

申请号：US09458728

申请日：1999-12-13

申请人： Fu-Sheng Lee ,  Chien-Chen Chen ,  Chen-Ting Lin ,  Cheh-Chieh Lu

发明人： Fu-Sheng Lee ,  Chien-Chen Chen ,  Chen-Ting Lin ,  Cheh-Chieh Lu

IPC分类号： H01L2100

CPC分类号： H01L21/76873 ,  H01L21/76843 ,  H01L21/76879 ,  H01L21/76885 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming copper interconnects, without inducing copper diffusion, by eliminating the copper chemical-mechanical polishing process. A semiconductor structure is provided having a first metal layer thereover. A first inter-metal dielectric layer is formed over the first metal layer and planarized. A first resist layer is formed over the first inter-metal dielectric layer, and the first resist layer and the first inter-metal dielectric layer are patterned to form via openings with the first metal layer forming the bottoms of the via openings. A barrier/seed layer, comprising a barrier layer and an overlying seed layer, is formed on the sidewalls and bottoms of the via openings. A self-align layer, composed of a high-resistivity, inorganic material, is formed over the barrier/seed layer. The self-align layer is patterned to reform the via openings and to form trench openings, exposing the barrier/seed layer on the bottoms and sidewalls of the via openings and on the bottoms of the trench openings. A copper layer is electroplated onto the exposed barrier/seed layer at the bottoms and sidewalls of the via openings and on the bottom of the trenches. The remaining portions of the self-align layer removed, then the exposed portions of the barrier/seed layer are removed.

摘要翻译： 通过消除铜化学机械抛光工艺，形成铜互连的方法，不诱导铜扩散。 提供了具有其上的第一金属层的半导体结构。 第一金属介电层形成在第一金属层之上并且被平坦化。 第一抗蚀剂层形成在第一金属间介电层上，并且第一抗蚀剂层和第一金属间介电层被图案化以形成通孔，第一金属层形成通孔开口的底部。 在通路孔的侧壁和底部上形成包括阻挡层和覆盖种子层的阻挡层/籽晶层。 在阻挡/种子层上形成由高电阻率的无机材料构成的自对准层。 图案化自对准层以改变通孔开口并形成沟槽开口，使通孔开口的底部和侧壁以及沟槽开口的底部上的阻挡层/晶种层露出。 将铜层电镀在通孔开口的底部和侧壁上以及沟槽底部的暴露的阻挡层/籽晶层上。 去除自对准层的剩余部分，然后去除屏障/种子层的暴露部分。

公开(公告)号：US20070135956A1

公开(公告)日：2007-06-14

申请号：US11301520

申请日：2005-12-13

申请人： Shi-Chieh Liao ,  Shui-Tien Lin ,  Chen-Ting Lin

发明人： Shi-Chieh Liao ,  Shui-Tien Lin ,  Chen-Ting Lin

IPC分类号： G06F19/00

CPC分类号： G05B19/41845 ,  Y02P90/16 ,  Y02P90/18

摘要： Data location methods are implemented in an information provider storing and providing engineering data sets of fabrication. The information provider is coupled to a network. A first operation is received through the network. A portion of the engineering data sets is provided through the network in response to the first operation. Direction to the next operation operable on the information provider is automatically provided according to characteristics of the portion of the engineering data sets.

摘要翻译： 数据定位方法在存储和提供工程数据集的信息提供者中实现。 信息提供者耦合到一个网络。 通过网络接收第一个操作。 响应于第一操作，通过网络提供一部分工程数据集。 根据工程数据集的一部分的特性自动提供可在信息提供者上操作的下一个操作的方向。