公开(公告)号：US06478659B2

公开(公告)日：2002-11-12

申请号：US09737123

申请日：2000-12-13

Applicant: Cheng-An Peng ,  Jiun-Fang Wang

Inventor： Cheng-An Peng ,  Jiun-Fang Wang

IPC: B24B100

CPC classification number: B24B37/0056 ,  B24B7/228 ,  B24B37/042 ,  H01L21/31053

Abstract: A fixed abrasive chemical polishing method uses an aqueous solution that has a variable pH. During polishing the pH of the aqueous solution is changed so that the polishing process can be more precisely controlled. The removal rate and removal selectivity between oxide and nitride can be controlled by varying the pH of the aqueous solution.

Abstract translation: 固定的磨料化学抛光方法使用具有可变pH的水溶液。 在抛光期间改变水溶液的pH，从而可以更精确地控制抛光过程。 可以通过改变水溶液的pH来控制氧化物和氮化物之间的去除率和去除选择性。

公开(公告)号：US06736696B2

公开(公告)日：2004-05-18

申请号：US10134731

申请日：2002-04-30

Applicant: Cheng-An Peng ,  Guan-Jiun Yi

Inventor： Cheng-An Peng ,  Guan-Jiun Yi

IPC: B24B4900

CPC classification number: B24B37/042

Abstract: A method of improving uniformity control in chemical mechanical polishing (CMP). A CMP apparatus is provided with at least a platen, a polishing pad disposed on the platen and at least a polishing carrier installed over the platen. The platen rotates in a first rotating direction, and the polishing carrier is used to press a wafer on the polishing pad and drive the wafer to rotate. First, in a first-CMP step, the polishing carrier rotates in a second rotating direction. Then, in a second-CMP step, the polishing carrier rotates in a third rotating direction different from the second rotating direction.

Abstract translation: 改善化学机械抛光（CMP）中均匀性控制的方法。 CMP设备至少设置有压板，设置在压板上的抛光垫和至少安装在压板上的抛光载体。 压板在第一旋转方向上旋转，并且抛光载体用于将抛光垫上的晶片按压并驱动晶片旋转。 首先，在第一CMP步骤中，抛光载体沿第二旋转方向旋转。 然后，在第二CMP步骤中，抛光载体沿与第二旋转方向不同的第三旋转方向旋转。

公开(公告)号：US5925576A

公开(公告)日：1999-07-20

申请号：US136704

申请日：1998-08-19

Applicant: Cheng-An Peng

Inventor： Cheng-An Peng

IPC: B24B37/30 ,  B24B49/16 ,  H01L21/00

CPC classification number: B24B37/30 ,  B24B49/16 ,  H01L21/67242

Abstract: A plug for plugging selected perforations in a carrier assembly used in a chemical mechanical polishing system for polishing semiconductor wafers is disclosed. The plug comprises a pressure-resistant portion; a bottom portion attached to the pressure-resistant portion; and a leak-resistant portion extending from the pressure-resistant portion, dimensioned to fit snugly into the bottom portion.

Abstract translation: 公开了用于在用于抛光半导体晶片的化学机械抛光系统中使用的载体组件中插入所选穿孔的插头。 塞子包括耐压部分; 附接到耐压部分的底部; 以及从耐压部分延伸的防漏部分，其尺寸适于紧密地配合到底部。