公开(公告)号：US20070015362A1

公开(公告)日：2007-01-18

申请号：US11457726

申请日：2006-07-14

申请人： Cheol-Ju YUN ,  Kang-Yoon LEE ,  In-Ho NAM

发明人： Cheol-Ju YUN ,  Kang-Yoon LEE ,  In-Ho NAM

IPC分类号： H01L21/302

CPC分类号： H01L21/76885 ,  H01L21/76834 ,  H01L27/10855

摘要： Embodiments of a semiconductor device having storage nodes include an interlayer insulating layer disposed on a semiconductor substrate; a conductive pad disposed in the interlayer insulating layer to contact with a predetermined portion of the substrate, an upper portion of the conductive pad protruding above the interlayer insulating layer; an etch stop layer disposed on the conductive pad and the interlayer insulating layer; and storage nodes penetrating the etch stop layer and disposed on the conductive pad. A penetration path of wet etchant is completely blocked during the wet etch process that removes the mold oxide layer. Therefore, inadvertent etching of the insulating layer due to penetration of wet etchant is prevented, resulting in a stronger, more stable, storage node structure.

摘要翻译： 具有存储节点的半导体器件的实施例包括设置在半导体衬底上的层间绝缘层; 布置在所述层间绝缘层中以与所述基板的预定部分接触的导电焊盘，所述导电焊盘的上部突出于所述层间绝缘层的上方; 设置在所述导电焊盘和所述层间绝缘层上的蚀刻停止层; 并且存储节点穿透蚀刻停止层并且设置在导电焊盘上。 在湿法蚀刻工艺期间，湿蚀刻剂的穿透路径被完全阻挡，从而去除了模具氧化物层。 因此，防止了由于潮湿蚀刻剂的渗透而导致的绝缘层的无意蚀刻，导致更坚固，更稳定的存储节点结构。