公开(公告)号：US07199045B2

公开(公告)日：2007-04-03

申请号：US10854061

申请日：2004-05-26

申请人： Chi Wen Liu ,  Jung Chih Tsao ,  Shih Tzung Chang ,  Ying Lang Wang ,  Kei Wei Chen

发明人： Chi Wen Liu ,  Jung Chih Tsao ,  Shih Tzung Chang ,  Ying Lang Wang ,  Kei Wei Chen

IPC分类号： H01L21/4763

CPC分类号： H01L21/7684 ,  H01L21/76877

摘要： A method of forming a metal-filled opening in a semiconductor or other submicron device substrate includes forming a conductive bulk layer over the substrate surface and in the opening, wherein the conductive bulk layer has a first grain size. A conductive cap layer is formed over the conductive bulk layer, the conductive cap layer having a second grain size that is substantially smaller than the first grain size. At least one of the conductive bulk and cap layers are then planarized to form a planar surface that is substantially coincident with the substrate surface.

摘要翻译： 在半导体或其他亚微米器件衬底中形成填充金属的开口的方法包括在衬底表面和开口中形成导电体层，其中导电体层具有第一晶粒尺寸。 导电盖层形成在导电体层之上，导电盖层具有基本上小于第一晶粒尺寸的第二晶粒尺寸。 导电体和盖层中的至少一个然后被平坦化以形成基本上与衬底表面重合的平坦表面。