公开(公告)号：US6143579A

公开(公告)日：2000-11-07

申请号：US298936

申请日：1999-04-26

申请人： Chia-Der Chang ,  Chi-Hung Liao ,  Dean-E Lin ,  Sheng-Liang Pan

发明人： Chia-Der Chang ,  Chi-Hung Liao ,  Dean-E Lin ,  Sheng-Liang Pan

IPC分类号： H01L21/66 ,  H01L23/544

CPC分类号： H01L22/34 ,  H01L22/12 ,  H01L2924/0002

摘要： It has been observed that, when a commercial plasma etcher is used for multiple etching tasks involving a variety of products, the amount of plasma damage incurred depends upon the chamber history of the etching tool. Thus, etching a gate sidewall spacer on a damage sensitive product, for example, in a MOSFET product with very thin gate oxide, may result in significant degradation of the gate oxide if the plasma etching tool had been used to etch vias on another type product in the preceding job. A method for monitoring and recording the chamber history and ascertaining the status of a plasma etching tool with regard to the tendency of said tool to introduce plasma damage in thin gate and tunnel oxide layers is disclosed. The method includes an a oxide damage monitor wafer which contains arrays of simple test devices. The monitor wafers can be partially formed and banked for later use. The test devices comprise a polysilicon plate partially covering a gate oxide. A conformal oxide is formed over the structure and the wafer is subjected to a spacer etch in the plasma etching tool being appraised. Dielectric breakdown the thin oxide is measured and the data is compared to a chamber history of the etcher. Those etching procedures which adversely affect the chamber are identified. Once a chamber history is established, the etcher can be expeditiously scheduled and the incidence of jobs lost to oxide damage greatly reduced.

摘要翻译： 已经观察到，当商业等离子体蚀刻机用于涉及各种产品的多次蚀刻任务时，所产生的等离子体损伤的量取决于蚀刻工具的腔室历史。 因此，如果已经使用等离子体蚀刻工具蚀刻另一种类型产品上的通孔，则蚀刻损伤敏感产品上的栅极侧壁间隔物（例如，具有非常薄的栅极氧化物的MOSFET产品）可能导致栅极氧化物的显着降解 在前面的工作。 公开了一种用于监测和记录室历史并确定等离子体蚀刻工具关于所述工具在薄栅和隧道氧化物层中引入等离子体损伤的趋势的方法。 该方法包括含有简单测试装置阵列的氧化物损伤监测晶片。 显示器晶片可以部分地形成并分组以供以后使用。 测试装置包括部分覆盖栅极氧化物的多晶硅板。 在结构上形成共形氧化物，并且在评估的等离子体蚀刻工具中对晶片进行间隔蚀刻。 测量介电击穿薄氧化物，并将数据与蚀刻器的室历史进行比较。 识别对腔室有不利影响的蚀刻过程。 一旦建立了房间历史，就可以迅速安排蚀刻器，大大减少对氧化物损失造成的作业的发生。