公开(公告)号：US07817860B2

公开(公告)日：2010-10-19

申请号：US12326544

申请日：2008-12-02

申请人： Chie Shishido ,  Mayuka Iwasaki ,  Hiroki Kawada

发明人： Chie Shishido ,  Mayuka Iwasaki ,  Hiroki Kawada

IPC分类号： G06K9/46 ,  G06K9/00 ,  G06K9/68

CPC分类号： G06T7/74 ,  G06T2207/30148

摘要： Disclosed is a scanning electron microscope (SEM) for realizing high-precision dimension measurement of a sample, such as an ArF exposure photoresist, that requires the measurement of a dimension by a low S/N signal waveform. To this end, partial waveforms (or partial images) of sample signal waveforms (or an images) acquired from a dimension measurement target sample and a sample material of the same kind are registered in advance, a measurement target signal waveform (or an image) obtained from the dimension measurement target sample and the sample registration waveform are combined, and a dimension of the dimension measurement target pattern is calculated based on the combination result.

摘要翻译： 公开了一种用于实现需要通过低S / N信号波形测量尺寸的样品（例如ArF曝光光致抗蚀剂）的高精度尺寸测量的扫描电子显微镜（SEM）。 为此，预先登记从维度测量目标样本和相同种类的样本材料获取的样本信号波形（或图像）的部分波形（或部分图像），测量目标信号波形（或图像） 从尺寸测量目标样本和样本登记波形中获得的尺寸测量目标图案的尺寸基于组合结果被计算。

公开(公告)号：US20070092130A1

公开(公告)日：2007-04-26

申请号：US11322560

申请日：2006-01-03

申请人： Chie Shishido ,  Mayuka Iwasaki ,  Hiroki Kawada

发明人： Chie Shishido ,  Mayuka Iwasaki ,  Hiroki Kawada

IPC分类号： G06K9/00

CPC分类号： G06T7/74 ,  G06T2207/30148

摘要： Disclosed is a scanning electron microscope (SEM) for realizing high-precision dimension measurement of a sample, such as an ArF exposure photoresist, that requires the measurement of a dimension by a low S/N signal waveform. To this end, partial waveforms (or partial images) of sample signal waveforms (or an images) acquired from a dimension measurement target sample and a sample material of the same kind are registered in advance, a measurement target signal waveform (or an image) obtained from the dimension measurement target sample and the sample registration waveform are combined, and a dimension of the dimension measurement target pattern is calculated based on the combination result.

摘要翻译： 公开了一种用于实现需要通过低S / N信号波形测量尺寸的样品（例如ArF曝光光致抗蚀剂）的高精度尺寸测量的扫描电子显微镜（SEM）。 为此，预先登记从维度测量目标样本和相同种类的样本材料获取的样本信号波形（或图像）的部分波形（或部分图像），测量目标信号波形（或图像） 从尺寸测量目标样本和样本登记波形中获得的尺寸测量目标图案的尺寸基于组合结果被计算。

公开(公告)号：US07460714B2

公开(公告)日：2008-12-02

申请号：US11785790

申请日：2007-04-20

申请人： Chie Shishido ,  Mayuka Iwasaki ,  Hiroki Kawada

发明人： Chie Shishido ,  Mayuka Iwasaki ,  Hiroki Kawada

IPC分类号： G06K9/46 ,  G01N23/00

CPC分类号： G06T7/74 ,  G06T2207/30148

摘要： Disclosed is a scanning electron microscope (SEM) for realizing high-precision dimension measurement of a sample, such as an ArF exposure photoresist, that requires the measurement of a dimension by a low S/N signal waveform. To this end, partial waveforms (or partial images) of sample signal waveforms (or an images) acquired from a dimension measurement target sample and a sample material of the same kind are registered in advance, a measurement target signal waveform (or an image) obtained from the dimension measurement target sample and the sample registration waveform are combined, and a dimension of the dimension measurement target pattern is calculated based on the combination result.

摘要翻译： 公开了一种用于实现需要通过低S / N信号波形测量尺寸的样品（例如ArF曝光光致抗蚀剂）的高精度尺寸测量的扫描电子显微镜（SEM）。 为此，预先登记从维度测量目标样本和相同种类的样本材料获取的样本信号波形（或图像）的部分波形（或部分图像），测量目标信号波形（或图像） 从尺寸测量目标样本和样本登记波形中获得的尺寸测量目标图案的尺寸基于组合结果被计算。

公开(公告)号：US20070286494A1

公开(公告)日：2007-12-13

申请号：US11785790

申请日：2007-04-20

申请人： Chie Shishido ,  Mayuka Iwasaki ,  Hiroki Kawada

发明人： Chie Shishido ,  Mayuka Iwasaki ,  Hiroki Kawada

IPC分类号： G06K9/46

CPC分类号： G06T7/74 ,  G06T2207/30148

摘要： Disclosed is a scanning electron microscope (SEM) for realizing high-precision dimension measurement of a sample, such as an ArF exposure photoresist, that requires the measurement of a dimension by a low S/N signal waveform. To this end, partial waveforms (or partial images) of sample signal waveforms (or an images) acquired from a dimension measurement target sample and a sample material of the same kind are registered in advance, a measurement target signal waveform (or an image) obtained from the dimension measurement target sample and the sample registration waveform are combined, and a dimension of the dimension measurement target pattern is calculated based on the combination result.

摘要翻译： 公开了一种用于实现需要通过低S / N信号波形测量尺寸的样品（例如ArF曝光光致抗蚀剂）的高精度尺寸测量的扫描电子显微镜（SEM）。 为此，预先登记从维度测量目标样本和相同种类的样本材料获取的样本信号波形（或图像）的部分波形（或部分图像），测量目标信号波形（或图像） 从尺寸测量目标样本和样本登记波形中获得的尺寸测量目标图案的尺寸基于组合结果被计算。

公开(公告)号：US07269287B2

公开(公告)日：2007-09-11

申请号：US11322560

申请日：2006-01-03

申请人： Chie Shishido ,  Mayuka Iwasaki ,  Hiroki Kawada

发明人： Chie Shishido ,  Mayuka Iwasaki ,  Hiroki Kawada

IPC分类号： G06K9/46 ,  G01N23/00

CPC分类号： G06T7/74 ,  G06T2207/30148

摘要： Disclosed is a scanning electron microscope (SEM) for realizing high-precision dimension measurement of a sample, such as an ArF exposure photoresist, that requires the measurement of a dimension by a low S/N signal waveform. To this end, partial waveforms (or partial images) of sample signal waveforms (or an images) acquired from a dimension measurement target sample and a sample material of the same kind are registered in advance, a measurement target signal waveform (or an image) obtained from the dimension measurement target sample and the sample registration waveform are combined, and a dimension of the dimension measurement target pattern is calculated based on the combination result.

公开(公告)号：US08502145B2

公开(公告)日：2013-08-06

申请号：US13541939

申请日：2012-07-05

申请人： Mayuka Iwasaki ,  Chie Shishido ,  Maki Tanaka

发明人： Mayuka Iwasaki ,  Chie Shishido ,  Maki Tanaka

IPC分类号： G01N23/00 ,  G21K7/00

CPC分类号： G03F7/70608 ,  H01J2237/221 ,  H01J2237/2817

摘要： The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern.

摘要翻译： 本发明提供了一种用于实现高生产率的抗蚀剂图案的膜厚减少的检测和测量的系统，其可以应用于部分在线过程管理。 通过考虑抗蚀剂图案的膜厚度降低导致抗蚀剂的上表面的一些表面粗糙度的事实，通过对与上述表面的上表面对应的部分的粗糙度进行定量来计算膜厚减小指标值 抗蚀剂图案的电子显微镜图像已被用于传统的线宽测量。 通过将计算的指标值应用于先前将膜厚减小指标值与抗蚀剂图案的膜厚度降低量相关联的数据库来估计抗蚀剂图案的膜厚度减少量。

公开(公告)号：US20120267529A1

公开(公告)日：2012-10-25

申请号：US13541939

申请日：2012-07-05

申请人： Mayuka Iwasaki ,  Chie Shishido ,  Maki Tanaka

发明人： Mayuka Iwasaki ,  Chie Shishido ,  Maki Tanaka

IPC分类号： H01J37/26

CPC分类号： G03F7/70608 ,  H01J2237/221 ,  H01J2237/2817

摘要： The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern.

摘要翻译： 本发明提供了一种用于实现高生产率的抗蚀剂图案的膜厚减少的检测和测量的系统，其可以应用于部分在线过程管理。 通过考虑抗蚀剂图案的膜厚度降低导致抗蚀剂的上表面的一些表面粗糙度的事实，通过对与上述表面的上表面对应的部分的粗糙度进行定量来计算膜厚减小指标值 抗蚀剂图案的电子显微镜图像已被用于传统的线宽测量。 通过将计算的指标值应用于先前将膜厚减小指标值与抗蚀剂图案的膜厚度降低量相关联的数据库来估计抗蚀剂图案的膜厚度减少量。

公开(公告)号：US08217348B2

公开(公告)日：2012-07-10

申请号：US12354823

申请日：2009-01-16

申请人： Mayuka Iwasaki ,  Chie Shishido ,  Maki Tanaka

发明人： Mayuka Iwasaki ,  Chie Shishido ,  Maki Tanaka

IPC分类号： G01N23/00 ,  G21K7/00

CPC分类号： G03F7/70608 ,  H01J2237/221 ,  H01J2237/2817

摘要： The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern.

摘要翻译： 本发明提供了一种用于实现高生产率的抗蚀剂图案的膜厚减少的检测和测量的系统，其可以应用于部分在线过程管理。 通过考虑抗蚀剂图案的膜厚度降低导致抗蚀剂的上表面的一些表面粗糙度的事实，通过对与上述表面的上表面对应的部分的粗糙度进行定量来计算膜厚减小指标值 抗蚀剂图案的电子显微镜图像已被用于传统的线宽测量。 通过将计算的指标值应用于先前将膜厚减小指标值与抗蚀剂图案的膜厚度降低量相关联的数据库来估计抗蚀剂图案的膜厚度减少量。

公开(公告)号：US20120104254A1

公开(公告)日：2012-05-03

申请号：US13146436

申请日：2010-01-26

申请人： Chie Shishido ,  Atsushi Miyamoto ,  Mayuka Iwasaki ,  Tomofumi Nishiura ,  Go Kotaki

发明人： Chie Shishido ,  Atsushi Miyamoto ,  Mayuka Iwasaki ,  Tomofumi Nishiura ,  Go Kotaki

IPC分类号： H01J37/26

CPC分类号： H01J37/3045 ,  G01B2210/56 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/24578 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01J2237/2826

摘要： A charged particle beam device enabling prevention of degradation of reproducibility of measurement caused by an increase of the beam diameter attributed to an image shift and having a function of dealing with device-to-device variation. The charged particle beam device is used for measuring the dimensions of a pattern on a specimen using a line profile obtained by detecting secondary charged particles emitted from the specimen when the specimen is scanned with a primary charged particle beam converged on the specimen. A lookup table in which the position of image shift and the variation of the beam diameter are associated is prepared in advance by actual measurement or calculation and registered. When the dimensions are measured, image processing is carried out so as to correct the line profile for the variation of the beam diameter while the lookup table is referenced, and thereby the situation where the beam diameter is effectively equal is produced irrespective of the position of the image shift. Whit this, measurement by the charged particle beam excellent reproducibility can be carried out.

摘要翻译： 一种带电粒子束装置，其能够防止由于图像偏移引起的光束直径的增加而导致的测量再现性的劣化，并且具有处理器件到器件变化的功能。 带电粒子束装置用于通过使用聚集在样本上的初级带电粒子束扫描样本时检测从样本发射的二次带电粒子而获得的线轮廓来测量样品上的图案的尺寸。 通过实际测量或计算预先准备其中图像偏移的位置和光束直径的变化相关联的查找表并注册。 当测量尺寸时，执行图像处理，以便在参考查找表时校正用于变化光束直径的线轮廓，从而产生光束直径有效相等的情况，而与 图像偏移。 这样，可以进行通过带电粒子束测量的优异的再现性。

公开(公告)号：US20090212211A1

公开(公告)日：2009-08-27

申请号：US12354823

申请日：2009-01-16

申请人： Mayuka IWASAKI ,  Chie Shishido ,  Maki Tanaka

发明人： Mayuka IWASAKI ,  Chie Shishido ,  Maki Tanaka

IPC分类号： G01N23/00

CPC分类号： G03F7/70608 ,  H01J2237/221 ,  H01J2237/2817

摘要： The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern.

摘要翻译： 本发明提供了一种用于实现高生产率的抗蚀剂图案的膜厚减少的检测和测量的系统，其可以应用于部分在线过程管理。 通过考虑抗蚀剂图案的膜厚度降低导致抗蚀剂的上表面的一些表面粗糙度的事实，通过对与上述表面的上表面对应的部分的粗糙度进行定量来计算膜厚减小指标值 抗蚀剂图案的电子显微镜图像已被用于传统的线宽测量。 通过将计算的指标值应用于先前将膜厚减小指标值与抗蚀剂图案的膜厚度降低量相关联的数据库来估计抗蚀剂图案的膜厚度减少量。