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公开(公告)号：US08357897B2
公开(公告)日：2013-01-22
申请号：US13146436
申请日：2010-01-26
CPC分类号： H01J37/3045 , G01B2210/56 , H01J37/244 , H01J37/28 , H01J2237/24578 , H01J2237/24592 , H01J2237/2817 , H01J2237/2826
摘要： A charged particle beam device enabling prevention of degradation of reproducibility of measurement caused by an increase of the beam diameter attributed to an image shift and having a function of dealing with device-to-device variation. The charged particle beam device is used for measuring the dimensions of a pattern on a specimen using a line profile obtained by detecting secondary charged particles emitted from the specimen when the specimen is scanned with a primary charged particle beam converged on the specimen. A lookup table in which the position of image shift and the variation of the beam diameter are associated is prepared in advance by actual measurement or calculation and registered. When the dimensions are measured, image processing is carried out so as to correct the line profile for the variation of the beam diameter while the lookup table is referenced, and thereby the situation where the beam diameter is effectively equal is produced irrespective of the position of the image shift. Whit this, measurement by the charged particle beam excellent reproducibility can be carried out.
摘要翻译： 一种带电粒子束装置，其能够防止由于图像偏移引起的光束直径的增加而导致的测量再现性的劣化，并且具有处理器件到器件变化的功能。 带电粒子束装置用于通过使用聚集在样本上的初级带电粒子束扫描样本时检测从样本发射的二次带电粒子而获得的线轮廓来测量样品上的图案的尺寸。 通过实际测量或计算预先准备其中图像偏移的位置和光束直径的变化相关联的查找表并注册。 当测量尺寸时，执行图像处理，以便在参考查找表时校正用于变化光束直径的线轮廓，从而产生光束直径有效相等的情况，而与 图像偏移。 这样，可以进行通过带电粒子束测量的优异的再现性。
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公开(公告)号：US20120104254A1
公开(公告)日：2012-05-03
申请号：US13146436
申请日：2010-01-26
IPC分类号： H01J37/26
CPC分类号： H01J37/3045 , G01B2210/56 , H01J37/244 , H01J37/28 , H01J2237/24578 , H01J2237/24592 , H01J2237/2817 , H01J2237/2826
摘要： A charged particle beam device enabling prevention of degradation of reproducibility of measurement caused by an increase of the beam diameter attributed to an image shift and having a function of dealing with device-to-device variation. The charged particle beam device is used for measuring the dimensions of a pattern on a specimen using a line profile obtained by detecting secondary charged particles emitted from the specimen when the specimen is scanned with a primary charged particle beam converged on the specimen. A lookup table in which the position of image shift and the variation of the beam diameter are associated is prepared in advance by actual measurement or calculation and registered. When the dimensions are measured, image processing is carried out so as to correct the line profile for the variation of the beam diameter while the lookup table is referenced, and thereby the situation where the beam diameter is effectively equal is produced irrespective of the position of the image shift. Whit this, measurement by the charged particle beam excellent reproducibility can be carried out.
摘要翻译： 一种带电粒子束装置，其能够防止由于图像偏移引起的光束直径的增加而导致的测量再现性的劣化，并且具有处理器件到器件变化的功能。 带电粒子束装置用于通过使用聚集在样本上的初级带电粒子束扫描样本时检测从样本发射的二次带电粒子而获得的线轮廓来测量样品上的图案的尺寸。 通过实际测量或计算预先准备其中图像偏移的位置和光束直径的变化相关联的查找表并注册。 当测量尺寸时，执行图像处理，以便在参考查找表时校正用于变化光束直径的线轮廓，从而产生光束直径有效相等的情况，而与 图像偏移。 这样，可以进行通过带电粒子束测量的优异的再现性。
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3.发明授权Method and apparatus for inspecting defect of pattern formed on semiconductor device 有权用于检查在半导体器件上形成的图案的缺陷的方法和装置公开(公告)号：US08331651B2
公开(公告)日：2012-12-11
申请号：US13231394
申请日：2011-09-13
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06K9/6255 , G06T2207/10056 , G06T2207/30148 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： An apparatus and method for inspecting a defect of a circuit pattern formed on a semiconductor wafer includes a defect classifier have a comparison shape forming section for forming a plurality of comparison shapes corresponding to an SEM image of an inspection region by deforming the shape of the circuit pattern in accordance with a plurality of shape deformation rules using design data corresponding to the circuit pattern within the inspection region and a shape similar to the SEM image of the inspection region out of the plurality of comparison shapes formed and selected as the comparison shape, and a shape comparing and classifying section for classifying the SEM image using information of the comparison shape selected in the comparison shape forming section and the inspection shape of the circuit pattern of the SEM image of the inspection region.
摘要翻译： 用于检查形成在半导体晶片上的电路图案的缺陷的装置和方法包括：缺陷分类器，具有比较形状形成部，用于通过使电路的形状变形来形成与检查区域的SEM图像对应的多个比较形状 使用与检查区域内的电路图案相对应的设计数据的多个形状变形规则的形状以及形成和选择为比较形状的多个比较形状中的检查区域的SEM图像的形状，以及 形状比较和分类部分，用于使用在比较形状形成部分中选择的比较形状的信息和检查区域的SEM图像的电路图案的检查形状来对SEM图像进行分类。
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4.发明申请Method and Apparatus For Inspecting Defect Of Pattern Formed On Semiconductor Device 有权检测半导体器件形成缺陷的方法和装置公开(公告)号：US20120002861A1
公开(公告)日：2012-01-05
申请号：US13231394
申请日：2011-09-13
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06K9/6255 , G06T2207/10056 , G06T2207/30148 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： An apparatus and method for inspecting a defect of a circuit pattern formed on a semiconductor wafer includes a defect classifier have a comparison shape forming section for forming a plurality of comparison shapes corresponding to an SEM image of an inspection region by deforming the shape of the circuit pattern in accordance with a plurality of shape deformation rules using design data corresponding to the circuit pattern within the inspection region and a shape similar to the SEM image of the inspection region out of the plurality of comparison shapes formed and selected as the comparison shape, and a shape comparing and classifying section for classifying the SEM image using information of the comparison shape selected in the comparison shape forming section and the inspection shape of the circuit pattern of the SEM image of the inspection region.
摘要翻译： 用于检查形成在半导体晶片上的电路图案的缺陷的装置和方法包括：缺陷分类器，具有比较形状形成部，用于通过使电路的形状变形来形成与检查区域的SEM图像对应的多个比较形状 使用与检查区域内的电路图案相对应的设计数据的多个形状变形规则的形状以及形成和选择为比较形状的多个比较形状中的检查区域的SEM图像的形状，以及 形状比较和分类部分，用于使用在比较形状形成部分中选择的比较形状的信息和检查区域的SEM图像的电路图案的检查形状来对SEM图像进行分类。
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5.发明授权Method and apparatus for inspecting defect of pattern formed on semiconductor device 有权用于检查在半导体器件上形成的图案的缺陷的方法和装置公开(公告)号：US08045789B2
公开(公告)日：2011-10-25
申请号：US12350260
申请日：2009-01-08
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06K9/6255 , G06T2207/10056 , G06T2207/30148 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： In the inspection apparatus for a defect of a semiconductor and the method using it for automatically detecting the defect on a semiconductor wafer and presuming the defect occurrence factor using the circuit design data, a plurality of shapes are formed from the circuit design data by deforming the design data with respect to shape deformation items stipulated for respective defect occurrence factor for comparison with the inspection object circuit pattern. The defect is detected by comparison of the group of shapes formed and the actual pattern. Further, the occurrence factors of these defects are presumed, and the defects are classified according to respective factor.
摘要翻译： 在半导体缺陷检查装置及其自动检测半导体晶片上的缺陷的方法中，使用电路设计数据设定缺陷发生因子，通过使电路设计数据变形来形成多个形状 相对于与检查对象电路图案进行比较的各个缺陷发生因子规定的形状变形项目的设计数据。 通过比较形成的形状组和实际图案来检测缺陷。 此外，推测出这些缺陷的发生因素，根据各自的因素对缺陷进行分类。
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6.发明申请Method and Apparatus For Measuring Dimension Of Circuit Pattern Formed On Substrate By Using Scanning Electron Microscope 有权用于通过扫描电子显微镜测量在基板上形成的电路图形尺寸的方法和装置公开(公告)号：US20110127429A1
公开(公告)日：2011-06-02
申请号：US13024594
申请日：2011-02-10
IPC分类号： G01N23/225
CPC分类号： G01N23/2251 , G01B15/00
摘要： In the dimension measurement of a circuit pattern using a scanning electron microscope (SEM), in order to make it possible to automatically image desired evaluation points (EPs) on a sample, and automatically measure the circuit pattern formed at the evaluation points, according to the present invention, in the dimension measurement of a circuit pattern using a scanning electron microscope (SEM), it is arranged that coordinate data of the EP and design data of the circuit pattern including the EP are used as an input, creation of a dimension measurement cursor for measuring the pattern existing in the EP and selection or setting of the dimension measurement method are automatically performed based on the EP coordinate data and the design data to automatically create a recipe, and automatic imaging/measurement is performed using the recipe.
摘要翻译： 在使用扫描电子显微镜（SEM）的电路图案的尺寸测量中，为了能够自动地对样品进行成像，并自动测量在评价点形成的电路图案，根据 在本发明中，在使用扫描电子显微镜（SEM）的电路图案的尺寸测量中，将EP的坐标数据和包括EP的电路图案的设计数据用作输入，创建尺寸 根据EP坐标数据和设计数据自动执行用于测量EP中存在的图案的测量光标和尺寸测量方法的选择或设置，以自动创建配方，并且使用配方执行自动成像/测量。
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7.发明申请SEM SYSTEM AND A METHOD FOR PRODUCING A RECIPE FOR IMAGING OR MEASURING A SPECIMEN BY USING THE SEM SYSTEM 有权SEM系统和使用SEM系统生产样品的样品或测量样品的方法公开(公告)号：US20080159609A1
公开(公告)日：2008-07-03
申请号：US11954410
申请日：2007-12-12
IPC分类号： G06K9/00
CPC分类号： G06T7/0006 , G06T2207/30148
摘要： This invention relates to a SEM system constructed to create imaging recipes or/and measuring recipes automatically and at high speed, and improve inspection efficiency and an automation ratio, and to a method using the SEM system; a method for creation of imaging recipes and measuring recipes in the SEM system is adapted to include, in a recipe arithmetic unit, the steps of evaluating a tolerance for an imaging position error level at an evaluation point, evaluating a value predicted of the imaging position error level at the evaluation point when any region on circuit pattern design data is defined as an addressing point, and determining an imaging recipe and a measuring recipe on the basis of a relationship between the tolerance for the imaging position error level at the evaluation point and the predicted value of the imaging position error level at the evaluation point.
摘要翻译： 本发明涉及一种用于自动和高速创建成像配方或/和测量配方，提高检测效率和自动化比例的SEM系统以及使用SEM系统的方法。 用于在SEM系统中创建成像配方和测量配方的方法适于在配方算术单元中包括评估评估点处的成像位置误差水平的公差的步骤，评估成像位置的预测值 当将电路图案设计数据上的任何区域定义为寻址点时，在评估点处的误差水平，以及基于评估点处的成像位置误差水平的公差与所述评估点之间的关系确定成像配方和测量配方 在评估点的成像位置误差水平的预测值。
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8.发明授权Method and apparatus for measuring dimension of circuit pattern formed on substrate by using scanning electron microscope 有权使用扫描电子显微镜测量在基片上形成的电路图形尺寸的方法和装置公开(公告)号：US07888638B2
公开(公告)日：2011-02-15
申请号：US12354923
申请日：2009-01-16
CPC分类号： G01N23/2251 , G01B15/00
摘要： In the dimension measurement of a circuit pattern using a scanning electron microscope (SEM), in order to make it possible to automatically image desired evaluation points (EPs) on a sample, and automatically measure the circuit pattern formed at the evaluation points, according to the present invention, in the dimension measurement of a circuit pattern using a scanning electron microscope (SEM), it is arranged that coordinate data of the EP and design data of the circuit pattern including the EP are used as an input, creation of a dimension measurement cursor for measuring the pattern existing in the EP and selection or setting of the dimension measurement method are automatically performed based on the EP coordinate data and the design data to automatically create a recipe, and automatic imaging/measurement is performed using the recipe.
摘要翻译： 在使用扫描电子显微镜（SEM）的电路图案的尺寸测量中，为了能够自动地对样品进行成像，并自动测量在评价点形成的电路图案，根据 在本发明中，在使用扫描电子显微镜（SEM）的电路图案的尺寸测量中，将EP的坐标数据和包括EP的电路图案的设计数据用作输入，创建尺寸 根据EP坐标数据和设计数据自动执行用于测量EP中存在的图案的测量光标和尺寸测量方法的选择或设置，以自动创建配方，并且使用配方执行自动成像/测量。
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9.发明申请Method and Apparatus for Measuring Dimension of Circuit Patterm Formed on Substrate by Using Scanning Electron Microscope 有权通过扫描电子显微镜测量在基板上形成的电路板的尺寸的方法和装置公开(公告)号：US20090242760A1
公开(公告)日：2009-10-01
申请号：US12354923
申请日：2009-01-16
CPC分类号： G01N23/2251 , G01B15/00
摘要： In the dimension measurement of a circuit pattern using a scanning electron microscope (SEM), in order to make it possible to automatically image desired evaluation points (EPs) on a sample, and automatically measure the circuit pattern formed at the evaluation points, according to the present invention, in the dimension measurement of a circuit pattern using a scanning electron microscope (SEM), it is arranged that coordinate data of the EP and design data of the circuit pattern including the EP are used as an input, creation of a dimension measurement cursor for measuring the pattern existing in the EP and selection or setting of the dimension measurement method are automatically performed based on the EP coordinate data and the design data to automatically create a recipe, and automatic imaging/measurement is performed using the recipe.
摘要翻译： 在使用扫描电子显微镜（SEM）的电路图案的尺寸测量中，为了能够自动地对样品进行成像，并自动测量在评价点形成的电路图案，根据 在本发明中，在使用扫描电子显微镜（SEM）的电路图案的尺寸测量中，将EP的坐标数据和包括EP的电路图案的设计数据用作输入，创建尺寸 根据EP坐标数据和设计数据自动执行用于测量EP中存在的图案的测量光标和尺寸测量方法的选择或设置，以自动创建配方，并且使用配方执行自动成像/测量。
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10.发明授权Method and apparatus for measuring dimension of circuit pattern formed on substrate by using scanning electron microscope 有权使用扫描电子显微镜测量在基片上形成的电路图形尺寸的方法和装置公开(公告)号：US08283630B2
公开(公告)日：2012-10-09
申请号：US13024594
申请日：2011-02-10
CPC分类号： G01N23/2251 , G01B15/00
摘要： In the dimension measurement of a circuit pattern using a scanning electron microscope (SEM), in order to make it possible to automatically image desired evaluation points (EPs) on a sample, and automatically measure the circuit pattern formed at the evaluation points, according to the present invention, in the dimension measurement of a circuit pattern using a scanning electron microscope (SEM), it is arranged that coordinate data of the EP and design data of the circuit pattern including the EP are used as an input, creation of a dimension measurement cursor for measuring the pattern existing in the EP and selection or setting of the dimension measurement method are automatically performed based on the EP coordinate data and the design data to automatically create a recipe, and automatic imaging/measurement is performed using the recipe.
摘要翻译： 在使用扫描电子显微镜（SEM）的电路图案的尺寸测量中，为了能够自动地对样品进行成像，并自动测量在评价点形成的电路图案，根据 在本发明中，在使用扫描电子显微镜（SEM）的电路图案的尺寸测量中，将EP的坐标数据和包括EP的电路图案的设计数据用作输入，创建尺寸 根据EP坐标数据和设计数据自动执行用于测量EP中存在的图案的测量光标和尺寸测量方法的选择或设置，以自动创建配方，并且使用配方执行自动成像/测量。
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