公开(公告)号：US06360756B1

公开(公告)日：2002-03-26

申请号：US09325307

申请日：1999-06-03

申请人： Chie-Chi Chen ,  Tzu-Yang Chung ,  Szu-Yao Wang ,  Sheng-Liang Pan

发明人： Chie-Chi Chen ,  Tzu-Yang Chung ,  Szu-Yao Wang ,  Sheng-Liang Pan

IPC分类号： B08B704

CPC分类号： H01L21/67057 ,  B08B3/102 ,  Y10S134/902

摘要： A rinse tank for rinsing electronic substrates after a chemical process and a method for utilizing such rinse tank are provided. In the rinse tank, devices for performing a quick dump rinse; for performing a cascade overflow rinse and for feeding an inert gas bubbling are provided in the cavity of a single rinse tank. By utilizing the present invention novel rinse tank, the processing problems frequently observed in conventional rinse tanks where two rinse tanks are required for the quick dump rinse and for the cascade overflow rinse, such as particle re-deposition and a large floor space area requirement are eliminated. Furthermore, the wafer rinse process after a metal etching process can be accomplished in a total process time that is at least 2˜3 minutes shorter than that required by using conventional rinse tanks.

摘要翻译： 提供了一种用于在化学过程之后冲洗电子基板的冲洗槽和用于使用这种冲洗槽的方法。 在冲洗槽中，进行快速冲洗冲洗的装置; 在单个冲洗槽的空腔中设置用于进行级联溢流冲洗和用于进料惰性气体鼓泡的装置。 通过利用本发明的新型漂洗槽，在常规冲洗槽中经常观察到的处理问题，其中需要两个漂洗槽用于快速冲洗冲洗和级联溢流冲洗，例如颗粒再沉积和大的占地空间面积要求， 消除了 此外，在金属蚀刻工艺之后的晶片冲洗过程可以在比使用常规冲洗槽所需的总处理时间短至少2〜3分钟的时间内完成。

公开(公告)号：US06281140B1

公开(公告)日：2001-08-28

申请号：US09591846

申请日：2000-06-12

申请人： Chie-Chi Chen ,  Sheng-Liang Pan

发明人： Chie-Chi Chen ,  Sheng-Liang Pan

IPC分类号： H01L214763

CPC分类号： H01L21/28185 ,  H01L21/2652 ,  H01L21/3105 ,  H01L21/31105

摘要： A process for reducing the surface roughness of a silicon dioxide gate insulator layer, that has been subjected to a boron ion implantation procedure, has been developed. The process features the use of an ammonium hydroxide-hydrogen peroxide solution, applied to the gate insulator layer, to reduce the surface roughness of the gate insulator layer, created by the boron ion implantation procedure. The treatment of the gate insulator layer, in the ammonium hydroxide-hydrogen peroxide solution, results in a surface roughness equivalent to the surface roughness of the gate insulator layer, prior to the boron ion implantation procedure.

摘要翻译： 已经开发了一种用于降低二氧化硅栅极绝缘体层的已经经过硼离子注入工艺的表面粗糙度的方法。 该方法的特征在于使用施加到栅极绝缘体层的氢氧化铵 - 过氧化氢溶液，以减少由硼离子注入程序产生的栅极绝缘体层的表面粗糙度。 在硼离子注入程序之前，在氢氧化铵 - 过氧化氢溶液中处理栅极绝缘体层导致与栅极绝缘体层的表面粗糙度相当的表面粗糙度。

公开(公告)号：US06911097B1

公开(公告)日：2005-06-28

申请号：US09629213

申请日：2000-07-31

申请人： Chie-Chi Chen ,  Wen-Hsiang Tseng ,  Sheng-Liang Pan ,  Jen-Shiang Fang

发明人： Chie-Chi Chen ,  Wen-Hsiang Tseng ,  Sheng-Liang Pan ,  Jen-Shiang Fang

IPC分类号： B08B3/10 ,  B08B5/00 ,  H01L21/00

CPC分类号： H01L21/67086 ,  B08B3/102 ,  Y10S438/906

摘要： Provided is a process and apparatus characterized by a gas distribution plate in which a gas supply manifold directs gas bubbles from the bottom of a process tank upward and between wafers contained in a cassette and supported therewithin. This improved method and apparatus is used for effectively stripping photoresist from the larger semiconductor wafers having dense top conductive patterns with protuberant sidewalls. The method provides a scrubbing action that is parallel to the device array being formed on the wafer's surface. Broadly stated, the method of a chemical action on large substrates supported adjacent respective edge portions thereof in a carrier includes submerging the carrier and substrates supported thereby in a process tank containing a liquid chemical, and a gas distribution plate disposed on the bottom of the tank for directing gas bubbles upward and parallel to the surfaces of each substrate contained in the carrier to ensure that a uniform chemical action occurs.

摘要翻译： 提供了一种工艺和装置，其特征在于气体分配板，其中气体供应歧管将处理罐底部的气泡向上引导到包含在盒中并在其中支撑的晶片之间。 这种改进的方法和装置用于从具有突出侧壁的致密顶部导电图案的较大半导体晶片有效地剥离光致抗蚀剂。 该方法提供了平行于在晶片表面上形成的器件阵列的擦洗动作。 广泛地说，在载体附近支撑在其各个边缘部分上的大的基板上的化学作用的方法包括将载体和由其支撑的基板浸没在包含液体化学品的处理槽中，以及设置在罐的底部上的气体分配板 用于将气泡向上引导并平行于包含在载体中的每个基底的表面，以确保发生均匀的化学作用。