公开(公告)号：US20090026516A1

公开(公告)日：2009-01-29

申请号：US11951270

申请日：2007-12-05

申请人： Chien-Li CHENG ,  Shian-Jyh Lin ,  Ming-Yuan Huang

发明人： Chien-Li CHENG ,  Shian-Jyh Lin ,  Ming-Yuan Huang

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L27/10867

摘要： A method for fabricating a semiconductor memory device. A pair of neighboring trench capacitors is formed in a substrate. An insulating layer having a pair of connecting structures therein is formed on the substrate, in which the pair of connecting structures is electrically connected to the pair of neighboring trench capacitors. An active layer is formed on the insulating layer between the pair of connecting structures so as to cover the pair of connecting structures. A pair of gate structures is formed on the active layer to electrically connect to the pair of trench capacitors. A semiconductor memory device is also disclosed.

摘要翻译： 一种制造半导体存储器件的方法。 在衬底中形成一对相邻的沟槽电容器。 在其上形成有一对连接结构的绝缘层，其中一对连接结构电连接到一对相邻的沟槽电容器。 在一对连接结构之间的绝缘层上形成有源层，以便覆盖该对连接结构。 在有源层上形成一对栅极结构，以电连接到该对沟槽电容器。 还公开了一种半导体存储器件。