公开(公告)号：US20060043536A1

公开(公告)日：2006-03-02

申请号：US10931655

申请日：2004-08-31

申请人： Chih-Chen Co ,  Daniel Steckert

发明人： Chih-Chen Co ,  Daniel Steckert

IPC分类号： H01L23/58 ,  H01L21/461

CPC分类号： H01L21/32139 ,  G03F7/40 ,  G03F7/405 ,  H01L21/0273

摘要： A method for forming a semiconductor device comprises forming a layer to be etched, and forming a patterned photoresist layer over the layer to be etched. The patterned photoresist layer is treated prior to etching, for example by implantation with argon or nitrogen. This treatment reduces the volume of the photoresist, possibly by densifying the layer, which results in the photoresist layer being more resistant to an etch and decreasing the size of the feature to be formed. After treating the photoresist layer, the layer to be etched is exposed to an etchant.

摘要翻译： 一种用于形成半导体器件的方法包括形成待蚀刻的层，并在待蚀刻的层上形成图案化的光致抗蚀剂层。 图案化的光致抗蚀剂层在蚀刻之前被处理，例如通过用氩或氮注入。 这种处理可能通过致密化该层来降低光致抗蚀剂的体积，这导致光致抗蚀剂层更能抵抗蚀刻并且减小要形成的特征的尺寸。 在处理光致抗蚀剂层之后，将要蚀刻的层暴露于蚀刻剂。