公开(公告)号：US07922921B2

公开(公告)日：2011-04-12

申请号：US10708642

申请日：2004-03-17

申请人： Chih-Chung Chuang ,  Shin-Jien Kuo ,  Chao-Yun Cheng ,  Shu-Feng Wu

发明人： Chih-Chung Chuang ,  Shin-Jien Kuo ,  Chao-Yun Cheng ,  Shu-Feng Wu

IPC分类号： H01L21/302

CPC分类号： H01L27/124 ,  C23F4/00 ,  G02F2001/136295 ,  H01L21/32136 ,  H01L29/4908

摘要： The present invention includes the steps of providing a substrate having a main surface; depositing a dual-metal layer such as Mo/AlNd, MoW/AlNd, MoW/Al onto the main surface of the substrate; defining gate and word line patter using a layer of photoresist; and using the photoresist as an etching mask, a first metal dry etching process is carried out to etch the dual-metal layer at an etching selectivity that is significantly higher than prior art. The first metal dry etching process uses oxygen/fluorine containing etching gas mixture and oxygen/chlorine containing etching gas mixture to form the dual-metal gate and word line pattern having slightly oblique sidewalls. End point detection mode detected at 704 nm is used in the first metal dry etching process.

摘要翻译： 本发明包括提供具有主表面的基板的步骤; 在衬底的主表面上沉积诸如Mo / AlNd，MoW / AlNd，MoW / Al的双金属层; 使用一层光刻胶定义栅极和字线图案; 并且使用光致抗蚀剂作为蚀刻掩模，执行第一金属干蚀刻工艺以以比现有技术显着更高的蚀刻选择性蚀刻双金属层。 第一种金属干法蚀刻工艺使用含氧/含氟蚀刻气体混合物和含氧/氯的蚀刻气体混合物以形成具有稍微倾斜的侧壁的双金属栅极和字线图案。 在第一金属干蚀刻工艺中使用在704nm处检测到的终点检测模式。

公开(公告)号：US06926014B2

公开(公告)日：2005-08-09

申请号：US10444571

申请日：2003-05-22

申请人： Chao-Yun Cheng ,  Shin-Jien Kuo ,  Chih-Chung Chuang ,  Shu-Feng Wu

发明人： Chao-Yun Cheng ,  Shin-Jien Kuo ,  Chih-Chung Chuang ,  Shu-Feng Wu

IPC分类号： B08B7/00 ,  B08B9/093 ,  C25F1/00

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  Y10S134/902 ,  Y10S438/905

摘要： A method for cleaning a plasma chamber after metal etching. First, a substrate having a metal layer thereon is placed in a plasma chamber. Next, the metal layer is etched. Finally, the substrate is removed from the plasma chamber to perform a dry cleaning which includes the following steps. First, the inner wall of the plasma chamber is cleaned by plasma etching using oxygen as a process gas. Next, the top and bottom electrode plates in the plasma chamber are cleaned by plasma etching using chlorine and boron chloride as process gases. Next, the inner wall of the plasma chamber is cleaned again by plasma etching using sulfur hexafluoride and oxygen as process gases. Finally, oxygen and helium used as purging gases are injected into the plasma chamber and exhausted from therein.

摘要翻译： 金属蚀刻后的等离子体室的清洗方法。 首先，将其上具有金属层的基板放置在等离子体室中。 接下来，蚀刻金属层。 最后，将基板从等离子体室中取出以进行干洗，其中包括以下步骤。 首先，通过使用氧作为处理气体的等离子体蚀刻来清洁等离子体室的内壁。 接下来，通过使用氯和氯化硼作为工艺气体的等离子体蚀刻来清洁等离子体室中的顶部和底部电极板。 接下来，通过使用六氟化硫的等离子体蚀刻和氧作为工艺气体再次清洁等离子体室的内壁。 最后，用作净化气体的氧气和氦气被注入到等离子体室中并从其中排出。