公开(公告)号：US20090212789A1

公开(公告)日：2009-08-27

申请号：US12117773

申请日：2008-05-09

Applicant: Chih-Ping LIN ,  Chih-Chung Chung

Inventor： Chih-Ping LIN ,  Chih-Chung Chung

IPC: G01N22/00 ,  G01K13/02

CPC classification number: G01N22/04

Abstract: This invention utilizes the principle of time domain reflectometry (TDR) to develop an improved apparatus and method for suspended solid concentration (SSC) measurement. The apparatus comprises a TDR sensing waveguide for stably determining an electromagnetic-wave (EM-wave) travel time and a temperature sensor. The TDR sensing waveguide and the temperature sensor are submerged in a suspension to detect the EM-wave travel time and the temperature. A temperature-corrected relationship between EM-wave travel time and SSC is found and used to estimate the SSC. Although TDR has been used for measuring soil moisture content and high SSC, its accuracy is not satisfactory for typical SSC monitoring. The present invention improves the accuracy of TDR in SSC measurement by providing the apparatus and method disclosed herein, which are not affected by an electrical conductivity of the suspension and particle sizes of suspended solids therein, and therefore meet the requirements of general engineering applications and environmental monitoring.

Abstract translation: 本发明利用时域反射法（TDR）的原理开发了一种改进的悬浮固体浓度（SSC）测量装置和方法。 该装置包括用于稳定地确定电磁波（EM波）行进时间的TDR感测波导和温度传感器。 将TDR传感波导和温度传感器浸没在悬架中，以检测EM波的行进时间和温度。 发现EM波移动时间与SSC之间的温度校正关系，用于估计SSC。 虽然TDR已被用于测量土壤含水量和高SSC，但其典型SSC监测的准确度并不理想。 本发明通过提供本文公开的装置和方法提高了SSC测量中的TDR的精度，其不受悬浮液的导电性和悬浮固体颗粒尺寸的影响，因此满足一般工程应用和环境的要求 监控。

公开(公告)号：US20110117709A1

公开(公告)日：2011-05-19

申请号：US12618585

申请日：2009-11-13

Applicant: Chih-Ping LIN ,  Shih-Ming CHEN ,  Hsiao-Ying YANG ,  Wen-Hsien LIU ,  Po-Sheng HU

Inventor： Chih-Ping LIN ,  Shih-Ming CHEN ,  Hsiao-Ying YANG ,  Wen-Hsien LIU ,  Po-Sheng HU

IPC: H01L21/8238

CPC classification number: H01L21/823462

Abstract: A semiconductor device fabricating method is described. The semiconductor device fabricating method includes providing a substrate. A first gate insulating layer and a second gate insulating layer are formed on the substrate, respectively. A gate layer is blanketly formed. A portion of the gate layer, the first gate insulating layer and the second gate insulating layer are removed to form a first gate, a remaining first gate insulating layer, a second gate and a remaining second gate insulating layer. The remaining first gate insulating layer not covered by the first gate has a first thickness, and the remaining second gate insulating layer not covered by the second gate has a second thickness, wherein a ratio between the first thickness and the second thickness is about 10 to 20. A pair of first spacers and a pair of second spacers are formed on sidewalls of the first gate and the second gate, respectively.

Abstract translation: 描述半导体器件制造方法。 半导体器件制造方法包括提供衬底。 分别在基板上形成第一栅极绝缘层和第二栅极绝缘层。 门层完全形成。 去除栅极层，第一栅极绝缘层和第二栅极绝缘层的一部分以形成第一栅极，剩余的第一栅极绝缘层，第二栅极和剩余的第二栅极绝缘层。 未被第一栅极覆盖的剩余的第一栅极绝缘层具有第一厚度，并且未被第二栅极覆盖的剩余的第二栅极绝缘层具有第二厚度，其中第一厚度和第二厚度之间的比率为约10度 分别在第一栅极和第二栅极的侧壁上形成一对第一间隔物和一对第二间隔物。