公开(公告)号：US07132024B2

公开(公告)日：2006-11-07

申请号：US10386290

申请日：2003-03-11

申请人： Ching Tang Wang ,  Mong-Ching Lin ,  Chung Chih Feng ,  Kuo Kuang Cheng ,  Sheng Lien Chung ,  Pai Hsiang Wu ,  Chiao Fa Yang ,  Chun Hsien Li

发明人： Ching Tang Wang ,  Mong-Ching Lin ,  Chung Chih Feng ,  Kuo Kuang Cheng ,  Sheng Lien Chung ,  Pai Hsiang Wu ,  Chiao Fa Yang ,  Chun Hsien Li

IPC分类号： D04H5/02

CPC分类号： D06N3/0004 ,  D06N3/0097 ,  D06N3/14 ,  D06N3/145 ,  Y10T428/24438 ,  Y10T428/2931 ,  Y10T442/2377 ,  Y10T442/2861 ,  Y10T442/291 ,  Y10T442/3724 ,  Y10T442/3764

摘要： A method for manufacturing an artificial leather comprises the following steps. First, ultramicrofiber-forming fibers having an islands-in-sea type cross-sectional configuration are formed by blend spinning or conjugate spinning. Secondly, a porous reinforcement sheet of low compactness is formed from polyester, polyurethane or polyolefin by spunbonding, meltblowing or calendering. Next, the ultramicrofibers are entangled with the reinforcement sheet by needle punching or spunlace to form the complex reinforced ultramicrofiber nonwoven fabric. The nonwoven is impregnated or coated with an elastomer resin composition, and then subjected to a coagulating process, a washing process, a drying process and a removing process to produce a semi-product leather. Finally, the semi-product leather is then processed to produce the artificial leather.

摘要翻译： 制造人造革的方法包括以下步骤。 首先，通过共混纺丝或共轭纺丝形成具有海岛型横截面构型的超细纤维形成纤维。 其次，通过纺粘，熔喷或压延从聚酯，聚氨酯或聚烯烃形成低密度的多孔增强片。 接下来，通过针刺或水刺将超微纤维与增强片缠结，形成复合增强超微纤维无纺布。 非织造材料用弹性体树脂组合物浸渍或涂覆，然后进行凝固过程，洗涤过程，干燥过程和除去过程以制备半成品皮革。 最后，将半成品皮革加工成人造革。

公开(公告)号：US06962728B2

公开(公告)日：2005-11-08

申请号：US10440437

申请日：2003-05-16

申请人： Hsian Lan Lung ,  Ching Tang Wang

发明人： Hsian Lan Lung ,  Ching Tang Wang

IPC分类号： H01L21/28 ,  H01L21/314 ,  C23C16/30

CPC分类号： H01L21/28282 ,  H01L21/3144

摘要： A method for making a silicon oxide/silicon nitride/silicon oxide structure includes forming a tunnel oxide layer and a silicon nitride layer over a substrate; annealing the silicon nitride layer; forming a silicon oxide layer over the annealed silicon nitride layer by high temperature low pressure chemical vapor deposition; depositing a first gate layer over the silicon oxide layer; patterning to form a silicon oxide/silicon nitride/silicon oxide (ONO) structure; forming bit lines in the substrate adjacent the ONO structure; and annealing to form a thermal oxide over the bit lines.

摘要翻译： 制造氧化硅/氮化硅/氧化硅结构的方法包括在衬底上形成隧道氧化物层和氮化硅层; 退火氮化硅层; 通过高温低压化学气相沉积在退火的氮化硅层上形成氧化硅层; 在所述氧化硅层上沉积第一栅极层; 图案化以形成氧化硅/氮化硅/氧化硅（ONO）结构; 在邻近ONO结构的衬底中形成位线; 并进行退火以在位线上形成热氧化物。