公开(公告)号：US20110163408A1

公开(公告)日：2011-07-07

申请号：US12655698

申请日：2010-01-06

申请人： Chiun-Yen Tung ,  Kun-Hsien Chen ,  Kai-Ying Wang ,  Hung Ta Weng ,  Yi-Chen Shen

发明人： Chiun-Yen Tung ,  Kun-Hsien Chen ,  Kai-Ying Wang ,  Hung Ta Weng ,  Yi-Chen Shen

IPC分类号： H01L29/872 ,  H01L29/06

CPC分类号： H01L29/872 ,  H01L29/0692

摘要： A Schottky diode structure with low reverse leakage current and low forward voltage drop has a first conductive material semiconductor substrate combined with a metal layer. An oxide layer is formed around the edge of the combined conductive material semiconductor substrate and the metal layer. A plurality of dot-shaped or line-shaped second conductive material regions are formed on the surface of the first conductive material semiconductor substrate connecting to the metal layer. The second conductive material regions form depletion regions in the first conductive material semiconductor substrate. The depletion regions can reduce the leakage current area of the Schottky diode, thereby reducing the reverse leakage current and the forward voltage drop. When the first conductive material is a P-type semiconductor, the second conductive material is an N-type semiconductor. When the first conductive material is an N-type semiconductor, the second conductive material is a P-type semiconductor.

摘要翻译： 具有低反向漏电流和低正向压降的肖特基二极管结构具有与金属层组合的第一导电材料半导体衬底。 在组合的导电材料半导体衬底和金属层的边缘周围形成氧化物层。 在与金属层连接的第一导电材料半导体衬底的表面上形成多个点状或线状的第二导电材料区域。 第二导电材料区域在第一导电材料半导体衬底中形成耗尽区。 耗尽区域可以减小肖特基二极管的漏电流面积，从而减少反向漏电流和正向压降。 当第一导电材料是P型半导体时，第二导电材料是N型半导体。 当第一导电材料是N型半导体时，第二导电材料是P型半导体。