公开(公告)号：US20090027216A1

公开(公告)日：2009-01-29

申请号：US11829093

申请日：2007-07-27

申请人： Chung-Chin HUANG ,  Chin-Ying Huang ,  Hsin-Ming Huang ,  Hsing-Hsiung Huang ,  Chung-Sheng Yen ,  Kuan-Chou Lin

发明人： Chung-Chin HUANG ,  Chin-Ying Huang ,  Hsin-Ming Huang ,  Hsing-Hsiung Huang ,  Chung-Sheng Yen ,  Kuan-Chou Lin

IPC分类号： G08B17/117

CPC分类号： G08B21/12 ,  G08B21/182 ,  G08B23/00

摘要： The oxygen sensing device contains a power circuit supplying the electricity required, an oxygen sensor for detecting the oxygen concentration in the atmosphere, an alarm system issuing an audible or visual alarm signal, and a controller. The controller is a computing device having a preset threshold value that continuously obtains the current oxygen concentration from the oxygen sensor. The controller then can calculate and obtain the variation rate of the oxygen concentration in a unit time. If the controller detects that the current oxygen concentration is about to drop below the threshold value, it will activate the alarm system to issue an alarm to alert people to take immediate and proper action.

摘要翻译： 氧传感装置包含供电所需的电源电路，用于检测大气中的氧浓度的氧传感器，发出声音或视觉报警信号的报警系统以及控制器。 控制器是具有从氧传感器连续获得当前氧气浓度的预设阈值的计算装置。 然后，控制器可以计算并获得单位时间内氧气浓度的变化率。 如果控制器检测到当前氧气浓度将低于阈值，它将激活报警系统发出警报，提醒人们立即采取适当行动。

公开(公告)号：US20120181532A1

公开(公告)日：2012-07-19

申请号：US13101983

申请日：2011-05-05

申请人： Chin-Wen LIN ,  Chuan-I HUANG ,  Chung-Chin HUANG ,  Ted Hong SHINN

发明人： Chin-Wen LIN ,  Chuan-I HUANG ,  Chung-Chin HUANG ,  Ted Hong SHINN

IPC分类号： H01L29/786 ,  H01L21/36

CPC分类号： H01L23/3192 ,  H01L23/3171 ,  H01L29/78603 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal oxide semiconductor structure and a production method thereof, the structure including: a substrate; a gate electrode, deposited on the substrate; a gate insulation layer, deposited over the gate electrode and the substrate; an IGZO layer, deposited on the gate insulation layer and functioning as a channel; a source electrode, deposited on the gate insulation layer and being at one side of the IGZO layer; a drain electrode, deposited on the gate insulation layer and being at another side of the IGZO layer; a first passivation layer, deposited over the source electrode, the IGZO layer, and the drain electrode; a second passivation layer, deposited over the first passivation layer; and an opaque resin layer, deposited over the source electrode, the second passivation layer, and the drain electrode.

摘要翻译： 一种金属氧化物半导体结构及其制造方法，其结构包括：基板; 沉积在基板上的栅电极; 栅极绝缘层，沉积在栅电极和衬底上; IGZO层，沉积在栅极绝缘层上并用作沟道; 源电极，淀积在栅极绝缘层上并位于IGZO层的一侧; 漏电极，沉积在栅极绝缘层上并位于IGZO层的另一侧; 沉积在源电极，IGZO层和漏极上的第一钝化层; 沉积在所述第一钝化层上的第二钝化层; 以及沉积在源电极，第二钝化层和漏电极上的不透明树脂层。