公开(公告)号：US11152578B2

公开(公告)日：2021-10-19

申请号：US16765816

申请日：2018-11-13

Applicant: Clap Co., Ltd.

Inventor： Hitoshi Yamato ,  Takuya Tsuda ,  Iori Doi ,  Fabien Nekelson

IPC: H01L51/00 ,  C07D495/04 ,  H01L51/05

Abstract: The present invention provides a process for manufacturing an electronic device comprising a semiconducting layer, which process comprises i) a step of applying a composition comprising at least a compound of formulae (1A)-(1B)-(1C) on a precursor of the electronic device in order to form a layer, and ii) a step of treating the layer of step i) with light in order to form a semiconducting layer, we well as a compound of formula 1A, 1B or 1C, compositions comprising at least one compound of formula 1A, 1B or 1C, and the use of at least one compound of formula 1A, 1B or 1C as photocleavable precursor for organic semiconducting materials.