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1.发明申请METHOD OF ALIGNING DEPOSITED NANOTUBES ONTO AN ETCHED FEATURE USING A SPACER 有权使用间隔器将沉积的纳米管对准蚀刻特征的方法公开(公告)号：US20090243102A1
公开(公告)日：2009-10-01
申请号：US12475013
申请日：2009-05-29
申请人： Colin D. Yates , Christopher L. Neville , Thomas Rueckes , Steven L. Konsek , Mitchell Meinhold , Claude L. Bertin
发明人： Colin D. Yates , Christopher L. Neville , Thomas Rueckes , Steven L. Konsek , Mitchell Meinhold , Claude L. Bertin
CPC分类号： H01L21/76838 , H01L23/53276 , H01L2924/0002 , H01L2924/00
摘要： A method of forming an aligned connection between a nanotube layer and a raised feature is disclosed. A substrate having a raised feature has spacers formed next to the side of the raised feature. The spacers are etched until the sidewalls of the raised feature are exposed forming a notched feature at the top of the spacers. A patterned nanotube layer is formed such that the nanotube layer overlies the top of the spacer and contacts a side portion of the raised feature in the notched feature. The nanotube layer is then covered with an insulating layer. Then a top portion of the insulating layer is removed to expose a top portion of the etched feature.
摘要翻译： 公开了一种在纳米管层和凸起特征之间形成对准连接的方法。 具有凸起特征的基底具有靠近凸起特征侧面的间隔物。 蚀刻间隔物，直到突起特征的侧壁露出，在间隔物的顶部形成切口的特征。 形成图案化的纳米管层，使得纳米管层覆盖在间隔物的顶部并与凹口特征中的凸起特征的侧部接触。 然后用绝缘层覆盖纳米管层。 然后去除绝缘层的顶部以露出蚀刻特征的顶部。
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2.发明授权Method of aligning deposited nanotubes onto an etched feature using a spacer 有权使用间隔物将沉积的纳米管对准蚀刻特征的方法公开(公告)号：US07858979B2
公开(公告)日：2010-12-28
申请号：US12475013
申请日：2009-05-29
申请人： Colin D. Yates , Christopher L. Neville , Thomas Rueckes , Steven L. Konsek , Mitchell Meinhold , Claude L. Bertin
发明人： Colin D. Yates , Christopher L. Neville , Thomas Rueckes , Steven L. Konsek , Mitchell Meinhold , Claude L. Bertin
CPC分类号： H01L21/76838 , H01L23/53276 , H01L2924/0002 , H01L2924/00
摘要： A method of forming an aligned connection between a nanotube layer and a raised feature is disclosed. A substrate having a raised feature has spacers formed next to the side of the raised feature. The spacers are etched until the sidewalls of the raised feature are exposed forming a notched feature at the top of the spacers. A patterned nanotube layer is formed such that the nanotube layer overlies the top of the spacer and contacts a side portion of the raised feature in the notched feature. The nanotube layer is then covered with an insulating layer. Then a top portion of the insulating layer is removed to expose a top portion of the etched feature.
摘要翻译： 公开了一种在纳米管层和凸起特征之间形成对准连接的方法。 具有凸起特征的基底具有靠近凸起特征侧面的间隔物。 蚀刻间隔物，直到突起特征的侧壁露出，在间隔物的顶部形成切口的特征。 形成图案化的纳米管层，使得纳米管层覆盖在间隔物的顶部并与凹口特征中的凸起特征的侧部接触。 然后用绝缘层覆盖纳米管层。 然后去除绝缘层的顶部以露出蚀刻特征的顶部。
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3.发明授权Method of aligning deposited nanotubes onto an etched feature using a spacer 有权使用间隔物将沉积的纳米管对准蚀刻特征的方法公开(公告)号：US07541216B2
公开(公告)日：2009-06-02
申请号：US11304871
申请日：2005-12-14
IPC分类号： H01L51/40
CPC分类号： H01L21/76838 , H01L23/53276 , H01L2924/0002 , H01L2924/00
摘要： A method of forming an aligned connection between a nanotube layer and a raised feature is disclosed. A substrate having a raised feature has spacers formed next to the side of the raised feature. The spacers are etched until the sidewalls of the raised feature are exposed forming a notched feature at the top of the spacers. A patterned nanotube layer is formed such that the nanotube layer overlies the top of the spacer and contacts a side portion of the raised feature in the notched feature. The nanotube layer is then covered with an insulating layer. Then a top portion of the insulating layer is removed to expose a top portion of the etched feature.
摘要翻译： 公开了一种在纳米管层和凸起特征之间形成对准连接的方法。 具有凸起特征的基底具有靠近凸起特征侧面的间隔物。 蚀刻间隔物，直到突起特征的侧壁露出，在间隔物的顶部形成切口的特征。 形成图案化的纳米管层，使得纳米管层覆盖在间隔物的顶部并与凹口特征中的凸起特征的侧部接触。 然后用绝缘层覆盖纳米管层。 然后去除绝缘层的顶部以露出蚀刻特征的顶部。
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