公开(公告)号：US4264385A

公开(公告)日：1981-04-28

申请号：US622464

申请日：1975-10-15

申请人： Colin Fisher

发明人： Colin Fisher

IPC分类号： C30B15/10 ,  C30B15/24 ,  C30B27/02 ,  C30B15/28

CPC分类号： C30B15/10 ,  C30B15/24 ,  C30B27/02 ,  Y10S117/90

摘要： Methods of growing crystals by the Czochralski method are provided in which a member having a central vertical passageway extending through it is floated on the melt, and the crystallization is caused to take place within this passageway. The passageway may be parallel sided or tapering from top to bottom and is such that the melt does not wet the walls of the passageway. Excellent diameter control of the grown crystal is obtainable, and since the member floats on the melt during crystallization, its position follows changes in the level of the melt as the material is pulled from the melt. In one embodiment, the member is porous and fluid is forced through the porous wall of the passageway from a cavity within the member to form a barrier to keep the melt out of contact with the wall of the passageway. In another embodiment, a liquid encapsulant is used, which forms a coating over the whole surface of the floating member including the wall of the passageway. The floating member can be made from a number of different materials, including graphite, silicon nitride, silicon carbide, boron nitride, silica and Beryllia. The crystal may be rotated as pulled, in which case a centering device may be provided to maintain the axis of the passageway coincident with the axis of rotation of the crystal.

摘要翻译： 提供了通过切克劳斯基法生长晶体的方法，其中具有延伸通过其的中心垂直通道的构件浮在熔体上，并且在该通道内发生结晶。 该通道可以是从顶部到底部平行的或逐渐变细的并且使得熔体不会使通道的壁变湿。 可以获得生长晶体的良好的直径控制，并且由于构件在结晶期间漂浮在熔体上，所以其位置随着材料从熔体中拉出而随着熔体水平的变化而变化。 在一个实施例中，构件是多孔的并且流体被迫从构件中的空腔穿过通道的多孔壁以形成阻挡层，以保持熔体不与通道的壁接触。 在另一个实施例中，使用液体密封剂，其在包括通道的壁的浮动构件的整个表面上形成涂层。 浮动构件可以由许多不同的材料制成，包括石墨，氮化硅，碳化硅，氮化硼，二氧化硅和Beryllia。 晶体可以被拉动旋转，在这种情况下，可以设置定心装置以保持通道的轴线与晶体的旋转轴线一致。

公开(公告)号：US4167554A

公开(公告)日：1979-09-11

申请号：US800866

申请日：1977-05-26

申请人： Colin Fisher

发明人： Colin Fisher

IPC分类号： C30B15/24 ,  B01J17/18

CPC分类号： C30B15/24 ,  Y10S117/90 ,  Y10S117/911 ,  Y10T117/1036 ,  Y10T117/1072

摘要： Methods of growing crystals by the Czochralski method in which a member having a central vertical passageway extending through it is floated on the melt, and the crystallization is caused to take place within this passageway. The passageway may be parallel sided or tapering from top to bottom and is such that the melt does not wet the walls of the passageway. Excellent diameter control of the grown crystal is obtainable, and since the member floats on the melt during crystallisation, its position follows changes in the level of the melt as the material is pulled from the melt. In one embodiment, the member is porous and fluid is forced through the porous wall of the passageway from a cavity within the member to form a barrier to keep the melt out of contact with the wall of the passageway. In another embodiment, a liquid encapsulant is used, which forms a coating over the whole surface of the floating member including the wall of the passageway. The floating member can be made from a number of different materials, including graphite, silicon nitride, silicon carbide, boron nitride, silica beryllia. The crystal may be rotated as pulled, in which case a centering device may be provided to maintain the axis of the passageway coincident with the axis of rotation of the crystal.

摘要翻译： 通过切克劳斯基法生长晶体的方法，其中具有延伸穿过其的中心垂直通道的构件浮在熔体上，并且使该结晶发生在该通道内。 该通道可以是从顶部到底部平行的或逐渐变细的并且使得熔体不会使通道的壁变湿。 可以获得生长晶体的良好的直径控制，并且由于构件在结晶期间漂浮在熔体上，所以其位置随着材料从熔体中拉出而随着熔体水平的变化而变化。 在一个实施例中，构件是多孔的并且流体被迫从构件中的空腔穿过通道的多孔壁以形成阻挡层，以保持熔体不与通道的壁接触。 在另一个实施例中，使用液体密封剂，其在包括通道的壁的浮动构件的整个表面上形成涂层。 浮动构件可以由许多不同的材料制成，包括石墨，氮化硅，碳化硅，氮化硼，二氧化硅铍。 晶体可以被拉动旋转，在这种情况下，可以设置定心装置以保持通道的轴线与晶体的旋转轴线重合。