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1.发明申请公开(公告)号：US20170292205A1
公开(公告)日：2017-10-12
申请号：US15507851
申请日：2015-09-09
发明人： Naoki MASUDA , Masahiko URANO
摘要： A single crystal pulling apparatus including: a remelting detection apparatus which detects that remelting of a lower end portion of the semiconductor single crystal is completed from a change in weight of the semiconductor single crystal when the lower end portion of the semiconductor single crystal is immersed in the melt to be remolten by using the wire; and a lowermost end detection apparatus which detects a lowermost end of the semiconductor single crystal from a position where no current flows between the semiconductor single crystal and the melt when the semiconductor single crystal is taken up with the use of the wire while applying a voltage between the semiconductor single crystal and the melt by applying a voltage between the crucible and the wire.
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公开(公告)号：US20160153117A1
公开(公告)日：2016-06-02
申请号：US14900426
申请日：2014-06-20
发明人： Guojian Wang , Dongming Mei
摘要： In accordance with the present invention, taught is a high purity germanium crystal growth method utilizing a quartz shield inside a steel furnace. The quartz shield is adapted for not only guiding the flow of an inert gas but also preventing the germanium melt from contamination by insulation materials, graphite crucible, induction coil and stainless steel chamber. A load cell provides automatic control of crystal diameter and helps to ensure exhaustion of the germanium melt. The method is both convenient and effective at producing high purity germanium crystals by relatively low skilled operators.
摘要翻译： 根据本发明，教导了在钢炉内使用石英屏蔽的高纯度锗晶体生长方法。 石英屏蔽适用于不仅引导惰性气体的流动，而且还防止锗熔体受绝缘材料，石墨坩埚，感应线圈和不锈钢室的污染。 称重传感器可自动控制晶体直径，有助于确保锗熔体的耗尽。 该方法既方便又有效地通过相对低的熟练操作者生产高纯锗晶体。
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公开(公告)号：US20100263585A1
公开(公告)日：2010-10-21
申请号：US12732492
申请日：2010-07-01
申请人： Ken Hamada
发明人： Ken Hamada
IPC分类号： C30B15/28
CPC分类号： C30B15/26 , C30B15/28 , Y10T117/1004 , Y10T117/1012
摘要： When pulling and growing a single crystal from a raw material melt by the Czochralski method, a boundary between the single crystal and the raw material melt is imaged by an optical sensor, and also the weight of the single crystal is measured by a weight sensor, a diameter value of the single crystal is calculated on the basis of first measured values of the diameter of the single crystal derived from image data captured by the optical sensor and second measured values of the diameter of the single crystal derived from weight data captured by the weight sensor, and a pulling rate of the single crystal and the temperature of the raw material melt are adjusted on the basis of the calculated diameter value to thereby control the diameter of the single crystal, and thus it is possible to accurately measure the diameter of a growing single crystal.
摘要翻译： 当通过Czochralski法从原料熔体中拉出和生长单晶时，通过光学传感器对单晶和原料熔体之间的边界进行成像，并且通过重量传感器测量单晶的重量， 基于由光学传感器捕获的图像数据导出的单晶直径的第一测量值和从由该光学传感器捕获的重量数据导出的单晶直径的第二测量值，计算单晶的直径值 基于计算出的直径值来调节单体的重量传感器和单晶的拉出速度和原料熔融温度，从而控制单晶的直径，从而可以精确地测量单晶的直径 增长单晶。
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4.发明授权Method and apparatus for melt level detection in czochralski crystal growth systems 失效在切克劳斯基晶体生长系统中的熔体水平检测方法和装置
公开(公告)号：US5286461A
公开(公告)日：1994-02-15
申请号：US762755
申请日：1991-09-20
IPC分类号： C30B15/26 , H01L21/208 , C30B15/28
CPC分类号： C30B15/26 , Y10T117/1004 , Y10T117/1012
摘要： The present invention is directed toward a melt level detection system for detecting the level of the melt surface in crystal growing systems that utilize a crucible containing a pool of melt from which a seed is withdrawn to grow the crystal. The detection system utilizes a light source for directing a light beam at the melt, and a light detection apparatus positioned on the other side of the melt for receiving the beam of light that is reflected off of the melt. The detection system utilizes a single element linear detector that provides output signals relating to whether the light beam is illuminating the detector, and where on the detector the illumination occurs. A computer system is utilized to implement an algorithm that processes the output signals from the detector which are continually sampled over time. The algorithm disregards the location data sent from the detector if it determines that the light beam was not incident on the detector for a given sample. By analyzing location data only for samples generated when the light beam was incident on the detector, the algorithm determines an average location of the melt level for a predetermined number of samples and assumes that this average is representative of the location of the actual melt level.
摘要翻译： 本发明涉及一种用于检测晶体生长系统中的熔体表面的水平的熔体水平检测系统，该结晶生长系统利用含有一种熔融物池的坩埚，该坩埚池从晶团中取出种子以生长晶体。 检测系统利用光源来引导熔体处的光束，以及位于熔体另一侧的光检测装置，用于接收从熔体反射的光束。 检测系统利用单元线性检测器，其提供与光束是否照射检测器有关的输出信号，以及在检测器上在哪里发生照明。 使用计算机系统来实现一种处理来自检测器的输出信号的算法，其随时间连续地采样。 如果确定给定样品的光束未入射到检测器上，算法将忽略从检测器发送的位置数据。 通过分析仅当光束入射到检测器上时产生的样品的位置数据，该算法确定了预定数量样品的熔体水平的平均位置，并假设该平均值代表实际熔体水平的位置。
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5.发明授权
公开(公告)号：US5074953A
公开(公告)日：1991-12-24
申请号：US395724
申请日：1989-08-18
申请人： Keiji Shirata , Koichi Sassa , Kenji Tomizawa
发明人： Keiji Shirata , Koichi Sassa , Kenji Tomizawa
CPC分类号： C30B15/28 , C30B29/40 , Y10S117/907 , Y10T117/1008 , Y10T117/1064
摘要： The present invention relates to a method and apparatus for mono-crystalline growth of a dissociative compound semiconductor. The method, which is based on the Czochralski method, includes the following steps. First, a first volatile component material and second material of the dissociative compound semiconductor are prepared. The first material is placed on the bottom of an inner air-tight vessel which is contained in an outer air-tight vessel. The second material is contained in a crucible supported in the inner vessel by a lower shaft extending from the inside to the outside of the inner vessel. The first material is, next, heated for evaporating so as to react with the second material. Therefore, the dissociative compound semiconductor is synthesized in the crucible. Then, temperature of a furnace installed on the inner vessel is adjusted so that the pressure of the gas of the first volatile component material in the inner vessel is controlled. A single crystal is pulled up from the melt by an upper shaft extending from inside to outside of the inner vessel, thereby the single crystal is grown. The improvement is that the pulling-up step includes the steps of: measuring the weight of the growing crystal, the weight influenced by a difference between the interior pressure of the inner vessel and a pressure outside of the inner vessel; correcting the measured weight of the crystal for the error due to the pressure difference, thereby obtaining an accurate estimate of the weight of the crystal; and controlling a diameter of the growing crystal on the basis of the weight estimate of the crystal.
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公开(公告)号：US4264385A
公开(公告)日：1981-04-28
申请号：US622464
申请日：1975-10-15
申请人： Colin Fisher
发明人： Colin Fisher
CPC分类号： C30B15/10 , C30B15/24 , C30B27/02 , Y10S117/90
摘要： Methods of growing crystals by the Czochralski method are provided in which a member having a central vertical passageway extending through it is floated on the melt, and the crystallization is caused to take place within this passageway. The passageway may be parallel sided or tapering from top to bottom and is such that the melt does not wet the walls of the passageway. Excellent diameter control of the grown crystal is obtainable, and since the member floats on the melt during crystallization, its position follows changes in the level of the melt as the material is pulled from the melt. In one embodiment, the member is porous and fluid is forced through the porous wall of the passageway from a cavity within the member to form a barrier to keep the melt out of contact with the wall of the passageway. In another embodiment, a liquid encapsulant is used, which forms a coating over the whole surface of the floating member including the wall of the passageway. The floating member can be made from a number of different materials, including graphite, silicon nitride, silicon carbide, boron nitride, silica and Beryllia. The crystal may be rotated as pulled, in which case a centering device may be provided to maintain the axis of the passageway coincident with the axis of rotation of the crystal.
摘要翻译： 提供了通过切克劳斯基法生长晶体的方法，其中具有延伸通过其的中心垂直通道的构件浮在熔体上，并且在该通道内发生结晶。 该通道可以是从顶部到底部平行的或逐渐变细的并且使得熔体不会使通道的壁变湿。 可以获得生长晶体的良好的直径控制，并且由于构件在结晶期间漂浮在熔体上，所以其位置随着材料从熔体中拉出而随着熔体水平的变化而变化。 在一个实施例中，构件是多孔的并且流体被迫从构件中的空腔穿过通道的多孔壁以形成阻挡层，以保持熔体不与通道的壁接触。 在另一个实施例中，使用液体密封剂，其在包括通道的壁的浮动构件的整个表面上形成涂层。 浮动构件可以由许多不同的材料制成，包括石墨，氮化硅，碳化硅，氮化硼，二氧化硅和Beryllia。 晶体可以被拉动旋转，在这种情况下，可以设置定心装置以保持通道的轴线与晶体的旋转轴线一致。
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7.发明授权Weighing cell apparatus for diameter control of a rotatable growing crystal 失效用于可旋转生长晶体的直径控制的称重电池装置
公开(公告)号：US3934983A
公开(公告)日：1976-01-27
申请号：US395172
申请日：1973-09-07
CPC分类号： C30B15/22 , C30B15/28 , C30B15/30 , Y10S117/911 , Y10T117/1008 , Y10T117/1072
摘要： Apparatus for the closed-loop controlled growth of crystalline material by the Czochralski technique includes means for establishing a melt of a given crystallisable material, means for pulling a crystal from said melt when established, said means for pulling incorporating a rigid elongated pulling member defining a crystal pulling axis, means for rotating said pulling member about said crystal pulling axis and a weighing cell located at the end of said pulling member distant from said means for establishing a melt and capable of providing, for the purpose of closed-loop control of said crystal pulled, a signal related to the force along said crystal pulling axis on the pulling member.The weighing cell is preferably one of the kind having a spring and a transducer arranged to produce an electrical output related to the tension of the spring. The pulling member is preferably freely suspended from the weighing cell by a coupling which allows the pulling member to be rotated without rotating the weighing cell.
摘要翻译： 用于通过切克劳斯基（Czochralski）技术对结晶材料进行闭环控制生长的装置包括用于建立给定的可结晶材料的熔体的装置，用于在建立时从所述熔体中拉出晶体的装置，所述用于拉动的装置包括限定一个 晶体牵引轴，用于围绕所述晶体牵引轴线旋转所述牵引构件的装置和位于所述牵引构件的远离所述用于建立熔体的装置的端部处的称重单元，并且能够提供用于闭环控制所述 晶体拉出与牵引构件上沿着晶体牵引轴线的力相关的信号。
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公开(公告)号：US20230332326A1
公开(公告)日：2023-10-19
申请号：US18028815
申请日：2021-09-03
发明人： Jin Sung PARK , Kyung Seok LEE , Young Jun LEE , Keun Ho KIM
CPC分类号： C30B15/20 , C30B29/06 , C30B15/002 , C30B15/28
摘要： Disclosed is an ingot growing apparatus. The ingot growing apparatus according to the embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon to grow an ingot, a preliminary crucible which receives a solid silicon material, melts the solid silicon material, and supplies molten silicon to the main crucible, a measurement unit which is installed to pass through the growth furnace and measures a change in level of the surface of the molten silicon in the main crucible, and a control unit which controls supply of the molten silicon in the preliminary crucible to the main crucible on the basis of the measured change in the level of the surface of the molten silicon.
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公开(公告)号：US20100116194A1
公开(公告)日：2010-05-13
申请号：US12524737
申请日：2008-01-23
申请人： Shinji Togawa , Ryosuke Ueda
发明人： Shinji Togawa , Ryosuke Ueda
IPC分类号： C30B15/28 , C01B33/021 , C30B15/22
CPC分类号： C30B29/06 , C30B13/285 , C30B13/32 , C30B15/22
摘要： Provided is a silicon crystalline material, which is manufactured by a CZ method to be used as a material bar for manufacturing a silicon single crystal by an FZ method and has a grasping section for being loaded in a crystal growing furnace employing the FZ method without requiring mechanical processing. A method for manufacturing such silicon crystalline material is also provided. The silicon crystalline material is manufactured by the silicon crystal manufacturing method employing the CZ method and is provided with the grasping section, which is manufactured in a similar way as a shoulder portion, a straight body portion and a tail portion in a silicon crystal growing step employing the CZ method, and is loaded in a single crystal manufacturing apparatus employing the FZ method to grow single crystals. A seed-crystal used in the silicon crystal manufacture employing the CZ method is used as the grasping section. The grasping section is manufactured by temporarily changing crystal growing conditions to form a protruding section or a recessed section on the outer circumference surface of the straight body section or by forming a dent on the shoulder portion of the straight body portion, at the time of manufacturing the silicon crystal by the CZ method.
摘要翻译： 提供了一种硅晶体材料，其通过CZ法制造，用作通过FZ法制造单晶硅材料棒，并且具有用FZ方法装载在晶体生长炉中的把持部分，而不需要 机械加工。 还提供了制造这种硅晶体材料的方法。 硅晶体材料通过使用CZ法的硅晶体制造方法制造，并且在硅晶体生长步骤中设置有与肩部相同的方式制造的把持部，直体部和尾部 采用CZ法，并装载在采用FZ法的单晶制造装置中生长单晶。 使用采用CZ法的硅晶体制造中使用的晶种被用作抓取部分。 通过临时改变晶体生长条件来制造把持部分，以在直体部分的外圆周表面上形成突出部分或凹部，或者在制造时在直体部分的肩部上形成凹痕 硅晶体采用CZ法。
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公开(公告)号：US5879451A
公开(公告)日：1999-03-09
申请号：US763890
申请日：1996-12-11
申请人： Kouji Mizuishi
发明人： Kouji Mizuishi
CPC分类号： C30B15/28 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032
摘要： An apparatus for measuring the weight of a crystal in a cable-type crystal pulling apparatus. A cable winding mechanism of the crystal pulling apparatus includes a guide pulley which is supported by a load plate and which changes the direction of the cable by 180 degrees, and a winding drum 8 which is disposed on a base plate and onto which the cable is wound. The load plate, on which a load due to pulling acts, is supported by a plurality of small-load load cells so that the load is equally distributed to the small-load load cells. Thus, the weight measuring apparatus can have a simple and low-cost structure, and the accuracy of measurement can be improved.
摘要翻译： 一种用于测量电缆型拉晶装置中的晶体重量的装置。 晶体牵引装置的电缆缠绕机构包括由负载板支撑并将电缆的方向改变180度的引导滑轮和设置在基板上的卷绕鼓8，电缆线 伤口。 由于牵引作用而产生的负载的负载板由多个小负载称重传感器支撑，使得负载被均等地分配给小负载传感器。 因此，重量测量装置可以具有简单且低成本的结构，并且可以提高测量的精度。
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